SLPS432C November   2012  – January 2015 CSD16556Q5B

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q5B Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q5B Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNK|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Extremely Low Resistance
  • Ultralow Qg and Qgd
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb Free Terminal Plating
  • RoHS Compliant
  • Halogen Free
  • SON 5-mm × 6-mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck in Networking, Telecom, and Computing Systems
  • Optimized for Synchronous FET Applications

3 Description

This 25 V, 0.9 mΩ, 5 × 6 mm SON NexFET™ power MOSFET is designed to minimize losses in synchronous rectification and other power conversion applications.

Top View
P0093-01_LPS198.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 25 V
Qg Gate Charge Total (4.5 V) 36 nC
Qgd Gate Charge Gate-to-Drain 12 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 1.2 mΩ
VGS = 10 V 0.9 mΩ
VGS(th) Threshold Voltage 1.4 V


Ordering Information(1)

Device Media Qty Package Ship
CSD16556Q5B 13-Inch Reel 2500 SON 5 x 6 mm Plastic Package Tape and Reel
CSD16556Q5BT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 25 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 100 A
Continuous Drain Current (Silicon limited), TC = 25°C 263
Continuous Drain Current(1) 40 A
IDM Pulsed Drain Current(2) 400 A
PD Power Dissipation(1) 3.2 W
Power Dissipation, TC = 25°C 191
TJ,
Tstg		 Operating Junction and
Storage Temperature Range		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 103 A, L = 0.1 mH, RG = 25 Ω		 530 mJ
  1. Typical RθJA = 40°C/W on 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick FR4 PCB.
  2. Max RθJC = 1.3°C/W, Pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

graph07_SLPS431.png

Gate Charge

graph04_SLPS431.png