LM5150-Q1 宽输入电压车用低 IQ 升压控制器

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1 特性

符合 AEC-Q100 标准：
- 器件温度等级 1：–40°C 至 +125°C 环境工作温度范围
- 器件 HBM ESD 分类等级 2
- 器件 CDM ESD 分类等级 C4B
提供功能安全
- 可帮助进行功能安全系统设计的文档
输出电压 ≥ 5V（绝对最大值为 65V）时具有 1.5V 至 42V 的宽输入电压范围
低关断电流 (I_Q ≤ 5µA)
低待机电流 (I_Q ≤ 15µA)
四种可编程输出电压选项和两种可选配置
- 6.8V、7.5V、8.5V 或 10.5V
- 启停或紧急呼叫配置
可调节开关频率范围：220 kHz 至 2.3 MHz
自动唤醒和待机模式转换
可选的时钟同步
升压状态指示器
1.5A 峰值 MOSFET 栅极驱动器
可调逐周期电流限制
热关断保护
16 引脚 WQFN，具有可湿性侧面和非可湿性侧面选项
使用 LM5150-Q1 并借助 WEBENCH® Power Designer 创建定制设计方案

2 应用

3 说明

LM5150-Q1 器件是宽输入范围自动升压控制器。该器件适合用作预升压转换器，在汽车启动期间维持汽车电池的输出电压，或在缺少汽车电池期间维持备用电池的输出电压。

可以通过一个电阻器在 220kHz 与 2.3MHz 之间对 LM5150-Q1 开关频率进行编程。快速开关频率 (≥ 2.2MHz) 可更大限度地降低调幅频带干扰，并支持实现小解决方案尺寸和快速瞬态响应。

LM5150-Q1 在输入或输出电压高于预设待机阈值时以低 I_Q 待机模式运行，并且在输出电压降至预设唤醒阈值以下时自动唤醒。

处于或未处于低 I_Q 待机模式的器件瞬态，可在轻负载下延长电池寿命。单个电阻器对目标输出稳定电压以及配置进行编程。其他特性包括低关断电流、升压状态指示器、可调逐周期电流限制和热关断。

器件信息

器件型号	封装⁽¹⁾	封装尺寸（标称值）
LM5150-Q1	WQFN (16)	4.00mm × 4.00mm

(1) 如需了解所有可用封装，请参阅数据表末尾的可订购产品附录。

典型应用电路

效率（V_LOAD= 6.8V，F_SW= 440kHz）

4 Revision History

Changes from Revision B (June 2020) to Revision C (October 2021)

添加了非可湿性侧面选项Go
更新了整个文档中的表格、图和交叉参考的编号格式Go
Added Section 5 Go

Changes from Revision A (February 2020) to Revision B (June 2020)

向Section 1 添加了功能安全要点Go

5 Device Comparison Table

PART NUMBER	PACKAGE OUTLINE	WETTABLE (WF)/NON-WETTABLE FLANKS (NON-WF)
LM5150QRUMRQ1	RUM0016C	WF
LM5150QRUMTQ1	RUM0016C	WF
LM5150QURUMRQ1	RUM0016F	Non-WF

6 Pin Configuration and Functions

Figure 6-1 16-Pin WQFNRUM Package(Top View)

Table 6-1 Pin Functions

PIN		I/O⁽³⁾	DESCRIPTION
NO.	NAME	I/O⁽³⁾	DESCRIPTION
1	SYNC	I	External synchronization clock input pin. The internal oscillator is synchronized to an external clock by applying a pulse signal into the SYNC pin in the start-stop configuration. Connect directly to ground if not used or in emergency call configuration. Maximum duty cycle limit can be programmed by controlling the external synchronization clock frequency.
2	STATUS	O	Status indicator with an open-drain output stage. Internal pulldown switch holds the pin low when the device is not boosting. The pin can be left floating if not used.
3	EN	I	Enable pin. If EN is below 1 V, the device is in shutdown mode. The pin must be raised above 2 V to enable the device. Connect directly to VOUT pin for an automatic boost.
4	VOUT	I/P	Boost output voltage-sensing pin and input to VCC regulator. Connect to the output of the boost converter.
5	PVCC	O/P	Output of the VCC bias regulator. Decouple locally to PGND using a low-ESR or low-ESL ceramic capacitor located as close to the device as possible.
6	NC	—	No internal electrical connection. Leave the pin floating or connect directly to ground.
7	AVCC	I/P	Analog VCC supply input. Decouple locally to AGND using 0.1-µF low-ESR or low-ESL ceramic capacitor located as close to the device as possible. Connect to the PVCC pin through 10-Ω resistor.
8	NC	—	No internal electrical connection. Leave the pin floating or connect directly to ground.
9	LO	O	N-channel MOSFET gate drive output. Connect to the gate of the N-channel MOSFET through a short, low inductance path.
10	PGND	G	Power ground pin. Connect to the ground connection of the sense resistor through a wide and short path.
11	AGND	G	Analog ground pin. Connect to the analog ground plane through a wide and short path.
12	CS	I	Current sense input pin. Connect to the positive side of the current sense resistor through a short path.
13	COMP	O	Output of the internal transconductance error amplifier. The loop compensation components must be connected between this pin and AGND.
14	RT	I	Switching frequency setting pin. The switching frequency is programmed by a single resistor between RT and AGND.
15	VSET	I	Configuration selection and VOUT regulation target programming pin. During initial power on, a resistor between the VSET pin and AGND configures the VOUT regulation target and the configuration.
16	VIN	I	Boost input voltage sensing pin. Connect to the input supply of the boost converter.
—	EP	—	Exposed pad of the package. No internal electrical connection to silicon die. The EP is electrically connected to anchor pads. The EP must be connected to the large ground copper plain to reduce thermal resistance.
—	AP	—	Anchor pad of the package. No internal electrical connection to silicon die. The AP is electrically connected to the EP. The AP can be left floating or soldered to the ground copper.

(3) G = Ground, I = Input, O = Output, P = Power