SBAS789B October 2017 – April 2020 AMC1106E05 , AMC1106M05
PRODUCTION DATA.
The AMC1106 is a precision, delta-sigma (ΔΣ) modulator with the output separated from the input circuitry by a capacitive isolation barrier that is highly resistant to magnetic interference.
The input stage of the AMC1106 is optimized for direct connection to shunt resistors or other low voltage-level signal sources commonly used in multi-phase electricity meters to achieve excellent ac and dc performance. The device low input voltage range of ±50-mV allows use of small shunt resistor values to minimize power dissipation. Decimate the output bitstream of the AMC1106 with an appropriate digital filter. The MSP430F67x, TMS320F2807x, and TMS320F2837x microcontrollers, and the AMC1210 integrate these digital filters for seamless operation with the AMC1106.
On the high-side, the modulator is supplied by a
3.3-V or 5-V power supply (AVDD). The isolated digital interface operates from a 3.0-V, 3.3-V, or 5-V power supply (DVDD).
The AMC1106 is specified over the extended industrial temperature range of –40°C to +125°C.
PART NUMBER | PACKAGE | BODY SIZE (NOM) |
---|---|---|
AMC1106x | SOIC (8) | 5.85 mm × 7.50 mm |
Changes from A Revision (June 2018) to B Revision
Changes from * Revision (October 2017) to A Revision
PART NUMBER | DIGITAL OUTPUT INTERFACE |
---|---|
AMC1106E05 | Manchester coded CMOS |
AMC1106M05 | Uncoded CMOS |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NO. | NAME | ||
1 | AVDD | — | Analog (high-side) power supply, 3.0 V to 5.5 V.
See the Power Supply Recommendations section for decoupling recommendations. |
2 | AINP | I | Noninverting analog input |
3 | AINN | I | Inverting analog input |
4 | AGND | — | Analog (high-side) ground reference |
5 | DGND | — | Digital (controller-side) ground reference |
6 | DOUT | O | Modulator data output. This pin is a Manchester coded output for the AMC1106E05. |
7 | CLKIN | I | Modulator clock input |
8 | DVDD | — | Digital (controller-side) power supply, 2.7 V to 5.5 V.
See the Power Supply Recommendations section for decoupling recommendations. |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, AVDD to AGND or DVDD to DGND | –0.3 | 6.5 | V | |
Analog input voltage at AINP, AINN | AGND – 6 | AVDD + 0.5 | V | |
Digital output voltage at DOUT, or digital input voltage on CLKIN | DGND – 0.5 | DVDD + 0.5 | V | |
Input current to any pin except supply pins | –10 | 10 | mA | |
Junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | |||
---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V |
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | NOM | MAX | UNIT | ||
---|---|---|---|---|---|
AVDD | Analog (high-side) supply voltage (AVDD to AGND) | 3.0 | 5.0 | 5.5 | V |
DVDD | Digital (controller-side) supply voltage (DVDD to DGND) | 2.7 | 3.3 | 5.5 | V |
TA | Operating ambient temperature | –40 | 125 | °C |
THERMAL METRIC(1) | AMC1106x | UNIT | |
---|---|---|---|
DWV (SOIC) | |||
8 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 112.2 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 47.6 | °C/W |
RθJB | Junction-to-board thermal resistance | 60.0 | °C/W |
ψJT | Junction-to-top characterization parameter | 23.1 | °C/W |
ψJB | Junction-to-board characterization parameter | 60.0 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
PD | Maximum power dissipation
(both sides) |
AMC1106E05, AVDD = DVDD = 5.5 V | 91.85 | mW | ||
AMC1106M05, AVDD = DVDD = 5.5 V | 86.90 | |||||
PD1 | Maximum power dissipation
(high-side supply) |
AVDD = 5.5 V | 53.90 | mW | ||
PD2 | Maximum power dissipation
(low-side supply) |
AMC1106E05, AVDD = DVDD = 5.5 V | 37.95 | mW | ||
