CSD16570Q5B 25-V N-Channel NexFET Power MOSFET

1 Features

Extremely Low Resistance
Low Q_g and Q_gd
Low Thermal Resistance
Avalanche Rated
Pb Free Terminal Plating
RoHS Compliant
Halogen Free
SON 5-mm × 6-mm Plastic Package

2 Applications

ORing and Hot Swap Applications

3 Description

This 25 V, 0.49 mΩ, SON 5 × 6 mm NexFET™ power MOSFET is designed to minimize resistance for ORing and hot swap applications and is not designed for switching applications.

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Product Summary

T_A = 25°C		TYPICAL VALUE		UNIT
V_DS	Drain-to-Source Voltage	25		V
Q_g	Gate Charge Total (4.5 V)	95		nC
Q_gd	Gate Charge Gate-to-Drain	31		nC
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V	0.68	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V	0.49	mΩ
V_GS(th)	Threshold Voltage	1.5		V

Ordering Information⁽¹⁾

Device	Qty	Media	Package	Ship
CSD16570Q5B	2500	13-Inch Reel	SON 5 × 6 mm Plastic Package	Tape and Reel
CSD16570Q5BT	250	7-Inch Reel	SON 5 × 6 mm Plastic Package	Tape and Reel

For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

T_A = 25°C		VALUE	UNIT
V_DS	Drain-to-Source Voltage	25	V
V_GS	Gate-to-Source Voltage	±20	V
I_D	Continuous Drain Current (Package limited)	100	A
	Continuous Drain Current (Silicon limited), T_C = 25°C	456
	Continuous Drain Current⁽¹⁾	59
I_DM	Pulsed Drain Current⁽²⁾	400	A
P_D	Power Dissipation⁽¹⁾	3.2	W
P_D	Power Dissipation, T_C = 25°C	195	W
T_J, T_stg	Operating Junction and Storage Temperature Range	–55 to 150	°C
E_AS	Avalanche Energy, single pulse I_D = 98 A, L = 0.1 mH, R_G = 25 Ω	480	mJ

Typical R_θJA = 40°C/W on a 1-inch² , 2-oz. Cu pad on a
0.06-inch thick FR4 PCB.
Max R_θJC = 0.8°C/W, Pulse duration ≤ 100 μs, duty cycle ≤1%

R_DS(on) vs V_GS

Gate Charge

CSD16570Q5B graph04_frontpage_SLPS496.png

4 Revision History

Changes from * Revision (July 2014) to A Revision

Added the Receiving Notification of Documentation Updates and Community Resource sections to Device and Documentation Support. Go
Changed the dimension between pads 3 and 4 from 0.028 inches: to 0.050 inches in the Recommended PCB Pattern section diagramGo

5 Specifications

5.1 Electrical Characteristics

(T_A = 25°C unless otherwise stated)

PARAMETER		TEST CONDITIONS	MIN	TYP	MAX	UNIT
STATIC CHARACTERISTICS
BV_DSS	Drain-to-Source Voltage	V_GS = 0 V, I_D = 250 μA	25			V
I_DSS	Drain-to-Source Leakage Current	V_GS = 0 V, V_DS = 20 V			1	μA
I_GSS	Gate-to-Source Leakage Current	V_DS = 0 V, V_GS = 20 V			100	nA
V_GS(th)	Gate-to-Source Threshold Voltage	V_DS = V_GS, I_D = 250 μA	1.1	1.5	1.9	V
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 4.5 V, I_D = 50 A		0.68	0.82	mΩ
R_DS(on)	Drain-to-Source On-Resistance	V_GS = 10 V, I_D = 50 A		0.49	0.59	mΩ
g_fs	Transconductance	V_DS = 2.5 V, I_D = 50 A		278		S
DYNAMIC CHARACTERISTICS
C_iss	Input Capacitance	V_GS = 0 V, V_DS = 12 V, ƒ = 1 MHz		10700	14000	pF
C_oss	Output Capacitance			1660	2160	pF
C_rss	Reverse Transfer Capacitance			996	1290	pF
R_G	Series Gate Resistance			1.8	3.6	Ω
Q_g	Gate Charge Total (4.5 V)	V_DS = 12.5 V, I_D = 50 A		95	124	nC
Q_g	Gate Charge Total (10 V)			192	250	nC
Q_gd	Gate Charge Gate-to-Drain			31		nC
Q_gs	Gate Charge Gate-to-Source			29		nC
Q_g(th)	Gate Charge at V_th			15		nC
Q_oss	Output Charge	V_DS = 12.5 V, V_GS = 0 V		35		nC
t_d(on)	Turn On Delay Time	V_DS = 12.5 V, V_GS = 10 V, I_DS = 50 A, R_G = 0 Ω		5		ns
t_r	Rise Time			43		ns
t_d(off)	Turn Off Delay Time			156		ns
t_f	Fall Time			72		ns
DIODE CHARACTERISTICS
V_SD	Diode Forward Voltage	I_SD = 50 A, V_GS = 0 V		0.8	1	V
Q_rr	Reverse Recovery Charge	V_DS= 12.5 V, I_F = 50 A, di/dt = 300A/μs		34		nC
t_rr	Reverse Recovery Time	V_DS= 12.5 V, I_F = 50 A, di/dt = 300A/μs		21		ns

5.2 Thermal Information

(T_A = 25°C unless otherwise stated)

THERMAL METRIC		MIN	TYP	MAX	UNIT
R_θJC	Junction-to-Case Thermal Resistance⁽¹⁾			0.8	°C/W
R_θJA	Junction-to-Ambient Thermal Resistance⁽¹⁾⁽²⁾			50	°C/W

(1) R_θJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inches × 1.5-inches
(3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. R_θJC is specified by design, whereas R_θJA is determined by the user’s board design.

(2) Device mounted on FR4 material with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu.