SLPS321G June   2012  – August 2017 CSD18531Q5A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical Packaging, and Orderable Information
    1. 7.1 Q5A Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Opening
    4. 7.4 Q5A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQJ|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low-Thermal Resistance
  • Avalanche Rated
  • Logic Level
  • Lead-Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

2 Applications

  • DC-DC Conversion
  • Secondary Side Synchronous Rectifier
  • Battery Motor Control

3 Description

This 60-V, 3.5-mΩ, 5-mm × 6-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View

CSD18531Q5A P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 60 V
Qg Gate Charge Total (10 V) 36 nC
Qgd Gate Charge Gate-to-Drain 5.9 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 4.4 mΩ
VGS = 10 V 3.5
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD18531Q5A 2500 13-Inch Reel SON
5.00-mm × 6.00-mm
Plastic Package		 Tape and Reel
CSD18531Q5AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 60 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package Limited) 100 A
Continuous Drain Current (Silicon Limited), TC = 25°C 134
Continuous Drain Current(1) 19
IDM Pulsed Drain Current(2) 400 A
PD Power Dissipation(1) 3.8 W
Power Dissipation, TC = 25°C 156
TJ Operating Junction –55 to 175 °C
Tstg Storage Temperature –55 to 175 °C
EAS Avalanche Energy, Single Pulse
ID = 67 A, L = 0.1 mH, RG = 25 Ω		 224 mJ
  1. Typical RθJA = 40°C/W on a 1-in2, 2-oz Cu pad on a
    0.06-in thick FR4 PCB.
  2. Max RθJC = 1°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD18531Q5A D007_SLPS321_r2.gif

Gate Charge

CSD18531Q5A D004_SLPS321_FP.gif