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LMG352xR050 650V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting
SLUSEY6A
September 2023 – May 2024
LMG3522R050
,
LMG3526R050
PRODUCTION DATA
CONTENTS
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LMG352xR050 650V 50mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting
1
1
Features
2
Applications
3
Description
4
Pin Configuration and Functions
5
Specifications
5.1
Absolute Maximum Ratings
5.2
ESD Ratings
5.3
Recommended Operating Conditions
5.4
Thermal Information
5.5
Electrical Characteristics
5.6
Switching Characteristics
5.7
Typical Characteristics
6
Parameter Measurement Information
6.1
Switching Parameters
6.1.1
Turn-On Times
6.1.2
Turn-Off Times
6.1.3
Drain-Source Turn-On Slew Rate
6.1.4
Zero-Voltage Detection Times
6.2
Safe Operation Area (SOA)
6.2.1
Repetitive SOA
7
Detailed Description
7.1
Overview
7.2
Functional Block Diagram
7.2.1
LMG3522R050 Functional Block Diagram
7.2.2
LMG3526R050 Functional Block Diagram
7.3
Feature Description
7.3.1
GaN FET Operation Definitions
7.3.2
Direct-Drive GaN Architecture
7.3.3
Drain-Source Voltage Capability
7.3.4
Internal Buck-Boost DC-DC Converter
7.3.5
VDD Bias Supply
7.3.6
Auxiliary LDO
7.3.7
Fault Protection
7.3.7.1
Overcurrent Protection and Short-Circuit Protection
7.3.7.2
Overtemperature Shutdown Protection
7.3.7.3
UVLO Protection
7.3.7.4
High-Impedance RDRV Pin Protection
7.3.7.5
Fault Reporting
7.3.8
Drive-Strength Adjustment
7.3.9
Temperature-Sensing Output
7.3.10
Ideal-Diode Mode Operation
7.3.10.1
Overtemperature-Shutdown Ideal-Diode Mode
7.3.11
Zero-Voltage Detection (ZVD)
7.4
Start-Up Sequence
7.5
Device Functional Modes
8
Application and Implementation
8.1
Application Information
8.2
Typical Application
8.2.1
Design Requirements
8.2.2
Detailed Design Procedure
8.2.2.1
Slew Rate Selection
8.2.2.1.1
Start-Up and Slew Rate With Bootstrap High-Side Supply
8.2.2.2
Signal Level-Shifting
8.2.2.3
Buck-Boost Converter Design
8.2.3
Application Curves
8.3
Do's and Don'ts
8.4
Power Supply Recommendations
8.4.1
Using an Isolated Power Supply
8.4.2
Using a Bootstrap Diode
8.4.2.1
Diode Selection
8.4.2.2
Managing the Bootstrap Voltage
8.5
Layout
8.5.1
Layout Guidelines
8.5.1.1
Solder-Joint Reliability
8.5.1.2
Power-Loop Inductance
8.5.1.3
Signal-Ground Connection
8.5.1.4
Bypass Capacitors
8.5.1.5
Switch-Node Capacitance
8.5.1.6
Signal Integrity
8.5.1.7
High-Voltage Spacing
8.5.1.8
Thermal Recommendations
8.5.2
Layout Examples
9
Device and Documentation Support
9.1
Documentation Support
9.1.1
Related Documentation
9.2
Receiving Notification of Documentation Updates
9.3
Support Resources
9.4
Trademarks
9.5
Electrostatic Discharge Caution
9.6
Export Control Notice
9.7
Glossary
10
Revision History
11
Mechanical, Packaging, and Orderable Information
IMPORTANT NOTICE
Package Options
Mechanical Data (Package|Pins)
RQS|52
MPQF571F
Thermal pad, mechanical data (Package|Pins)
RQS|52
QFND671A
Orderable Information
slusey6a_oa
slusey6a_pm
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Data Sheet
LMG352xR050
650
V
50
mΩ GaN FET With Integrated Driver, Protection, and Temperature Reporting