CSD19537Q3 100-V N-Channel NexFET™ Power MOSFET

1 Features

This 100-V, 12.1-mΩ, SON 3.3-mm × 3.3-mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Figure 3-1

Top View

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	100		V
Q_g	Gate Charge Total (10 V)	16		nC
Q_gd	Gate Charge Gate-to-Drain	2.9		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 6 V	13.8	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V	12.1	mΩ
V_GS(th)	Threshold Voltage	3		V

Ordering Information⁽¹⁾

DEVICE	MEDIA	QTY	PACKAGE	SHIP
CSD19537Q3	13-Inch Reel	2500	SON 3.3- x 3.3-mm Plastic Package	Tape and Reel
CSD19537Q3T	13-Inch Reel	250	SON 3.3- x 3.3-mm Plastic Package	Tape and Reel

(1) For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	100	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package Limited)	50	A
	Continuous Drain Current (Silicon Limited), T_C = 25°C	53	A
	Continuous Drain Current ⁽¹⁾	9.7	A
I_DM	Pulsed Drain Current ⁽²⁾	219	A
P_D	Power Dissipation ⁽¹⁾	2.8	W
P_D	Power Dissipation, T_C = 25°C	83	W
T_J, T_stg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, Single Pulse I_D = 33 A, L = 0.1 mH, R_G = 25 Ω	55	mJ

(1) Typical R_θJA = 45°C/W on a 1-in², 2-oz Cu pad on a 0.06-in thick FR4 PCB.

(2) Max R_θJC = 1.5°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

R_DS(on) vs V_GS

Gate Charge