TPS25200-Q1 5-V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp
- SLVSCU5 March 2015 TPS25200-Q1
  
  PRODUCTION DATA.

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DATA SHEET

TPS25200-Q1 5-V eFuse With Precision Adjustable Current Limit and Overvoltage Clamp

1 Features

Qualified for Automotive Applications
AEC-Q100 Qualified With the Following Results:
- Device HBM Classification Level 2
- Device CDM Classification Level C5
2.5-V to 6.5-V Operation
20-V Continuous V_IN (Absolute Maximum)
7.6-V Input Overvoltage Shutoff
5.25-V to 5.55-V Fixed Overvoltge Clamp
0.6-μs Overvoltage Lockout Response
3.5-μs Short-Circuit Response
67-mΩ High-Side MOSFET
Accurate 2.5-A Minimum, 2.9-A Maximum and 2.1-A Minimum, 2.5-A Maximum Setting (Including Resistor)
±6.3% Current-Limit Accuracy at 2.7 A
Reverse Current Blocking While Disabled
Built-in Soft Start
Pin-to-Pin Compatible with TPS2553

2 Applications

Automotive USB Port Protection
USB Power Switch .
USB Slave Devices

3 Description

The TPS25200-Q1 device is a 5-V eFuse with a precision current-limit and overvoltage clamp. The device provides robust protection for load and source during overvoltage and overcurrent events.

The TPS25200-Q1 device is an intelligent protected load-switch with a V_IN value tolerant to 20 V. In the event that an incorrect voltage is applied at the IN pin, the output clamps to 5.4 V to protect the load. If the voltage at the IN pin exceeds 7.6 V, the device disconnects the load to prevent damage to the device, load, or both.

The TPS25200-Q1 device has an internal 67-mΩ power switch and is intended for protecting the source, device, and load under a variety of abnormal conditions. The device provides up to 2.4 A of continuous load current. The current-limit is programmable from 85 mA to 2.7 A with a single resistor to ground. During overload events, the output current is limited to the level set by the R_ILIM resistor. If a persistent overload occurs, the device eventually enters thermal shutoff to prevent damage to the TPS25200-Q1 device.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
TPS25200-Q1	WSON (6)	2.00 mm × 2.00 mm

For all available packages, see the orderable addendum at the end of the datasheet.

4 Simplified Schematic

TPS25200-Q1 simplified_schem_slvscu5.gif

V_OUT vs V_IN

5 Revision History

DATE	REVISION	NOTES
March 2015	*	Initial release.

6 Pin Configuration and Functions

DRV Package

6-Pin WSON With Exposed Thermal Pad

Top View

Pin Functions

PIN		I/O	DESCRIPTION
NAME	NO.	I/O	DESCRIPTION
EN	4	I	Logic-level control input. When this pin is driven high, the power switch is enabled. When this pin is driven low, the power switch turns off. This pin cannot be left floating and it must be limited below the absolute maximum rating if tied to the IN pin.
FAULT	3	O	Active-low open-drain output. This pin is asserted during an overcurrent, overvoltage, or overtemperature event. Connect a pullup resistor to the logic I/O voltage.
GND	5	—	Ground connection. Connect this pin externally to the exposed thermal pad.
ILIM	2	O	External resistor. The ILIM pin is used to set the current-limit threshold. The recommended value for this pin is: 36 kΩ ≤ R_ILIM ≤ 1100 kΩ.
IN	6	I	Input voltage. Connect a ceramic capacitor with a value of 0.1 μF or greater from the IN pin to the GND pin as close to the IC as possible.
OUT	1	O	Protected power switch, V_OUT.
Thermal pad		—	The exposed thermal pad is internally connected to the GND pin. Use the thermal pad to heat-sink the device to the circuit board traces. Connect the thermal pad to the GND pin externally.

7 Specifications

7.1 Absolute Maximum Ratings

over operating free-air temperature range, voltage are referenced to GND (unless otherwise noted)⁽¹⁾

		MIN	MAX	UNIT
Voltage	IN	–0.3	20	V
	OUT, EN, ILIM, FAULT	–0.3	7	V
	From IN to OUT	–7	20	V
Continuous output current, I_O		Thermally Limited
Continuous FAULT output sink current			25	mA
Continuous ILIM output source current			150	µA
Operating junction temperature, T_J		Internally limited
Storage temperature, T_stg		–65	150	°C

(1) Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

7.2 ESD Ratings

				VALUE	UNIT
V_(ESD)	Electrostatic discharge	Human body model (HBM), per AEC Q100-002⁽¹⁾		±2000	V
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per AEC Q100-011		±750	V

(1) AEC Q100-002 indicates HBM stressing is done in accordance with the ANSI/ESDA/JEDEC JS-001 specification.

7.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

		MIN	MAX	UNIT
V_IN	Input voltage of IN	2.5	6.5	V
V_EN	Enable pin voltage	0	6.5	V
I_FAULT	Continuous FAULT sink current	0	10	mA
I_OUT	Continuous output current of OUT		2.4	A
R_ILIM	Current-limit set resistors	36	1100	kΩ
T_J	Operating junction temperature	–40	125	°C

7.4 Thermal Information

THERMAL METRIC⁽¹⁾		DRV (WSON)	UNIT
THERMAL METRIC⁽¹⁾		6 PINS	UNIT
R_θJA	Junction-to-ambient thermal resistance	66.5	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	83.4
R_θJB	Junction-to-board thermal resistance	36.1
ψ_JT	Junction-to-top characterization parameter	1.6
ψ_JB	Junction-to-board characterization parameter	36.5
R_θJC(bot)	Junction-to-case (bottom) thermal resistance	7.6

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

7.5 Electrical Characteristics

Conditions are –40°C ≤ T_J ≤ 125°C and 2.5 V ≤ V_IN ≤ 6.5 V. V_EN = V_IN, R_ILIM = 36 kΩ. Positive current into pins. Typical value is at 25°C. All voltages are with respect to ground (unless otherwise noted).

