SLPS537 March 2015 CSD13306W
PRODUCTION DATA.
Refer to the PDF data sheet for device specific package drawings
This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1.5 mm outline with excellent thermal characteristics and an ultra low profile.
TA = 25°C | TYPICAL VALUE | UNIT | ||
---|---|---|---|---|
VDS | Drain-to-Source Voltage | 12 | V | |
Qg | Gate Charge Total (4.5 V) | 8.6 | nC | |
Qgd | Gate Charge Gate-to-Drain | 3.0 | nC | |
RDS(on) | Drain-to-Source On-Resistance | VGS = 2.5 V | 12.9 | mΩ |
VGS = 4.5 V | 8.8 | mΩ | ||
VGS(th) | Voltage Threshold | 1.0 | V |
Device | Qty | Media | Package | Ship |
---|---|---|---|---|
CSD13306W | 3000 | 7-Inch Reel | 1.0 mm × 1.5 mm Wafer Level Package | Tape and Reel |
CSD13306WT | 250 | 7-Inch Reel |
TA = 25°C | VALUE | UNIT | |
---|---|---|---|
VDS | Drain-to-Source Voltage | 12 | V |
VGS | Gate-to-Source Voltage | ±10 | V |
ID | Continuous Drain Current(1) | 3.5 | A |
IDM | Pulsed Drain Current (2) | 44 | A |
PD | Power Dissipation(3) | 1.9 | W |
Tstg | Storage Temperature Range | –55 to 150 | °C |
TJ | Operating Junction Temperature Range |
RDS(on) vs VGS |
Gate Charge |