ZHCSKT9C January   2020  – March 2021 THP210

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Typical Characteristics
  7. 7 Parameter Measurement Information
    1. 7.1 Characterization Configuration
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 Super-Beta Input Bipolar Transistors
      2. 8.3.2 Power Down
      3. 8.3.3 Flexible Gain Setting
      4. 8.3.4 Amplifier Overload Power Limit
      5. 8.3.5 Unity Gain Stability
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
      1. 9.1.1 I/O Headroom Considerations
      2. 9.1.2 DC Precision Analysis
        1. 9.1.2.1 DC Error Voltage at Room Temperature
        2. 9.1.2.2 DC Error Voltage Over Temperature
      3. 9.1.3 Noise Analysis
      4. 9.1.4 Mismatch of External Feedback Network
      5. 9.1.5 Operating the Power-Down Feature
      6. 9.1.6 Driving Capacitive Loads
      7. 9.1.7 Driving Differential ADCs
        1. 9.1.7.1 RC Filter Selection (Charge Kickback Filter)
        2. 9.1.7.2 Settling Time Driving the ADC Sample-and-Hold Operating Behavior
        3. 9.1.7.3 THD Performance
    2. 9.2 Typical Applications
      1. 9.2.1 MFB Filter
        1. 9.2.1.1 Design Requirements
        2. 9.2.1.2 Detailed Design Procedure
        3. 9.2.1.3 Application Curve
      2. 9.2.2 ADS891x With Single-Ended RC Filter Stage
        1. 9.2.2.1 Design Requirements
          1. 9.2.2.1.1 Measurement Results
      3. 9.2.3 Attenuation Configuration Drives the ADS8912B
        1. 9.2.3.1 Design Requirements
          1. 9.2.3.1.1 Measurement Results
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
      1. 11.1.1 Board Layout Recommendations
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Development Support
    2. 12.2 Documentation Support
      1. 12.2.1 Related Documentation
    3. 12.3 接收文档更新通知
    4. 12.4 支持资源
    5. 12.5 Trademarks
    6. 12.6 静电放电警告
    7. 12.7 术语表
  13. 13Mechanical, Packaging, and Orderable Information

1 特性

  • 输入失调电压：±40µV（最大值）
  • 输入失调电压温漂：0.35µV/°C（最大值）
  • 低电源电流：±18V 下为 950µA
  • 低输入偏置电流：2nA（最大值）
  • 低输入偏置电流温漂：15pA/°C（最大值）
  • 增益带宽积：9.2MHz
  • 差分输出压摆率：15V/µs
  • 低输入电压噪声：1kHz 时为 3.7nV/√Hz
  • 低 THD + N：10kHz 时为 -120dB
  • 宽输入和输出共模范围
  • 宽单电源工作电压范围：3V 至 36V
  • 低电源电流断电特性：< 20µA
  • 过载功率限制
  • 电流限制
  • 封装：8 引脚 VSSOP，8 引脚 SOIC
  • 温度范围：–40°C 至 +125°C