LMG2610 Integrated 650-V GaN Half Bridge for Active-Clamp Flyback Converters

1 Features

650-V GaN power-FET half bridge
170-mΩ low-side and 248-mΩ high-side GaN FETs
Integrated gate drivers with low propagation delays and adjustable turn-on slew-rate control
Current-sense emulation with high-bandwidth and high accuracy
Low-side / high-side gate-drive interlock
High-side gate-drive signal level shifter
Smart-switched bootstrap diode function
High-side start up : < 8 us
Low-side / high-side cycle-by-cycle over-current protection
Over-temperature protection with FLT pin reporting
AUX idle quiescent current: 240 μA
AUX standby quiescent current: 50 μA
BST idle quiescent current: 60 μA
Maximum supply and input logic pin voltage: 26 V
9x7 mm QFN package with dual thermal pads