SLPS689 May   2017 CSD22206W

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 CSD22206W Package Dimensions
    2. 7.2 Recommended Land Pattern

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YZF|9
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Resistance
  • Small Footprint 1.5 mm × 1.5 mm
  • Lead Free
  • Gate ESD Protection
  • RoHS Compliant
  • Halogen Free
  • Gate-Source Voltage Clamp

2 Applications

  • Load Switch Applications
  • Battery Management
  • Battery Protection

3 Description

This –8-V, 4.7-mΩ, 1.5-mm × 1.5-mm device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Low on resistance coupled with the small footprint and low profile make the device ideal for battery operated space constrained applications.

Top View and Circuit Configuration
CSD22206W Pin_Map_and_Circuit_Configuration_P3.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –8 V
Qg Gate Charge Total (–4.5 V) 11.2 nC
Qgd Gate Charge Gate-to-Drain 1.8 nC
RDS(on) Drain-to-Source On Resistance VGS = –2.5 V 6.8 mΩ
VGS = –4.5 V 4.7
VGS(th) Threshold Voltage –0.7 V

Device Information

DEVICE QTY MEDIA PACKAGE SHIP
CSD22206W 3000 7-Inch Reel 1.50-mm × 1.50-mm
Wafer BGA Package		 Tape and Reel
CSD22206WT 250

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –8 V
VGS Gate-to-Source Voltage –6 V
ID Continuous Drain Current(1) –5 A
Pulsed Drain Current(2) –108 A
PD Power Dissipation 1.7 W
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
  1. Device operating at a temperature of 105°C.
  2. Typ RθJA = 75°C/W ,mounted on FR4 material with maximum Cu mounting area, pulse width ≤ 100 μs, duty cycle ≤ 1%.

RDS(on) vs VGS

CSD22206W D007_SLPS636.gif

Gate Charge

CSD22206W D004_SLPS636_FP.gif