TPD4S012 4-Channel ESD Solution for USB-HS/USB OTG/USB Charger Interface

1 Features

Integrated ESD Clamps on all Pins
USB Signal Pins (D+, D–, ID)
- 0.8-pF Line Capacitance
Supports Data Rates in Excess of 480 Mbps
IEC 61000-4-2 ESD Protection (Level 4 Contact)
- ±10-kV IEC 61000-4-2 Contact Discharge
IEC 61000-4-5 Surge
- 3 Amps Peak Pulse Current

2 Applications

Cellular Phones
Digital Cameras
Global Positioning Systems (GPS)
Portable Digital Assistants (PDA)
Portable Computers

3 Description

The TPD4S012 is a four-channel Transient Voltage Suppressor (TVS) based Electrostatic Discharge (ESD) protection diode array for USB chargers and USB On-The-Go (OTG) interfaces.

The TPD4S012 provides IEC 61000-4-2 system level ESD Protection featuring 15 V tolerance on the V_BUS line. The device is ideal for providing circuit protection for USB charger and OTG applications due to its high-voltage tolerance at the V_BUS line and small flow-through package.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
TPD4S012	SON (6)	1.45 mm x 1.00 mm

For all available packages, see the orderable addendum at the end of the datasheet.

Typical Application Schematic

4 Revision History

Changes from A Revision (November 2009) to B Revision

Added Handling Rating table, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section Go

5 Pin Configurations and Functions

N.C. – Not internally connected

D+, D–, and ID pins are exact equivalent ESD clamp circuits. Any of these pins can be connected to any other D+, D–, or ID pin if it becomes easier to route the traces from the USB connector.

Pin Functions

PIN		TYPE	DESCRIPTION
DRY PIN NO.	NAME	TYPE	DESCRIPTION
1	D+	ESD clamp	Provides ESD protection to the high-speed differential data lines
2	D–	ESD clamp	Provides ESD protection to the high-speed differential data lines
3	ID	ESD clamp	Provides ESD protection to the high-speed differential data lines
4	GND	PWR	Ground
5	N.C.	–	Not internally connected
6	V_BUS	ESD clamp	ESD clamp for high-voltage tolerant V_BUS line(s)

6 Specifications

6.1 Absolute Maximum Ratings

Over operating free-air temperature range (unless otherwise noted)

PARAMETER			MIN	MAX	UNIT
	V_BUS voltage tolerance	V_BUS pin	–0.3	20	V
	IO voltage tolerance	D+, D–, ID pins	–0.3	6	V
T_A	Operating free-air temperature range		–40	85	°C
	IEC 61000-4-2 Contact Discharge	D+, D–, ID		±10	kV
	IEC 61000-4-2 Contact Discharge	V_BUS pin		±10	kV
	IEC 61000-4-2 Air-Gap Discharge	D+, D–, ID		±10	kV
	IEC 61000-4-2 Air-Gap Discharge	V_BUS pin		±9	kV
	IEC 61000-4-5 Surge (t_p = 8/20 μs)	Peak pulse Power (All pins)		60	W
	IEC 61000-4-5 Surge (t_p = 8/20 μs)	Peak pulse current (All Pins)		3	A

6.2 Handling Ratings

			MIN	MAX	UNIT
T_stg	Storage temperature range		–65	125	°C
V_(ESD)	Electrostatic discharge	Human body model (HBM), per ANSI/ESDA/JEDEC JS-001, all pins⁽¹⁾	–2.5	2.5	kV
V_(ESD)	Electrostatic discharge	Charged device model (CDM), per JEDEC specification JESD22-C101, all pins⁽²⁾	–1	1	kV

(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)

PARAMETER		MIN	MAX	UNIT
T_A Operating free-air Temperature Range		–40	85	°C
Operating Voltage	V_BUS Pin	0	15	V
Operating Voltage	D+, D–, ID Pins	0	5.5	V

6.4 Thermal Information

THERMAL METRIC⁽¹⁾		TPD4S012	UNIT
		DRY
		6 PINS
R_θJA	Junction-to-ambient thermal resistance	461.3	°C/W
R_θJC(top)	Junction-to-case (top) thermal resistance	219.6
R_θJB	Junction-to-board thermal resistance	343.7
ψ_JT	Junction-to-top characterization parameter	162.5
ψ_JB	Junction-to-board characterization parameter	343.7

(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics

over operating free-air temperature range (unless otherwise noted)

PARAMETER		TEST CONDITIONS		MIN	TYP	MAX	UNIT
I_VBUS	V_BUS operating current	V_BUS = 19 V	D+, D–, ID pins open		0.1	0.5	μA
I_IO	IO port current	V_IO= 2.5 V, V_BUS = 5 V	D+, D–, ID pins		0.1	0.5	μA
V_D	Diode forward voltage	I_IO = 8 mA	D+, D–, ID pins (lower clamp diode)	0.6	0.8	0.95	V
C_VBUS	V_BUS pin capacitance	V_BUS = 5 V			11	15	pF
C_IO	IO capacitance	V_IO = 2.5 V	D+, D–, ID pins		0.8	1	pF
R_DYN	Dynamic resistance	I_IO = 1.5 A	D+, D–, ID, and V_BUS pins, including central clamp dioded during positive ESD pulse		1.2		Ω
R_DYN	Dynamic resistance	I_IO = 1 A	D+, D–, ID, and V_BUS pins, including central clamp diode during negative ESD pulse		1		Ω
V_BR	Breakdown voltage	I_IO = 1 mA	D+, D–, ID pins	6	9		V
V_BR	Breakdown voltage	I_IO = 1 mA	V_BUS pin(s)	20	24		V