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  • CSD87501L 30-V Dual Common Drain N-Channel NexFET Power MOSFET

    • SLPS523B February   2015  – May 2019 CSD87501L

      PRODUCTION DATA.  

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  • CSD87501L 30-V Dual Common Drain N-Channel NexFET Power MOSFET
  1. 1Features
  2. 2Applications
  3. 3Description
    1.     Top View
    2.     Configuration
      1.      Device Images
        1.       RS1S2(on) vs VGS
        2.       Gate Charge
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Receiving Notification of Documentation Updates
    2. 6.2 Community Resources
    3. 6.3 Trademarks
    4. 6.4 Electrostatic Discharge Caution
    5. 6.5 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
  8. IMPORTANT NOTICE

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • YJG|10
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • slps523b_oa
  • slps523b_pm
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DATA SHEET

CSD87501L 30-V Dual Common Drain N-Channel NexFET Power MOSFET

1 Features

  • Low on-resistance
  • Small footprint of 3.37 mm × 1.47 mm
  • Ultra-low profile – 0.2-mm high
  • Lead free
  • RoHS compliant
  • Halogen free
  • Gate ESD protection

2 Applications

  • Battery management
  • Battery protection
  • USB Type-C / PD

3 Description

This 30-V, 6.6-mΩ, 3.37-mm × 1.47-mm LGA Dual NexFET™ power MOSFET is designed to minimize resistance and gate charge in a small footprint. Its small size and common drain configuration make the device ideal for multi-cell battery pack applications and small handheld devices.

Top View

CSD87501L Front_Page_r2.gif

Configuration

CSD87501L Configuration.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VS1S2 Source-to-Source Voltage 30 V
Qg Gate Charge Total (4.5 V) 15 nC
Qgd Gate Charge Gate-to-Drain 6.0 nC
RS1S2(on) Source-to-Source On-Resistance VGS = 4.5 V 9.3 mΩ
VGS = 10 V 6.6
VGS(th) Threshold Voltage 1.8 V

Device Information(1)

DEVICE MEDIA QTY PACKAGE SHIP
CSD87501L 7-Inch Reel 3000 3.37 mm × 1.47 mm
Land Grid Array
Package		 Tape
and
Reel
CSD87501LT 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VS1S2 Source-to-Source Voltage 30 V
VGS Gate-to-Source Voltage ±20 V
IS Continuous Source Current(1) 14 A
ISM Pulsed Source Current(2) 72 A
PD Power Dissipation 2.5 W
V(ESD) Human-Body Model (HBM) 2 kV
TJ,
Tstg 		Operating Junction,
Storage Temperature		 –55 to 150 °C
  1. Typical RθJA = 50°C/W on a 1-in2, 2-oz Cu pad on a 0.06-in thick FR4 PCB.
  2. Typical min Cu RθJA = 135°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.

Device Images



RS1S2(on) vs VGS

CSD87501L D007_SLPS523.gif


Gate Charge

CSD87501L D004_SLPS523_frontpage.gif

4 Revision History

Changes from A Revision (April 2015) to B Revision

  • Added Receiving Notification of Documentation Updates section and Community Resources sectionGo
  • Added Pin Configuration table in the Mechanical, Packaging, and Orderable Information sectionGo

