SLPS247E December   2009  – August 2014 CSD16340Q3

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q3 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQG|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Optimized for 5 V Gate Drive
  • Resistance Rated at VGS =2.5 V
  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 3.3-mm × 3.3-mm Plastic Package

2 Applications

  • Point of Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Control or Synchronous FET Applications

3 Description

This 25 V, 3.8 mΩ, 3.3 × 3.3 mm SON NexFET™ power MOSFET is designed to minimize losses in power conversion and optimized for 5 V gate drive applications.

Top View

p0095-01_lps202.gif

Product Summary

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge Total (4.5 V) 6.5 nC
Qgd Gate Charge Gate-to-Drain 1.2 nC
RDS(on) Drain-to-Source On-Resistance VGS = 2.5 V 6.1 mΩ
VGS = 4.5 V 4.3 mΩ
VGS = 8 V 3.8 mΩ
Vth Threshold Voltage 0.85 V


Ordering Information(1)

Device Media Qty Package Ship
CSD16340Q3 13-Inch Reel 2500 SON 3.3 x 3.3 mm Plastic Package Tape and Reel
CSD16340Q3T 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage +10 / –8 V
ID Continuous Drain Current, TC = 25°C 60 A
Continuous Drain Current(1) 21 A
IDM Pulsed Drain Current, TA = 25°C(2) 115 A
PD Power Dissipation(1) 3 W
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 40 A, L = 0.1 mH, RG = 25 Ω		 80 mJ
  1. Typical RθJA = 39°C/W on 1in2 Cu (2 oz.) on 0.060" thick FR4 PCB.
  2. Pulse width ≤300 μs, duty cycle ≤2%

RDS(on) vs VGS

G006_lps247.gif

Gate Charge

G003_lps247.gif