AMC1106M05, AVDD = DVDD = 5.5 V | 33.00 |
PARAMETER | TEST CONDITIONS | VALUE | UNIT | |
---|---|---|---|---|
GENERAL | ||||
CLR | External clearance(1) | Shortest pin-to-pin distance through air | ≥ 8.5 | mm |
CPG | External creepage(1) | Shortest pin-to-pin distance across the package surface | ≥ 8.5 | mm |
DTI | Distance through insulation | Minimum internal gap (internal clearance) of the insulation | ≥ 0.021 | mm |
CTI | Comparative tracking index | DIN EN 60112 (VDE 0303-11); IEC 60112 | ≥ 600 | V |
Material group | According to IEC 60664-1 | I | ||
Overvoltage category per IEC 60664-1 | Rated mains voltage ≤ 300 VRMS | I-IV | ||
Rated mains voltage ≤ 600 VRMS | I-IV | |||
DIN VDE V 0884-11: 2017-01(2) | ||||
VIORM | Maximum repetitive peak isolation voltage | At ac voltage (bipolar) | 849 | VPK |
VIOWM | Maximum-rated isolation working voltage | At ac voltage (sine wave) | 600 | VRMS |
At dc voltage | 849 | VDC | ||
VIOTM | Maximum transient isolation voltage | VTEST = VIOTM, t = 60 s (qualification test) | 5657 | VPK |
VTEST = 1.2 × VIOTM, t = 1 s (100% production test) | 6789 | |||
VIOSM | Maximum surge isolation voltage(3) | Test method per IEC 60065, 1.2/50-µs waveform,
VTEST = 1.3 × VIOSM = 7800 VPK (qualification) |
6000 | VPK |
qpd | Apparent charge(4) | Method a, after input/output safety test subgroup 2 / 3,
Vini = VIOTM, tini = 60 s, Vpd(m) = 1.2 × VIORM = 1019 VPK, tm = 10 s |
≤ 5 | pC |
Method a, after environmental tests subgroup 1,
Vini = VIOTM, tini = 60 s, Vpd(m) = 1.3 × VIORM = 1104 VPK, tm = 10 s |
≤ 5 | |||
Method b1, at routine test (100% production) and preconditioning (type test), Vini = VIOTM, tini = 1 s,
Vpd(m) = 1.5 × VIORM = 1274 VPK, tm = 1 s |
≤ 5 | |||
CIO | Barrier capacitance, input to output(5) | VIO = 0.5 VPP at 1 MHz | 1.2 | pF |
RIO | Insulation resistance, input to output(5) | VIO = 500 V at TS = 150°C | > 109 | Ω |
Pollution degree | 2 | |||
Climatic category | 40/125/21 | |||
UL1577 | ||||
VISO | Withstand isolation voltage | VTEST = VISO = 4000 VRMS or 5657 VDC, t = 60 s (qualification), VTEST = 1.2 × VISO = 4800 VRMS, t = 1 s (100% production test) | 4000 | VRMS |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
IS | Safety input, output, or supply current,
see Figure 3 |
RθJA = 112.2°C/W, VDD1 = VDD2 = 5.5 V,
TJ = 150°C, TA = 25°C |
202.5 | mA | ||
RθJA = 112.2°C/W, VDD1 = VDD2 = 3.6 V,
TJ = 150°C, TA = 25°C |
309.4 | |||||
PS | Safety input, output, or total power,
see Figure 4 |
RθJA = 112.2°C/W, TJ = 150°C, TA = 25°C | 1114(1) | mW | ||
TS | Maximum safety temperature | 150 | °C |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
ANALOG INPUTS | ||||||
VClipping | Differential input voltage before clipping output | VIN = AINP – AINN | ±64 | mV | ||
FSR | Specified linear differential full-scale | VIN = AINP – AINN | –50 | 50 | mV | |
Absolute common-mode input voltage(1) | (AINP + AINN) / 2 to AGND | –2 | AVDD | V | ||
VCM | Operating common-mode input voltage | (AINP + AINN) / 2 to AGND | –0.032 | AVDD – 2.1 | V | |
VCMov | Common-mode overvoltage detection level(2) | (AINP + AINN) / 2 to AGND | AVDD – 2 | V | ||
CIN | Single-ended input capacitance | AINN = AGND | 4 | pF | ||
CIND | Differential input capacitance | 2 | pF | |||
IIB | Input bias current | AINP = AINN = AGND, IIB = IIBP + IIBN | –97 | –72 | –57 | µA |
RIN | Single-ended input resistance | AINN = AGND | 4.75 | kΩ | ||
RIND | Differential input resistance | 4.9 | kΩ | |||
IIO | Input offset current | ±10 | nA | |||
CMTI | Common-mode transient immunity | 15 | kV/µs | |||
CMRR | Common-mode rejection ratio | AINP = AINN, fIN = 0 Hz,
VCM min ≤ VIN ≤ VCM max |
