DATA SHEET
TPD1E01B04-Q1 Automotive 0.2-pF, ±3.6-V, ±15-kVESD Protection Diode in 0402 Package
1 Features
- IEC 61000-4-2 level 4 ESD protection
- ±15-kV contact discharge
- ±17-kV air gap discharge
- IEC 61000-4-4 EFT protection
- 80 A (5/50 ns)
- IEC 61000-4-5 surge protection
- 2.5 A (8/20 µs)
- IO capacitance:
- 0.20 pF (typical)
- 0.23 pF (maximum)
- DC breakdown voltage: 6.4 V (typical)
- Ultra low leakage current: 10-nA (maximum)
- Low ESD clamping voltage: 15 V at 16 A TLP
- Low insertion loss: 20 GHz
- Supports high speed interfaces up to 20 Gbps
- Industry standard 0402 footprint
- AEC-Q101
qualified
- Device HBM classification level H2
- Device CDM classification level C5
- Device operating temperature range: –40°C to +125°C
2 Applications
- End equipment
- Interfaces
- Automotive SerDes: FPD-Link
- USB Type-C
- USB 3.1 Gen 2/3.0/2.0
- HDMI 2.0/1.4
- 10/100/1000 Mbps ethernet
3 Description
The TPD1E01B04-Q1 is a bidirectional TVS ESD protection diode for USB Type-C and FPD-Link circuit protection. The TPD1E01B04-Q1 is rated to dissipate ESD strikes at the maximum level specified in the IEC 61000-4-2 international standard (Level 4).
This device features a 0.20-pF (typical) IO capacitance making it ideal for protecting high-speed interfaces up to 20 Gbps such as USB 3.1 Gen2 and FPD-Link. The low dynamic resistance and low clamping voltage ensure system level protection against transient events.
The TPD1E01B04-Q1 is offered in the industry standard 0402 (DPY) package.
Device Information(1)
| PART NUMBER | PACKAGE | BODY SIZE (NOM) |
|---|---|---|
| TPD1E01B04-Q1 | X1SON (2) | 1.00 mm x 0.60 mm |
(1) For all available packages, see the orderable addendum at the
end of the data sheet.
Typical Application4 Revision History
Changes from Revision * (May 2021) to Revision A (December 2021)
- Changed the status of the data sheet from: Advanced Information to: Production Data Go
5 Pin Configuration and Functions
Figure 5-1 DPY Package2-Pin X1SONTop ViewTable 5-1 Pin Functions
| PIN | TYPE(1) | DESCRIPTION | |
|---|---|---|---|
| NO. | NAME | ||
| 1 | IO | I/O | ESD Protected Channel. If used as ESD IO, connect pin 2 to ground |
| 2 | IO | I/O | ESD Protected Channel. If used as ESD IO, connect pin 1 to ground |
(1) I = input, O = output
6 Specifications
6.1 Absolute Maximum Ratings
over operating free-air temperature range (unless otherwise noted)(1)
| MIN | MAX | UNIT | ||
|---|---|---|---|---|
| Electrical fast transient | IEC 61000-4-5 (5/50 ns) at 25°C | 80 | A | |
| Peak pulse | IEC 61000-4-5 power (tp - 8/20 µs) at 25°C | 27 | W | |
| IEC 61000-4-5 current (tp - 8/20 µs) at 25°C | 2.5 | A | ||
| TA | Operating free-air temperature | –40 | 125 | °C |
| Tstg | Storage temperature | –65 | 155 | °C |
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute maximum ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If briefly operating outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not sustain damage, but it may not be fully functional. Operating the device in this manner may affect device reliability, functionality, performance, and shorten the device lifetime.
