SLPS527A September   2014  – January 2016 CSD17579Q3A

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Community Resources
    2. 6.2 Trademarks
    3. 6.3 Electrostatic Discharge Caution
    4. 6.4 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q3A Package Dimensions
    2. 7.2 Q3A Recommended PCB Pattern
    3. 7.3 Q3A Recommended Stencil Pattern
    4. 7.4 Q3A Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DNH|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Low Qg and Qgd
  • Low RDS(on)
  • Low Thermal Resistance
  • Avalanche Rated
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 3.3 mm × 3.3 mm Plastic Package

2 Applications

  • Point-of-Load Synchronous Buck Converter for Applications in Networking, Telecom, and Computing Systems
  • Optimized for Control FET Applications

3 Description

This 30 V, 8.7 mΩ, SON 3.3 mm × 3.3 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.

Top View
CSD17579Q3A P0093-01_LPS198.gif

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Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 5.3 nC
Qgd Gate Charge Gate-to-Drain 1.2 nC
RDS(on) Drain-to-Source On-Resistance VGS = 4.5 V 11.8 mΩ
VGS = 10 V 8.7 mΩ
VGS(th) Threshold Voltage 1.5 V

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Ordering Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD17579Q3A 13-Inch Reel 2500 SON 3.3 × 3.3 mm
Plastic Package		 Tape and Reel
CSD17579Q3AT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
ID Continuous Drain Current (Package limited) 20 A
Continuous Drain Current (Silicon limited), TC = 25°C 39
Continuous Drain Current(1) 11
IDM Pulsed Drain Current(2) 106 A
PD Power Dissipation(1) 2.5 W
Power Dissipation, TC = 25°C 29
TJ,
Tstg 		Operating Junction Temperature,
Storage Temperature		 –55 to 150 °C
EAS Avalanche Energy, single pulse
ID = 17 A, L = 0.1 mH, RG = 25 Ω		 14 mJ
  1. Typical RθJA = 50°C/W on a 1 inch2, 2 oz. Cu pad on a 0.06 inch thick FR4 PCB.
  2. Max RθJC = 5.4 °C/W, pulse duration ≤100 μs, duty cycle ≤1%

RDS(on) vs VGS

CSD17579Q3A D007_SLPS527.gif

Gate Charge

CSD17579Q3A D004_SLPS527_frontpage.gif