–99 | dB | ||
AINP = AINN, fIN from 0.1 Hz to 50 kHz,
VCM min ≤ VIN ≤ VCM max |
–98 | |||||
BW | Input bandwidth(3) | 800 | kHz | |||
DC ACCURACY | ||||||
DNL | Differential nonlinearity | Resolution: 16 bits | –0.99 | 0.99 | LSB | |
INL | Integral nonlinearity(4) | Resolution: 16 bits, 4.5 V ≤ AVDD ≤ 5.5 V | –4 | ±1 | 4 | LSB |
Resolution: 16 bits, 3.0 V ≤ AVDD ≤ 3.6 V | –5 | ±1.5 | 5 | |||
EO | Offset error | Initial, at 25°C, AINP = AINN = AGND | –50 | ±2.5 | 50 | µV |
TCEO | Offset error thermal drift(5) | –1 | ±0.25 | 1 | μV/°C | |
EG | Gain error | Initial, at 25°C | –0.2% | ±0.005% | 0.2% | |
TCEG | Gain error thermal drift(6) | –40 | ±20 | 40 | ppm/°C | |
PSRR | Power-supply rejection ratio | AINP = AINN = AGND,
3.0 V ≤ AVDD ≤ 5.5 V, at dc |
–108 | dB | ||
AINP = AINN = AGND,
3.0 V ≤ AVDD ≤ 5.5 V, 10 kHz, 100-mV ripple |
–107 | |||||
AC ACCURACY | ||||||
SNR | Signal-to-noise ratio | fIN = 1 kHz | 78 | 82.5 | dB | |
SINAD | Signal-to-noise + distortion | fIN = 1 kHz | 77.5 | 82.3 | dB | |
THD | Total harmonic distortion | 4.5 V ≤ AVDD ≤ 5.5 V,
5 MHz ≤ fCLKIN ≤ 21 MHz, fIN = 1 kHz |
–98 | –84 | dB | |
3.0 V ≤ AVDD ≤ 3.6 V,
5 MHz ≤ fCLKIN ≤ 20 MHz, fIN = 1 kHz |
–93 | –83 | ||||
SFDR | Spurious-free dynamic range | fIN = 1 kHz | 83 | 100 | dB | |
DIGITAL INPUTS/OUTPUTS (CMOS Logic With Schmitt-Trigger) | ||||||
IIN | Input current | DGND ≤ VCLKIN ≤ DVDD | 0 | 7 | µA | |
CIN | Input capacitance | 4 | pF | |||
VIH | High-level input voltage | 0.7 × DVDD | DVDD + 0.3 | V | ||
VIL | Low-level input voltage | –0.3 | 0.3 × DVDD | V | ||
VOH | High-level output voltage | IOH = –20 µA | DVDD – 0.1 | V | ||
IOH = –4 mA | DVDD – 0.4 | |||||
VOL | Low-level output voltage | IOL = 20 µA | 0.1 | V | ||
IOL = 4 mA | 0.4 | |||||
CLOAD | Output load capacitance | 30 | pF | |||
POWER SUPPLY | ||||||
IAVDD | High-side supply current | 3.0 V ≤ AVDD ≤ 3.6 V | 6.3 | 8.5 | mA | |
4.5 V ≤ AVDD ≤ 5.5 V | 7.2 | 9.8 | ||||
IDVDD | Controller-side supply current | AMC1106E05, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF |
4.1 | 5.5 | mA | |
AMC1106M05, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF |
3.3 | 4.8 | ||||
AMC1106E05, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF |
5.0 | 6.9 | ||||
AMC1106M05, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF |
3.9 | 6.0 |
MIN | NOM | MAX | UNIT | |||
---|---|---|---|---|---|---|
fCLKIN | CLKIN clock frequency | 4.5 V ≤ AVDD ≤ 5.5 V | 5 | 21 | MHz | |
3.0 V ≤ AVDD ≤ 5.5 V | 5 | 20 | ||||
tCLKIN | CLKIN clock period,
see Figure 1 |
4.5 V ≤ AVDD ≤ 5.5 V | 47.6 | 200 | ns | |
3.0 V ≤ AVDD ≤ 5.5 V | 50 | 200 | ||||
tHIGH | CLKIN clock high time, see Figure 1 | 20 | 25 | 120 | ns | |
tLOW | CLKIN clock low time, see Figure 1 | 20 | 25 | 120 | ns |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | |
---|---|---|---|---|---|---|
tH | DOUT hold time after rising edge
of CLKIN, see Figure 1 |
AMC1106M05(1), CLOAD = 15 pF | 3.5 | ns | ||
tD | Rising edge of CLKIN to DOUT valid delay, see Figure 1 | AMC1106M05(1), CLOAD = 15 pF | 15 | ns | ||
tr | DOUT rise time, see Figure 1 | 10% to 90%, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF |
0.8 | 3.5 | ns | |
10% to 90%, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF |
1.8 | 3.9 | ||||
tf | DOUT fall time, see Figure 1 | 90% to 10%, 2.7 V ≤ DVDD ≤ 3.6 V,
CLOAD = 15 pF |
0.8 | 3.5 | ns | |
90% to 10%, 4.5 V ≤ DVDD ≤ 5.5 V,
CLOAD = 15 pF |
1.8 | 3.9 | ||||
tISTART | Interface startup time,
see Figure 2 |
DVDD at 2.7 V (min) to DOUT valid with AVDD ≥ 3.0 V | 32 | 32 | tCLKIN | |
tASTART | Analog startup time,
see Figure 2 |
AVDD step to 3.0 V with DVDD ≥ 2.7 V, 0.1% settling | 0.5 | ms |