SCES204Q April   1999  – March 2017 SN74LVC2G125

PRODUCTION DATA.  

  1. Features
  2. Applications
  3. Description
  4. Revision History
  5. Pin Configuration and Functions
  6. Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: TA = -40°C to +85°C
    7. 6.7 Switching Characteristics: TA = -40°C to +125°C
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. Parameter Measurement Information
  8. Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Balanced High-Drive CMOS Push-Pull Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Clamp Diodes
      4. 8.3.4 Partial Power Down (Ioff)
      5. 8.3.5 Over-voltage Tolerant Inputs
    4. 8.4 Device Functional Modes
  9. Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curve
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 Receiving Notification of Documentation Updates
    3. 12.3 Community Resources
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

封装选项

请参考 PDF 数据表获取器件具体的封装图。

机械数据 (封装 | 引脚)
  • DCU|8
  • YZP|8
  • DCT|8
散热焊盘机械数据 (封装 | 引脚)
订购信息

Features

  • ESD Protection Exceeds JESD 22
    • 2000-V Human-Body Model
    • 1000-V Charged-Device Model
  • Available in the Texas Instruments
    NanoFree™ Package
  • Supports 5-V VCC Operation
  • Inputs Accept Voltages to 5.5 V
  • Max tpd of 4.3 ns at 3.3 V
  • Low Power Consumption, 10-µA Max ICC
  • ±24-mA Output Drive at 3.3 V
  • Typical VOLP (Output Ground Bounce)
    < 0.8 V at VCC = 3.3 V, TA = 25°C
  • Typical VOHV (Output VOH Undershoot)
    > 2 V at VCC = 3.3 V, TA = 25°C
  • Ioff Supports Live Insertion, Partial-Power-Down Mode, and Back-Drive Protection
  • Can Be Used as a Down Translator to Translate Inputs From a Max of 5.5 V Down
    to the VCC Level
  • Latch-Up Performance Exceeds 100 mA Per
    JESD 78, Class II

Applications

  • Cable Modem Termination Systems
  • High-Speed Data Acquisition and Generation
  • Military: Radars and Sonars
  • Motor Controls: High-Voltage
  • Power Line Communication Modems
  • SSDs: Internal or External
  • Video Broadcasting and Infrastructure: Scalable Platforms
  • Video Broadcasting: IP-Based Multi-Format Transcoders
  • Video Communications Systems

Description

The SN74LVC2G125 device is a dual bus buffer gate, designed for 1.65-V to 5.5-V VCC operation. This device features dual line drivers with 3-state outputs. The outputs are disabled when the associated output-enable (OE) input is high.

NanoFree™ package technology is a major breakthrough in IC packaging concepts, using the die as the package.

To ensure the high-impedance state during power up or power down, OE should be tied to VCC through a pullup resistor; the minimum value of the resistor is determined by the current-sinking capability of the driver.

This device is fully specified for partial-power-down applications using Ioff. The Ioff circuitry disables the outputs, preventing damaging current backflow through the device when it is powered down.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE
SN74LVC2G125DCTR SM8 (8) 2.95 mm × 2.80 mm
SN74LVC2G125DCUR VSSOP (8) 2.30 mm × 2.00 mm
SN74LVC2G125YZPR DSBGA (8) 1.91 mm × 0.91 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

SN74LVC2G125 LD_CES204.gif