TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1 Features

Standard micro circuit available, SMD 5962R17220
Vendor item drawing available, VID V62/23608
Radiation performance:
- Radiation hardness assurance (RHA) up to TID 100krad(Si)
- Single event latchup (SEL), single event burnout (SEB), and single event gate rupture (SEGR) immune to LET = 75MeV-cm²/mg
- SEFI/SET characterized to
  LET = 75MeV-cm²/mg
Integrated single channel eFuse
Input voltage range: 1.5V to 7V
Low on-resistance (R_ON) of :
- 35mΩ maximum at 25°C and VIN = 5V for CFP and KGD
- 23mΩ maximum at 25°C and VIN = 5V for HTSSOP
6-A maximum continuous switch current
Low control input threshold enables use of
1.2, 1.8, 2.5, and 3.3V logic
Configurable rise time (soft start)
Reverse current protection
Programmable and internal current limiting
(fast-trip)
Programmable fault timer (current limit and
retry modes)
Thermal shutdown
Ceramic and plastic package with thermal pad

2 Applications

Space satellite power management and distribution
Radiation hardened and tolerant power tree applications
Available in military (–55°C to 125°C) temperature range

3 Description

The TPS7H2201 is a single channel eFuse that provides configurable rise time to minimize inrush current and reverse current protection. The device contains a P-channel MOSFET that can operate over an input voltage range of 1.5V to 7V and can support a maximum continuous current of 6A. The switch is controlled by an on and off input (EN), which is capable of interfacing directly with low-voltage control signals.

The TPS7H2201 is available in a ceramic and plastic package with integrated thermal pad allowing for high power dissipation. The device is characterized for operation over the free-air temperature range of
–55°C to 125°C.

Device Information

PART NUMBER⁽¹⁾	GRADE	PACKAGE
5962R1722001VXC	Flight grade RHA 100krad(Si)	16-pin CDFP 11.00 × 9.60mm Weight: 1.56g⁽³⁾
5962-1722001VXC	Flight grade QMLV
TPS7H2201HKR/EM	Engineering samples⁽²⁾
TPS7H2201MDAPTSEP	SEP	32-pin HTSSOP 6.10 × 11.00mm Weight: 0.191g⁽³⁾
TPS7H2201EVM-CVAL	Ceramic evaluation board	EVM

(1) For all available packages, see the orderable addendum at the end of the data sheet. Also refer to Device Options.

(2) These units are intended for engineering evaluation only. They are processed to a noncompliant flow. These units are not suitable for qualification, production, radiation testing or flight use. Parts are not warranted for performance over the full MIL specified temperature range of –55°C to 125°C or operating life.

(3) Dimension and mass values are nominal.

Simplified Schematic

4 Device Options

GENERIC PART NUMBER	RADIATION RATING⁽¹⁾	GRADE⁽²⁾	PACKAGE	ORDERABLE PART NUMBER
TPS7H2201-SP	TID of 100 krad(Si) RLAT, DSEE free to 75 MeV-cm²/mg	QMLV-RHA	16-pin HKR CFP	5962R1722001VXC
		QMLP-RHA	32-pin DAP HTSSOP	5962R1722002PYE
		KGD (QMLV-RHA)	Die	5962R1722001V9A
	None	Engineering Model ⁽³⁾	16-pin HKR CFP	PTS7H2201HKR/EM
	None	Engineering Model ⁽³⁾	Die	TPS7H2201Y/EM
TPS7H2201-SEP	TID of 50 krad(Si) RLAT, DSEE free to 43 MeV-cm²/mg	Space Enhanced Plastic	32-pin DAP HTSSOP	TPS7H2201MDAPTSEP

(1) TID is total ionizing dose and DSEE is destructive single event effects. Additional information is available in the associated TID reports and SEE reports for each product.

(2) For additional information about part grade, view SLYB235.

(3) These units are intended for engineering evaluation only. They are processed to a non-compliant flow (such as no burn-in and only 25°C testing). These units are not suitable for qualification, production, radiation testing, or flight use. Parts are not warranted as to performance over temperature or operating life.

5 Pin Configuration and Functions

HKR Package	DAP Package
16-Pin CFP With Thermal Pad	32-Pin HTSSOP With Thermal Pad
Top View	Top View

