DATA SHEET
CSD25484F4 –20-V P-Channel FemtoFET MOSFET
1 Features
- Low on-resistance
- Ultra-low Qg and Qgd
- Low-threshold voltage
- Ultra-small footprint (0402 case size)
- 1.0 mm × 0.6 mm
- Ultra-low profile
- 0.2-mm height
- Integrated ESD protection diode
- Rated > 4-kV HBM
- Rated > 2-kV CDM
- Lead and halogen free
- RoHS compliant
2 Applications
- Optimized for load switch applications
- Optimized for general purpose switching applications
- Battery applications
- Handheld and mobile applications
3 Description
This 80-mΩ, –20-V, P-Channel FemtoFET™ MOSFET is designed and optimized to minimize the footprint in many handheld and mobile applications. This technology is capable of replacing standard small signal MOSFETs while providing at least a 60% reduction in footprint size.
Figure 3-1 Typical Package DimensionsProduct Summary
| TA = 25°C | TYPICAL VALUE | UNIT | ||
|---|---|---|---|---|
| VDS | Drain-to-source voltage | –20 | V | |
| Qg | Gate charge total (–4.5 V) | 1090 | pC | |
| Qgd | Gate charge gate-to-drain | 150 | pC | |
| RDS(on) | Drain-to-source
on-resistance | VGS = –1.8 V | 405 | mΩ |
| VGS = –2.5 V | 150 | |||
| VGS = –4.5 V | 93 | |||
| VGS = –8.0 V | 80 | |||
| VGS(th) | Threshold voltage | –0.95 | V | |
Device
Information
| DEVICE | QTY | MEDIA | PACKAGE(1) | SHIP |
|---|---|---|---|---|
| CSD25484F4 | 3000 | 7-Inch Reel | Femto (0402) 1.00-mm × 0.60-mm Land Grid Array (LGA) | Tape and Reel |
| CSD25484F4T | 250 |
(1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings
| TA = 25°C | VALUE | UNIT | |
|---|---|---|---|
| VDS | Drain-to-source voltage | –20 | V |
| VGS | Gate-to-source voltage | –12 | V |
| ID | Continuous drain current(1) | –2.5 | A |
| IDM | Pulsed drain current(1)(2) | –22 | A |
| IG | Continuous gate clamp current | –35 | mA |
| Pulsed gate clamp current(2) | –350 | ||
| PD | Power dissipation(1) | 500 | mW |
| V(ESD) | Human-body model (HBM) | 4 | kV |
| Charged-device model (CDM) | 2 | ||
| TJ, Tstg | Operating junction, storage temperature | –55 to 150 | °C |
(1) Typical RθJA = 85°C/W on 1-in2 (6.45-cm2), 2-oz
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(0.071-mm) thick Cu pad on a 0.06-in (1.52-mm) thick FR4 PCB.
(2) Pulse duration ≤ 100 μs, duty cycle ≤ 1%.
Figure 3-2 Top View
4 Revision History
Changes from Revision A (August 2017) to Revision B (February 2022)
- Updated the numbering format for tables, figures, and cross-references throughout the documentGo
- Added FemtoFET Surface Mount Guide note.Go
Changes from Revision * (May 2015) to Revision A (August 2017)
- Added the Section 6.1 and the Section 6 sectionGo
- Updated the Section 7.2 and the Section 7.3 sectionsGo
5 Specifications
5.1 Electrical Characteristics
TA = 25°C (unless otherwise stated)
| PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
|---|---|---|---|---|---|---|---|
| STATIC CHARACTERISTICS | |||||||
| BVDSS | Drain-to-source voltage | VGS = 0 V, IDS = –250 μA | –20 | V | |||
| IDSS | Drain-to-source leakage current | VGS = 0 V, VDS = –16 V | –100 | nA | |||
| IGSS | Gate-to-source leakage current | VDS = 0 V, VGS = –12 V | –50 | nA | |||
| VGS(th) | Gate-to-source threshold voltage | VDS = VGS, IDS = –250 μA | –0.7 | –0.95 | –1.2 | V | |
| RDS(on) | Drain-to-source on-resistance | VGS = –1.8 V, IDS = –0.1 A | 405 | 825 | mΩ | ||
| VGS = –2.5 V, IDS = –0.5 A | 150 | 180 | |||||
| VGS = –4.5 V, IDS = –0.5 A | 93 | 109 | |||||
| VGS = –8 V, IDS = –0.5 A | 80 | 94 | |||||
| gfs | Transconductance | VDS = –10 V, IDS = –0.5 A | 3.5 | S | |||
| DYNAMIC CHARACTERISTICS | |||||||
| Ciss | Input capacitance | VGS = 0 V, VDS = –10 V, ƒ = 1 MHz | 175 | 230 | pF | ||
| Coss | Output capacitance | 78 | 102 | pF | |||
| Crss | Reverse transfer capacitance | 5.5 | 7.2 | pF | |||
| RG | Series gate resistance | 20 | Ω | ||||
| Qg | Gate charge total (–4.5 V) | VDS = –10 V, IDS = –0.5 A | 1090 | 1415 | pC | ||
| Qgd | Gate charge gate-to-drain | 150 | pC | ||||
| Qgs | Gate charge gate-to-source | 350 | pC | ||||
| Qg(th) | Gate charge at Vth | 210 | pC | ||||
| Qoss | Output charge | VDS = –10 V, VGS = 0 V | 1290 | pC | |||
| td(on) | Turnon delay time | VDS = –10 V, VGS = –4.5 V, IDS = –0.5 A, RG = 10 Ω | 9.5 | ns | |||
| tr | Rise time | 5 | ns | ||||
| td(off) | Turnoff delay time | 18 | ns | ||||
| tf | Fall Time | 8.5 | ns | ||||
| DIODE CHARACTERISTICS | |||||||
| VSD | Diode forward voltage | ISD = –0.5 A, VGS = 0 V | –0.75 | V | |||
| Qrr | Reverse recovery charge | VDS= –10 V, IF = –0.5 A, di/dt = 100 A/μs | 970 | pC | |||
| trr | Reverse recovery time | 7.5 | ns | ||||
5.2 Thermal Information
TA = 25°C (unless otherwise stated)
| THERMAL METRIC | TYPICAL VALUES | UNIT | |||
|---|---|---|---|---|---|
| RθJA | Junction-to-ambient thermal resistance(1) | 85 | °C/W | ||
| Junction-to-ambient thermal resistance(2) | 245 | ||||
(1) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm) thick Cu.
(2) Device mounted on FR4 material with minimum Cu mounting area.