CSD87502Q2 30 V Dual N-Channel NexFET™ Power MOSFETs

1 Features

Low On-Resistance
Dual Independent MOSFETs
Space Saving SON 2 × 2 mm Plastic Package
Optimized for 5 V Gate Driver
Avalanche Rated
Pb and Halogen Free
RoHS Compliant

2 Applications

Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
Adaptor or USB Input Protection for Notebook PCs and Tablets
Battery Protection

3 Description

The CSD87502Q2 is a 30 V, 27 mΩ N-Channel device with dual independent MOSFETs in a SON 2 x 2 mm plastic package. The two FETs were designed to be used in a half-bridge configuration for synchronous buck and other power supply applications. Additionally, these NexFET™ power MOSFETs can be used for adaptor, USB input protection, and battery charging applications. The dual FETs feature low drain-to-source on-resistance that minimizes losses and offers low component count for space-constrained applications.

Top View and Circuit Image

Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	30		V
Q_g	Gate Charge Total (4.5 V)	2.2		nC
Q_gd	Gate Charge Gate to Drain	0.5		nC
R_DS(on)	Drain-to-Source On Resistance	V_GS = 3.8 V	42.0	mΩ
		V_GS = 4.5 V	35.5	mΩ
		V_GS = 10 V	27.0	mΩ
V_GS(th)	Threshold Voltage	1.6		V

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Ordering Information⁽¹⁾

DEVICE	MEDIA	QTY	PACKAGE	SHIP
CSD87502Q2	7-Inch Reel	3000	SON 2 x 2 mm Plastic Package	Tape and Reel
CSD87502Q2T	7-Inch Reel	250	SON 2 x 2 mm Plastic Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	30	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package limited)	5.0	A
I_DM	Pulsed Drain Current⁽¹⁾	23	A
P_D	Power Dissipation⁽²⁾	2.3	W
T_J, T_stg	Operating Junction Temperature, Storage Temperature	–55 to 150	°C
E_AS	Avalanche Energy, single pulse I_D = 7.9 A, L = 0.1 mH, R_G = 25 Ω	3.1	mJ

Max R_θJA = 185 °C/W, pulse duration ≤100 μs, duty cycle ≤1%.
Typical R_θJA = 55 °C/W on a 1 inch², 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.

R_DS(on) vs V_GS

Gate Charge

4 Revision History

DATE	REVISION	NOTES
December 2015	*	Initial release.

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-source voltage	V_GS = 0 V, I_D = 250 μA	30			V
I_DSS	Drain-to-source leakage current	V_GS = 0 V, V_DS = 24 V			1	μA
I_GSS	Gate-to-source leakage current	V_DS = 0 V, V_GS = 20 V			4	μA
V_GS(th)	Gate-to-source threshold voltage	V_DS = V_GS, I_D = 250 μA	1.2	1.6	2.0	V
R_DS(on)	Drain-to-source on-resistance	V_GS = 3.8 V, I_D = 4 A		42.0	60.0	mΩ
		V_GS = 4.5 V, I_D = 4 A		35.5	42.0	mΩ
		V_GS = 10 V, I_D = 4 A		27.0	32.4	mΩ
g_fs	Transconductance	V_DS = 3 V, I_D = 4 A		75		S
DYNAMIC CHARACTERISTICS
C_iss	Input capacitance	V_GS = 0 V, V_DS = 15 V, ƒ = 1 MHz		272	353	pF
C_oss	Output capacitance			42	55	pF
C_rss	Reverse transfer capacitance			22	29	pF
R_G	Series gate resistance			6.9		Ω
Q_g	Gate charge total (4.5 V)	V_DS = 15 V, I_D = 4 A		2.2	2.9	nC
Q_g	Gate charge total (10 V)			4.6	6.0	nC
Q_gd	Gate charge gate to drain			0.5		nC
Q_gs	Gate charge gate to source			1.0		nC
Q_g(th)	Gate charge at V_th			0.5		nC
Q_oss	Output charge	V_DS = 15 V, V_GS = 0 V		1.4		nC
t_d(on)	Turn on delay time	V_DS = 15 V, V_GS = 5 V, I_DS = 4 A, R_G = 0 Ω		3		ns
t_r	Rise time			11		ns
t_d(off)	Turn off delay time			12		ns
t_f	Fall time			3		ns
DIODE CHARACTERISTICS
V_SD	Diode forward voltage	I_SD = 4 A, V_GS = 0 V		0.85	1.0	V
Q_rr	Reverse recovery charge	V_DS= 15 V, I_F = 4 A, di/dt = 300 A/μs		4.0		nC
t_rr	Reverse recovery time	V_DS= 15 V, I_F = 4 A, di/dt = 300 A/μs		6.4		ns