Changes from * Revision (February 2015) to A Revision

  • Extended Y axis in Figure 9 down to 0.01 AGo

5 Specifications

5.1 Electrical Characteristics

TA = 25°C unless otherwise stated
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
STATIC CHARACTERISTICS
BVS1S2 Source-to-source voltage VGS = 0 V, IS = 250 μA 30 V
IS1S2 Source-to-source leakage current VGS = 0 V, VS1S2 = 24 V 1 μA
IGSS Gate-to-source leakage current VS1S2 = 0 V, VGS = 20 V 10 µA
VGS(th) Gate-to-source threshold voltage VS1S2 = VGS, IS = 250 μA 1.3 1.8 2.3 V
RS1S2(on) Source-to-source on-resistance VGS = 4.5 V, IS = 7 A 9.3 11.0 mΩ
VGS = 10 V, IS = 7 A 6.6 7.8
gfs Transconductance VS1S2 = 3 V, IS = 7 A 48 S
DYNAMIC CHARACTERISTICS(1)
Ciss Input capacitance VGS = 0 V, VS1S2 = 15 V, ƒ = 1 MHz 1620 2110 pF
Coss Output capacitance 189 246 pF
Crss Reverse transfer capacitance 152 198 pF
RG Series gate resistance 300 450 Ω
Qg Gate charge total (4.5 V) VS1S2 = 15 V, IS = 7 A 15 20 nC
Qg Gate charge total (10 V) 31 40 nC
Qgd Gate charge gate-to-drain 6.0 nC
Qgs Gate charge gate-to-source 5.0 nC
Qg(th) Gate charge at Vth 2.5 nC
Qoss Output charge VS1S2 = 15 V, VGS = 0 V 7.6 nC
td(on) Turn on delay time VS1S2 = 15 V, VGS = 10 V,
IS1S2 = 7 A, RG = 0 Ω		 164 ns
tr Rise time 260 ns
td(off) Turn off delay time 709 ns
tf Fall time 712 ns
(1) Dynamic characteristics values specified are per single FET.

5.2 Thermal Information

TA = 25°C unless otherwise stated
THERMAL METRIC MIN TYP MAX UNIT
RθJA Junction-to-ambient thermal resistance(1) 135 °C/W
Junction-to-ambient thermal resistance(2) 50
(1) Device mounted on FR4 material with minimum Cu mounting area.
(2) Device mounted on FR4 material with 1-in2 (6.45-cm2), 2-oz (0.071-mm thick) Cu.

5.3 Typical MOSFET Characteristics

TA = 25°C unless otherwise stated
CSD87501L D001_SLPS523_r2.png
Figure 1. Transient Thermal Impedance
CSD87501L D002_SLPS523.gif
Figure 2. Saturation Characteristics
CSD87501L D003_SLPS523.gif
VS1S2 = 15 V
Figure 3. Transfer Characteristics
CSD87501L D004_SLPS523.gif
IS = 7 A VS1S2 = 15 V
Figure 4. Gate Charge
CSD87501L D006_SLPS523.gif
IS = 250 µA
Figure 6. Threshold Voltage vs Temperature
CSD87501L D008_SLPS523.gif
IS = 7 A
Figure 8. Normalized On-State Resistance vs Temperature
CSD87501L D010_SLPS523.gif
Figure 10. Maximum Source Current vs Temperature
CSD87501L D005_SLPS523_r2.gif
Figure 5. Capacitance
CSD87501L D007_SLPS523.gif
Figure 7. On-State Source-to-Source Resistance vs
Gate-to-Source Voltage
CSD87501L D009_SLPS523_r4.gif
Single pulse, max RθJA = 135°C/W
Figure 9. Maximum Safe Operating Area

6 Device and Documentation Support

6.1 Receiving Notification of Documentation Updates

To receive notification of documentation updates, navigate to the device product folder on ti.com. In the upper right corner, click on Alert me to register and receive a weekly digest of any product information that has changed. For change details, review the revision history included in any revised document.

6.2 Community Resources

The following links connect to TI community resources. Linked contents are provided "AS IS" by the respective contributors. They do not constitute TI specifications and do not necessarily reflect TI's views; see TI's Terms of Use.

    TI E2E™ Online Community TI's Engineer-to-Engineer (E2E) Community. Created to foster collaboration among engineers. At e2e.ti.com, you can ask questions, share knowledge, explore ideas and help solve problems with fellow engineers.
    Design Support TI's Design Support Quickly find helpful E2E forums along with design support tools and contact information for technical support.

6.3 Trademarks

NexFET, E2E are registered trademarks of Texas Instruments.

All other trademarks are the property of their respective owners.

 
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