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  • CSD15380F3 20-V N-Channel FemtoFET MOSFET

    • SLPS579B May   2016  – February 2022 CSD15380F3

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  • CSD15380F3 20-V N-Channel FemtoFET MOSFET
  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Trademarks
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Mechanical Dimensions
    2. 7.2 Recommended Minimum PCB Layout
    3. 7.3 Recommended Stencil Pattern
  8. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • YJM|3
    • MXLG032A
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • slps579b_oa
  • slps579b_pm
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    • Full reading width
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DATA SHEET

CSD15380F3 20-V N-Channel FemtoFET MOSFET

1 Features

  • Ultra-low CiSS and COSS
  • Ultra-low Qg and Qgd
  • Ultra-small footprint
    • 0.73 mm × 0.64 mm
  • Ultra-low profile
    • 0.36-mm max height
  • Integrated ESD protection diode
    • Rated > 4-kV HBM
    • Rated > 2-kV CDM
  • Lead and halogen free
  • RoHS compliant

2 Applications

  • Optimized for load switch applications
  • Optimized for general purpose switching applications
  • Battery applications
  • Handheld and mobile applications

3 Description

This 20-V, 990-mΩ, N-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. Ultra-low capacitance improves switching speeds. When used in data line applications, the low capacitance minimizes noise coupling. This technology is capable of replacing standard small signal MOSFETs while providing a substantial reduction in footprint size.

GUID-3D3E4E6C-B356-436C-AC2D-751B112D563B-low.gif Typical Part Dimensions
Product Summary
TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 20 V
Qg Gate Charge Total (4.5 V) 0.216 nC
Qgd Gate Charge Gate-to-Drain 0.027 nC
RDS(on) Drain-to-Source
On-Resistance		 VGS = 2.5 V 2220 mΩ
VGS = 4.5 V 1170
VGS = 8 V 990
VGS(th) Threshold Voltage 1.1 V
Device Information(1)
DEVICE QTY MEDIA PACKAGE SHIP
CSD15380F3 3000 7-Inch Reel Femto
0.73-mm × 0.64-mm
Land Grid Array (LGA)		 Tape
and
Reel
CSD15380F3T 250
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
TA = 25°C (unless otherwise stated) VALUE UNIT
VDS Drain-to-Source Voltage 20 V
VGS Gate-to-Source Voltage 10 V
ID Continuous Drain Current(1) 0.9 A
Continuous Drain Current(2) 0.5
IDM Pulsed Drain Current(3) 1.6 A
PD Power Dissipation(1) 1.4 W
Power Dissipation(2) 0.5
V(ESD) Human-Body Model (HBM) 4 kV
Charged-Device Model (CDM) 2
TJ,
Tstg		 Operating Junction and
Storage Temperature		 –55 to 150 °C
(1) Typical RθJA = 90°C/W on 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB
(2) Typical RθJA = 255°C/W on min Cu board
(3) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
GUID-304492D0-C46A-4D0A-BFBA-4B7A6BE46496-low.gif Top View

4 Revision History

Changes from Revision A (July 2017) to Revision B (February 2022)

  • Changed ultra-low profile bullet from 0.35 mm to 0.36 mm in height.Go
  • Updated ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Added FemtoFET Surface Mount Guide note.Go

Changes from Revision A (July 2017) to Revision B (November 2018)

  • Changed ultra-low profile bullet from 0.35 mm to 0.36 mm in height.Go
  • Updated ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Changed ultra-low profile image height from 0.35 mm to 0.36 mm.Go
  • Added FemtoFET Surface Mount Guide note.Go

5 Specifications

5.1 Electrical Characteristics

TA = 25°C (unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, IDS = 250 μA 20 V
IDSS Drain-to-Source leakage current VGS = 0 V, VDS = 16 V 50 nA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = 10 V 25 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, IDS = 2.5 μA 0.85 1.10 1.35 V
RDS(on) Drain-to-source on-resistance VGS = 2.5 V, IDS = 0.1 A 2220 4000 mΩ
VGS = 4.5 V, IDS = 0.1 A 1170 1460
VGS = 8 V, IDS = 0.1 A 990 1190
gfs Transconductance VDS = 2 V, IDS = 0.1 A 0.64 S
DYNAMIC CHARACTERISTICS
Ciss Input capacitance VGS = 0 V, VDS = 10 V,
ƒ = 1 MHz		 8.1 10.5 pF
Coss Output capacitance 5.9 7.7 pF
Crss Reverse transfer capacitance 0.13 0.17 pF
RG Series gate resistance 9.6 Ω
Qg Gate charge total (4.5 V) VDS = 10 V, IDS = 0.1 A 0.216 0.281 nC
Qgd Gate charge gate-to-drain 0.027 nC
Qgs Gate charge gate-to-source 0.077 nC
Qg(th) Gate charge at Vth 0.048 nC
td(on) Turnon delay time VDS = 10 V, VGS = 4.5 V,
IDS = 0.1 A, RG = 0 Ω		 3 ns
tr Rise time 1 ns
td(off) Turnoff delay time 7 ns
tf Fall time 7 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage ISD = 0.1 A, VGS = 0 V 0.85 1 V

5.2 Thermal Information

TA = 25°C (unless otherwise stated)
THERMAL METRICTYPICAL VALUESUNIT
RθJAJunction-to-ambient thermal resistance(1)90°C/W
Junction-to-ambient thermal resistance(2)255
(1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.

5.3 Typical MOSFET Characteristics

TA = 25°C (unless otherwise stated)

GUID-5C09D951-8FB3-40FA-A0F1-0763BECE3ECE-low.gifFigure 5-1 Saturation Characteristics
GUID-8FDDC15C-2E7E-41B4-898B-9CE3A6E57FD2-low.pngFigure 5-3 Transient Thermal Impedance
GUID-8FCAF21D-1F49-4A40-B430-54E59D94D8B7-low.gif
VDS = 5 V
Figure 5-2 Transfer Characteristics
GUID-19B7AB7F-DEB9-429A-9DE5-CB8BB1A80E8F-low.gif
VDS = 10 VID = 0.1 A
Figure 5-4 Gate Charge
GUID-0FAB0004-73A9-49FF-9811-75E0724CB837-low.gif
ID = 2.5 µA
Figure 5-6 Threshold Voltage vs Temperature
GUID-A5ECAB26-1279-460A-97EC-AE788BA8D1E3-low.gif
ID = 0.1 A
Figure 5-8 Normalized On-State Resistance vs Temperature
GUID-8D142D4E-23A6-4D5E-9825-3E5F38E9AE59-low.gif
Single pulse, typical RθJA = 255°C/W (min Cu)
Figure 5-10 Maximum Safe Operating Area
GUID-AC869EA6-D915-4375-ACC7-5EC8E8D9B20A-low.gifFigure 5-5 Capacitance
GUID-FD6C0594-7AA4-45EF-96B6-D3AE5A67BB67-low.gifFigure 5-7 On-State Resistance vs Gate-to-Source Voltage
GUID-79660127-35D0-40B1-B637-489249BFB17E-low.gifFigure 5-9 Typical Diode Forward Voltage
GUID-042B6878-58CC-4821-BAEF-FC7B78CD04ED-low.gifFigure 5-11 Maximum Drain Current vs Temperature

6 Device and Documentation Support

6.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

6.2 Trademarks

FemtoFET are trademarks of Texas Instruments.

All trademarks are the property of their respective owners.

 
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