SN54SC4T08-SEP Radiation-Tolerant, 1.2-V to 5.5-V, Quadruple 2-Input Positive-AND Gates With Integrated Translation

1 Features

Vendor item drawing available, VID V62/23620
Total ionizing dose characterized at 30 krad(Si)
- Total ionizing dose characterized radiation lot acceptance testing (TID RLAT) for every wafer lot to 30 krad(Si)
Single-event effects (SEE) characterized:
- Single event latch-up (SEL) immune to linear energy transfer (LET) = 43 MeV-cm2 /mg
- Single event transient (SET) characterized to 43 MeV-cm2 /mg
Wide operating range of 1.2 V to 5.5 V
Single-supply translating gates at
5/3.3/2.5/1.8/1.2 V V_CC
- TTL compatible inputs:
  - Up translation:
    - 1.8-V – Inputs from 1.2 V
    - 2.5-V – Inputs from 1.8 V
    - 3.3-V – Inputs from 1.8 V, 2.5 V
    - 5.0-V – Inputs from 2.5 V, 3.3 V
  - Down translation:
    - 1.2-V – Inputs from 1.8 V, 2.5 V, 3.3 V,
      5.0 V
    - 1.8-V – Inputs from 2.5 V, 3.3 V, 5.0 V
    - 2.5-V – Inputs from 3.3 V, 5.0 V
    - 3.3-V – Inputs from 5.0 V
5.5 V tolerant input pins
Output drive up to 25 mA at 5-V
Latch-up performance exceeds 250 mA per
JESD 17
Space enhanced plastic (SEP)
- Controlled baseline
- Gold bondwire
- NiPdAu lead finish
- One assembly and test site
- One fabrication site
- Military (–55°C to 125°C) temperature range
- Extended product life cycle
- Extended product-change notification (PCN)
- Product traceability
- Meets NASAs ASTM E595 outgassing specification