Table 5-1 Pin Functions

PIN			I/O^⁽¹⁾	DESCRIPTION
HKR (16) NO.	PW (32) NO.	NAME	I/O^⁽¹⁾	DESCRIPTION
1-4	1-10	VIN	I	Switch input. Input bypass capacitor recommended for minimizing V_IN dip.
5	11	CS	O	Current sense pin proportional to output current. Connect a resistor to GND.
6	12	EN	I	Active high switch control input. Do not leave floating.
7	13	OVP	I	Overvoltage protection. Programmable using an external resistor divider. If no OVP is desired, this pin should be connected to GND.
8	15	GND	—	Device ground. ^⁽²⁾
9	18	RTIMER	I/O	Capacitor programmed fault timer control during disabled and retry mode. Connecting this pin to GND holds the switch disabled until the EN pin is cycled. Do not float this pin or connect it to VIN.
10	20	IL	I/O	Current limiter control. Programmable using an external resistor to GND. Do not float this pin.
11	21	ILTIMER	I	Capacitor programmed fault timer control during current limiting mode. Connecting this pin to VIN uses the internal current limit timer and connecting this pin to GND disables the internal timer functionality for the ILTIMER as well as retry mode. In this case, the device will remain at programmed current limit indefinitely in the event of a short without going intro retry mode. Do not float this pin.
12	22	SS	I/O	Switch slew rate control. See the Section 8.3.2 section for more information.
13-16	23-32	VOUT	O	Switch output. A minimum 10-µF output capacitor is recommended.
	14,16,17,19	NC	—	No connect. This pin is not internally connected. It is recommended to connect these pins to GND to prevent charge buildup; however, these pins can also be left open or tied to any voltage between GND and VIN.
	—	Thermal Pad	—	Thermal pad (exposed center pad) for heat dissipation purposes. Thermal pad is internally connected to seal ring and GND.

(1) I = Input, O = Output, I/O = Input or Output, — = Other

(2) Thermal pad is internally connected to the seal ring and GND for HKR option.

Table 5-2 Bare Die Information

DIE THICKNESS	BACKSIDE FINISH	BACKSIDE POTENTIAL	BOND PAD METALLIZATION COMPOSITION	BOND PAD THICKNESS
15 mils	Silicon with backgrind	Ground	ALCU	1050 nm

All dimensions in microns (μm).
The inner rectangle is the die and the outer rectangle is the die plus scribe lines.

Table 5-3 Bond Pad Coordinates in Microns

DESCRIPTION	PAD NUMBER	X MIN	Y MIN	X MAX	Y MAX
VIN	1	611.78	4976.1	751.73	5116.05
VIN	2	258.17	4976.1	398.12	5116.05
VIN	3	258.17	4809.15	398.12	4949.1
VIN	4	611.78	4809.15	751.73	4949.1
VIN	5	258.17	4641.39	398.12	4781.34
VIN	6	611.78	4641.39	751.73	4781.34
VIN	7	258.17	4473.59	398.12	4613.54
VIN	8	611.78	4473.59	751.73	4613.54
VIN	9	258.17	3647.7	398.12	3787.65
VIN	10	611.78	3647.7	751.73	3787.65
VIN	11	258.17	3480.75	398.12	3620.7
VIN	12	611.78	3480.75	751.73	3620.7
VIN	13	258.17	3312.99	398.12	3452.94
VIN	14	611.78	3312.99	751.73	3452.94
VIN	15	258.17	3145.19	398.12	3285.14
VIN	16	611.78	3145.19	751.73	3285.14
VIN	17	258.17	2315.57	398.12	2455.52
VIN	18	611.78	2315.57	751.73	2455.52
VIN	19	258.17	2146.37	398.12	2286.32
VIN	20	611.78	2146.37	751.73	2286.36
AVDD	21	54.99	1842.03	194.94	1981.98
AVDD	22	54.99	1671.48	194.94	1811.43
CS	23	54.99	1480.77	194.94	1620.72
EN	24	54.99	972.68	194.94	1112.63
OVP	25	54.99	406.26	194.94	546.21
GND	26	407.21	54.99	547.16	194.94
GND	27	577.76	54.99	717.71	194.94
RTIMER	28	2792.88	54.99	2932.83	194.94
IL	29	3315.06	587.43	3455.01	727.38
ILTIMER	30	3315.06	1099.26	3455.01	1239.21
SS	31	3315.06	1544.09	3455.01	1684.04
VOUT	32	3111.66	2146.37	3251.61	2286.32
VOUT	33	2758.05	2146.37	2898	2286.32
VOUT	34	3111.66	2315.57	3251.61	2455.52
VOUT	35	2758.05	2315.57	2898	2455.52
VOUT	36	3111.66	3145.19	3251.61	3285.14
VOUT	37	2758.05	3145.19	2898	3285.14
VOUT	38	3111.66	3312.99	3251.61	3452.94
VOUT	39	2758.05	3312.99	2898	3452.94
VOUT	40	3111.66	3480.75	3251.61	3620.7
VOUT	41	2758.05	3480.75	2898	3620.7
VOUT	42	3111.66	3647.7	3251.61	3787.65
VOUT	43	2758.05	3647.7	2898	3787.65
VOUT	44	3111.66	4473.59	3251.61	4613.54
VOUT	45	2758.05	4473.59	2898	4613.54
VOUT	46	3111.66	4641.39	3251.61	4781.34
VOUT	47	2758.05	4641.39	2898	4781.34
VOUT	48	3111.66	4809.15	3251.61	4949.1
VOUT	49	2758.05	4809.15	2898	4949.1
VOUT	50	3111.66	4976.1	3251.61	5116.05
VOUT	51	2758.05	4976.1	2898	5116.05