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
POWER SWITCH
r_DS(on)	IN–OUT resistance⁽¹⁾	2.5 V ≤ V_IN ≤ 5 V, I_OUT = 2.4 A	T_J = 25°C		67	75	mΩ
			–40°C ≤ T_J ≤ 85°C		67	95
			–40°C ≤ T_J ≤ 125°C		67	105
ENABLE INPUT EN
	EN pin turn on threshold	Input rising				1.9	V
	EN pin turn off threshold	Input falling		0.6			V
	Hysteresis				330⁽²⁾		mV
I_EN	Leakage current	V_EN = 0 V or 5.5 V		–2		2	µA
DISCHARGE
R_DCHG	OUT Discharge Resistance	V_OUT = 5 V, V_EN = 0 V			500	625	Ω
CURRENT LIMIT
I_OS	Current-limit, see Figure 12	R_ILIM = 36 kΩ		2530	2700	2870	mA
		R_ILIM = 42.2 kΩ		2140	2300	2460
		R_ILIM = 56 kΩ		1620	1740	1860
		R_ILIM= 80.6 kΩ		1110	1206	1300
		R_ILIM = 150 kΩ		590	647	710
		R_ILIM = 1100 kΩ		40	83	130
OVERVOLTAGE LOCKOUT, IN
V_(OVLO)	IN rising OVLO threshold voltage	IN rising		6.8	7.6	8.45	V
	Hysteresis				70⁽²⁾		mV
VOLTAGE CLAMP, OUT
V_(OVC)	OUT clamp voltage threshold	C_L = 1 µF, R_L = 100 Ω, V_IN = 6.5 V		5.25	5.4	5.55	V
SUPPLY CURRENT
I_IN(off)	Supply current, low-level output	V_EN = 0 V, V_IN = 5 V			1	5	µA
I_IN(off)	Supply current, low-level output	V_EN = 0 or 5 V, V_IN = 20 V			1040	1700	µA
I_IN(on)	Supply current, high-level output	V_IN = 5 V, No load on OUT	R_ILIM = 36 kΩ		147	200	µA
I_IN(on)	Supply current, high-level output	V_IN = 5 V, No load on OUT	R_ILIM = 150 kΩ		120	190	µA
I_REV	Reverse leakage current	V_OUT = 6.5V, V_IN = V_EN = 0 V, T_J= 25°C, Measure I_OUT			3.2	5	µA
UNDERVOLTAGE LOCKOUT, IN
V_UVLO	IN rising UVLO threshold voltage	IN rising			2.35	2.45	V
	Hysteresis				30⁽²⁾		mV
FAULT FLAG
V_OL	Output low voltage, FAULT	I_FAULT = 1 mA			50	180	mV
	Off-state leakage	V_FAULT = 6.5 V				1	µA
THERMAL SHUTDOWN
	Thermal shutdown threshold, OTSD2⁽³⁾			155			°C
	Thermal shutdown threshold only in current-limit, OTSD1⁽³⁾			135
	Hysteresis				20⁽²⁾

(1) Pulse-testing techniques maintain junction temperature close to ambient temperature. Thermal effects must be taken into account separately.

(2) These parameters are provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.

(3) For more information on the thermal sensors, OTSD1 and OTSD2, see the Thermal Sense section.

7.6 Switching Characteristics

Conditions are –40°C ≤ T_J ≤ 125°C and 2.5 V ≤ V_IN ≤ 6.5 V. V_EN = V_IN, R_ILIM = 36 kΩ. Positive current are into pins. Typical value is at 25°C. All voltages are with respect to GND (unless otherwise noted)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
POWER SWITCH
t_r	OUT voltage rise time	C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		2.05	3.2	ms
t_f	OUT voltage fall time	C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		0.18	0.2	ms
ENABLE INPUT EN
t_on	Turn-on time	2.5 V ≤ V_IN ≤ 5 V, C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		5.12	7.3	ms
t_off	Turn-off time	2.5 V ≤ V_IN ≤ 5 V, C_L = 1 µF, R_L = 100 Ω, (see Figure 10)		0.22	0.3	ms
CURRENT LIMIT
t_(IOS)	Short-circuit response time	V_IN = 5 V (see Figure 12)		3.5⁽¹⁾		µs
OVERVOLTAGE LOCKOUT, IN
t_{(OVLO_off_delay)}	Turn-off Delay for OVLO	V_IN = 5 V to 10 V with 1 V/µs ramp-up rate, V_OUT with 100-Ω load		0.6⁽¹⁾		µs
FAULT FLAG
	FAULT deglitch	FAULT assertion or deassertion because of overcurrent condition	5	8	12	ms

(1) This parameter is provided for reference only and does not constitute part of TI's published device specifications for purposes of TI's product warranty.

7.7 Typical Characteristics

R_ILIM = 36 KΩ

Figure 1. I_IN(on) vs Junction Temperature

R_ILIM = 36 KΩ

Figure 2. I_IN(off) vs Junction Temperature

V_EN = V_IN = 0 V	V_OUT = 6.5 V

Figure 3. I_REV vs Junction Temperature

Figure 5. V_(OVLO) vs Junction Temperature

Figure 7. I_OS vs Junction Temperature

Figure 4. r_DS(ON) vs Junction Temperature

C_L = 1 µF	R_L = 100 Ω	V_IN = 6.5 V

Figure 6. V_O(VC)vs Junction Temperature

Figure 8. Discharge Resistance vs V_IN