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  • CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

    • SLPS454B December   2013  – January 2016 CSD25402Q3A

      PRODUCTION DATA.  

  • CONTENTS
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  • CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET
  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information
  8. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • DNH|8
    • MPDS575B
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • slps454b_oa
  • slps454b_pm
search No matches found.
  • Full reading width
    • Full reading width
    • Comfortable reading width
    • Expanded reading width
  • Card for each section
  • Card with all content

 

DATA SHEET

CSD25402Q3A –20 V P-Channel NexFET™ Power MOSFET

1 Features

  • Ultra-Low Qg and Qgd
  • Low Thermal Resistance
  • Low RDS(on)
  • Pb and Halogen Free
  • RoHS Compliant
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • DC-DC Converters
  • Battery Management
  • Load Switch
  • Battery Protection

3 Description

This –20-V, 7.7-mΩ NexFET™ power MOSFET is designed to minimize losses in power conversion load management applications with a SON 3.3 mm × 3.3 mm package that offers an excellent thermal performance for the size of the device.

Top View
CSD25402Q3A p0100-01_lps211.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-source voltage –20 V
Qg Gate charge total (–4.5 V) 7.5 nC
Qgd Gate charge gate to drain 1.1 nC
RDS(on) Drain-to-source on resistance VGS = –1.8 V 74 mΩ
VGS = –2.5 V 13.3 mΩ
VGS = –4.5 V 7.7 mΩ
Vth Threshold voltage –0.9 V

Ordering Information(1)

DEVICE QTY MEDIA PACKAGE SHIP
CSD25402Q3A 2500 13-Inch Reel SON 3.3 mm × 3.3 mm Plastic Package Tape and Reel
CSD25402Q3AT 250 7-Inch Reel
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-source voltage –20 V
VGS Gate-to-source voltage +12 or –12 V
ID Continuous drain current, TC = 25°C –76 A
Continuous drain current (package limit) –35 A
Continuous drain current(1) –15 A
IDM Pulsed drain current(2) –148 A
PD Power dissipation(1) 2.8 W
Power dissipation, TC = 25°C 69
TJ Operating junction temperature –55 to 150 °C
Tstg Storage temperature –55 to 150 °C
  1. Typical RθJA = 45°C/W on 1 inch2 Cu (2 oz.) on 0.060 inch thick FR4 PCB.
  2. Max RθJC = 2.3°C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD25402Q3A D007_SLPS454.gif

Gate Charge

CSD25402Q3A D004_SLPS454_FP.gif

4 Revision History

Changes from A Revision (July 2015) to B Revision

  • Updated Package Dimensions drawingGo
  • Updated PCB drawing. Go
  • Updated Stencil Pattern drawing. Go

Changes from * Revision (December 2013) to A Revision

  • Added part number to title. Go
  • Added 7-inch reel to Ordering Information tableGo
  • Lowered typical RθJA from 55 to 45°C/W in Absolute Maximum Ratings Table footnote. Go
  • Increased max pulsed current to –148 A. Go
  • Added line for max power dissipation with the case temperature held to 25°C in Absolute Maximum Ratings Table. Go
  • Updated pulsed current conditions. Go
  • Updated Figure 1 to a normalized RθJC curve. Go
  • Updated SOA in Figure 10Go

5 Specifications

5.1 Electrical Characteristics

(TA = 25°C unless otherwise stated)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVDSS Drain-to-source voltage VGS = 0 V, ID = –250 μA –20 V
IDSS Drain-to-source leakage current VGS = 0 V, VDS = –16 V –1 μA
IGSS Gate-to-source leakage current VDS = 0 V, VGS = ±12 V –100 nA
VGS(th) Gate-to-source threshold voltage VDS = VGS, ID = –250 μA –0.65 –0.90 –1.15 V
RDS(on) Drain-to-source on resistance VGS = –1.8 V, ID = –1 A 74 300 mΩ
VGS = –2.5 V, ID = –10 A 13.3 15.9 mΩ
VGS = –4.5 V, ID = –10 A 7.7 8.9 mΩ
gfs Transconductance VDS = –10 V, ID = –10 A 59 S
DYNAMIC CHARACTERISTICS
CISS Input capacitance VGS = 0 V, VDS = –10 V,
ƒ = 1 MHz		 1380 1790 pF
COSS Output capacitance 763 992 pF
CRSS Reverse transfer capacitance 39 51 pF
RG Series gate resistance 3.7 7.4 Ω
Qg Gate charge total (–4.5 V) VDS = –10 V, ID = –10 A 7.5 9.7 nC
Qgd Gate charge gate to drain 1.1 nC
Qgs Gate charge gate to source 2.4 nC
Qg(th) Gate charge at Vth 1.0 nC
QOSS Output charge VDS = –10 V, VGS = 0 V 7.6 nC
td(on) Turn on delay time VDS = –10 V, VGS = –4.5 V,
ID = –10 A , RG = 5 Ω		 10 ns
tr Rise time 7 ns
td(off) Turn off delay time 25 ns
tf Fall time 12 ns
DIODE CHARACTERISTICS
VSD Diode forward voltage IS = –10 A, VGS = 0 V –0.8 –1 V
Qrr Reverse recovery charge VDS = –8.5 V, IF = –10 A,
di/dt = 200 A/μs		 10.3 nC
trr Reverse recovery time 21 ns

5.2 Thermal Information

(TA = 25°C unless otherwise stated)
THERMAL METRIC MIN TYP MAX UNIT
RθJC Junction-to-case thermal resistance(1) 2.3 °C/W
RθJA Junction-to-ambient thermal resistance(1)(2) 55 °C/W
(1) RθJC is determined with the device mounted on a 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu pad on a 1.5 inch × 1.5 inch (3.81 cm × 3.81 cm), 0.06 inch (1.52 mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2) Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu.
CSD25402Q3A m0137-01_lps211.gif
Max RθJA = 55°C/W when mounted on
1 inch2 of 2 oz. Cu.
CSD25402Q3A m0137-02_lps211.gif
Max RθJA = 175°C/W when mounted on minimum pad area of
2 oz. Cu.

5.3 Typical MOSFET Characteristics

(TA = 25°C unless otherwise stated)
CSD25402Q3A D001_SLPS454.png
Figure 1. Transient Thermal Impedance
CSD25402Q3A D002_SLPS454.gif
Figure 2. Saturation Characteristics
CSD25402Q3A D004_SLPS454.gif
ID = –10 A VDS = –10 V
Figure 4. Gate Charge
CSD25402Q3A D006_SLPS454.gif
ID = –250 µA
Figure 6. Threshold Voltage vs Temperature
CSD25402Q3A D008_SLPS454.gif
ID = –10 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD25402Q3A D010_SLPS454.gif
Single Pulse, Max RθJC = 2.3°C/W
Figure 10. Maximum Safe Operating Area
CSD25402Q3A D003_SLPS454.gif
VDS = –5 V
Figure 3. Transfer Characteristics
CSD25402Q3A D005_SLPS454.gif
Figure 5. Capacitance
CSD25402Q3A D007_SLPS454.gif
Figure 7. On-State Resistance vs Gate-to-Source Voltage
CSD25402Q3A D009_SLPS454.gif
Figure 9. Typical Diode Forward Voltage
CSD25402Q3A D011_SLPS454.gif
Figure 11. Maximum Drain Current vs Temperature

 
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