Loading [MathJax]/jax/output/SVG/fonts/TeX/fontdata.js
Menu
Product
Email
PDF
Order now
INA950-SEP 2.7V to 80V, 1.1MHz, Ultra-Precise, Current-Sense Amplifier
SBOSAK8
March 2025
INA950-SEP
PRODUCTION DATA
CONTENTS
SEARCH
INA950-SEP 2.7V to 80V, 1.1MHz, Ultra-Precise, Current-Sense Amplifier
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Typical Characteristics
6
Detailed Description
6.1
Overview
6.2
Functional Block Diagram
6.3
Feature Description
6.3.1
Amplifier Input Common-Mode Range
6.3.2
Input-Signal Bandwidth
6.3.3
Low Input Bias Current
6.3.4
Low VSENSE Operation
6.3.5
Wide Fixed-Gain Output
6.4
Device Functional Modes
6.4.1
Unidirectional Operation
6.4.2
High Signal Throughput
7
Application and Implementation
7.1
Application Information
7.1.1
RSENSE and Device Gain Selection
7.1.2
Input Filtering
7.2
Typical Application
7.2.1
Design Requirements
7.2.2
Detailed Design Procedure
7.2.2.1
Overload Recovery With Negative VSENSE
7.2.3
Application Curve
7.3
Power Supply Recommendations
7.4
Layout
7.4.1
Layout Guidelines
7.4.2
Layout Examples
8
Device and Documentation Support
8.1
Documentation Support
8.1.1
Related Documentation
8.2
Receiving Notification of Documentation Updates
8.3
Support Resources
8.4
Trademarks
8.5
Electrostatic Discharge Caution
8.6
Glossary
9
Revision History
10
Mechanical, Packaging, and Orderable Information
10.1
Mechanical Data
IMPORTANT NOTICE
Package Options
Mechanical Data (Package|Pins)
PW|8
MPDS568
Thermal pad, mechanical data (Package|Pins)
Orderable Information
sbosak8_oa
sbosak8_pm
search
No matches found.
Full reading width
Full reading width
Comfortable reading width
Expanded reading width
Card for each section
Card with all content
Data Sheet
INA950-SEP
2.7V to 80V, 1.1MHz, Ultra-Precise, Current-Sense Amplifier
1
Features
VID V62/25635
Radiation - Total Ionizing Dose (TID):
TID performance assurance up to 30krad(Si)
Radiation Lot Acceptance Testing (RLAT) for every wafer lot up to 30krad(Si)
Radiation - Single-Event Effects (SEE):
Single Event Latch-Up (SEL) immune up to 43MeV-cm
2
/mg at 125°C
Single Event Transient (SET) characterized up to LET = 47.5MeV-cm2 /mg
Space Enhanced Plastic
Operating temperature from –55°C to +125°C
Controlled baseline
Au bondwire and NiPdAu lead finish
Outgassing test performed per ASTM E595
One fabrication, assembly, and test site
Extended product life cycle
Product traceability
Wide common-mode voltage:
Operational voltage: 2.7V to 80V
Survival voltage: −20V to 85V
Excellent CMRR:
160dB DC
85dB AC at 50kHz
Gain of 20V/V
Gain error: ±0.1% (maximum)
Gain drift: ±1.5ppm/°C
Offset voltage: ±12µV (maximum)
Offset drift: ±0.05µV/°C
High bandwidth: 1.1MHz
Slew rate: 2V/µs
Quiescent current: 370µA