ZHCSQX3M March   2002  – August 2022 SN74AUC1G125

PRODUCTION DATA  

  1. 1 特性
  2. 2 应用
  3. 3 说明
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics: CL = 15 pF
    7. 6.7 Switching Characteristics: CL = 30 pF
    8. 6.8 Operating Characteristics
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
      1. 8.3.1 ULTTL CMOS Outputs
      2. 8.3.2 Standard CMOS Inputs
      3. 8.3.3 Partial Power Down (Ioff)
      4. 8.3.4 Clamp Diode Structure
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Documentation Support
      1. 12.1.1 Related Documentation
    2. 12.2 接收文档更新通知
    3. 12.3 支持资源
    4. 12.4 Trademarks
    5. 12.5 Electrostatic Discharge Caution
    6. 12.6 术语表
  13. 13Mechanical, Packaging, and Orderable Information

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1 特性

  • 针对 1.8V 运行进行了优化
  • 1.8V 下的输出驱动为 ±8mA
  • 电压为 1.8V 且负载为 30pF 时的最大 tpd 为 2.5ns
  • 0.8V 至 2.7V 的宽工作电压范围
  • 耐过压 I/O 支持高达 3.6V 的电压（独立于 VCC）
  • 采用德州仪器 (TI) NanoFree™ 封装
  • Ioff 特性支持局部关断模式和后驱动保护
  • 低功耗，ICC 最大值为 10µA
  • 闩锁性能超过 100 mA，符合 JESD 78 II 类规范