6.2 ESD Ratings—AEC Specification
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | Human body model (HBM), per AEC Q101-001 | ±2500 | V |
| Charged device model (CDM), per AEC Q101-005 | ±1000 | |||
6.3 ESD Ratings—IEC Specification
| VALUE | UNIT | |||
|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | IEC 61000-4-2 Contact Discharge, all pins | ±15000 | V |
| IEC 61000-4-2 Air-gap Discharge, all pins | ±17000 | |||
6.4 ESD Ratings—ISO Specification
| VALUE | UNIT | ||||
|---|---|---|---|---|---|
| V(ESD) | Electrostatic discharge | ISO 10605, 330-pF, 330-Ω, IO | Contact discharge | ± 12500 | V |
| Air-gap discharge | ±15000 | ||||
6.5 Recommended Operating Conditions
over operating free-air temperature range (unless otherwise noted)
| MIN | NOM | MAX | UNIT | ||
|---|---|---|---|---|---|
| VIO | Input pin voltage | –3.6 | 3.6 | V | |
| TA | Operating free-air temperature | –40 | 125 | °C | |
6.6 Thermal Information
| THERMAL METRIC(1) | TPD1E01B04-Q1 | UNIT | |
|---|---|---|---|
| DPY (X1SON) | |||
| 2 PINS | |||
| RθJA | Junction-to-ambient thermal resistance | 442.6 | °C/W |
| RθJC(top) | Junction-to-case (top) thermal resistance | 243.8 | °C/W |
| RθJB | Junction-to-board thermal resistance | 162.5 | °C/W |
| ΨJT | Junction-to-top characterization parameter | 154.1 | °C/W |
| ΨJB | Junction-to-board characterization parameter | 163.0 | °C/W |
| RθJC(bot) | Junction-to-case (bottom) thermal resistance | n/a | °C/W |
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.
6.7 Electrical Characteristics
over operating free-air temperature range (unless otherwise noted)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| VRWM | Reverse stand-off voltage | IIO < 10 nA | –3.6 | 3.6 | V | ||
| VBRF | Breakdown voltage, IO pin to GND | Measured as the maximum voltage before device snaps back into VHOLD voltage | 6.4 | V | |||
| VBRR | Breakdown voltage, GND to IO pin | –6.4 | V | ||||
| VHOLD | Holding voltage | IIO = 1 mA, TA = 25°C | 5 | 5.9 | 6.5 | V | |
| VCLAMP | Clamping voltage | IPP = 1 A, TLP, from IO to GND | 7 | V | |||
| IPP = 5 A, TLP, from IO to GND | 9.2 | ||||||
| IPP = 16 A, TLP, from IO to GND | 15 | ||||||
| IPP = 1 A, TLP, from GND to IO | 7 | ||||||
| IPP = 5 A, TLP, from GND to IO | 9.2 | ||||||
| IPP = 16 A, TLP, from GND to IO | 15 | ||||||
| ILEAK | Leakage current, IO to GND | VIO = ±2.5 V | 10 | nA | |||
| RDYN | Dynamic resistance | IO to GND | 0.57 | Ω | |||
| GND to IO | 0.57 | ||||||
| CL | Line capacitance | VIO = 0 V, f = 1 MHz, IO to GND, TA = 25°C | 0.2 | 0.23 | pF | ||
6.8 Typical Characteristics
Figure 6-1 Positive TLP Curve
Figure 6-3 8-kV IEC Waveform
Figure 6-5 Surge Curve (tp = 8/20µs), IO pin to GND
Figure 6-7 Capacitance vs. Bias Voltage (DPY Package)
Figure 6-9 DC Voltage Sweep I-V Curve
Figure 6-11 Insertion Loss
Figure 6-2 Negative TLP Curve
Figure 6-4 –8-kV IEC WaveformFigure 6-6 Capacitance vs. Bias
Voltage 
Figure 6-8 Leakage Current vs. Temperature
Figure 6-10 Capacitance vs. Frequency7 Detailed Description
7.1 Overview
The TPD1E01B04-Q1 device is a bidirectional ESD Protection Diode with ultra-low capacitance. This device can dissipate ESD strikes above the maximum level specified by the IEC 61000-4-2 International Standard. The ultra-low capacitance makes this device ideal for protecting any super high-speed signal pins including Thunderbolt 3. The low capacitance allows for extremely low losses even at RF frequencies such as USB 3.1 Gen 2, Thunderbolt 3, or antenna applications.