LMG341xR070 600-V 70-mΩ GaN with Integrated Driver and Protection

1 Features

• TI GaN Process Qualified Through Accelerated Reliability In-application Hard-switching Mission Profiles
• Enables High Density Power Conversion Designs
  • Superior System Performance Over Cascode or Stand-alone GaN FETs
  • Low Inductance 8mm x 8mm QFN Package for Ease of Design, and Layout
  • Adjustable Drive Strength for Switching Performance and EMI Control
  • Digital Fault Status Output Signal
  • Only +12 V Unregulated Supply Needed
• Integrated Gate Driver
  • Zero Common Source Inductance
  • 20 ns Propagation Delay for MHz Operation
  • Process-tuned Gate Bias Voltage for Reliability
  • 25 to 100V/ns User Adjustable Slew Rate
• Robust Protection
  • Requires No External Protection Components
  • Over-current Protection with <100ns Response
  • >150V/ns Slew Rate Immunity
  • Transient Overvoltage Immunity
  • Overtemperature Protection
  • UVLO Protection on All Supply Rails
• Device Options:
  • LMG3410R070: Latched Overcurrent Protection
  • LMG3411R070: Cycle-by-cycle Overcurrent Protection