EMB1412 MOSFET Gate Driver

1 Features

Compound CMOS and Bipolar Outputs Reduce Output Current Variation
7 A Sink/3 A Source Current
Fast Propagation Times (25 ns Typical)
Fast Rise and Fall Times (14 ns/12 ns Rise/Fall with 2 nF Load)
Inverting and Non-Inverting Inputs Provide Either Configuration with a Single Device
Supply Rail Under-Voltage Lockout Protection
Dedicated Input Ground (IN_REF) for Split Supply or Single Supply Operation
Thermally Enhanced 8-Pin VSSOP Package
Output Swings from V_CC to V_EE Which can be Negative Relative to Input Ground

2 Applications

Li-Ion Battery Management Systems
Hybrid and Electric Vehicles
Grid Storage
48 V Systems Supply
UPS

3 Description

The EMB1412 MOSFET gate driver provides high peak gate drive current in 8-lead exposed-pad VSSOP package, with improved power dissipation required for high frequency operation. The compound output driver stage includes MOS and bipolar transistors operating in parallel that together sink more than 7-A peak from capacitive loads. Combining the unique characteristics of MOS and bipolar devices reduces drive current variation with voltage and temperature. Under-voltage lockout protection is provided to prevent damage to the MOSFET due to insufficient gate turn-on voltage. The EMB1412 provides both inverting and non-inverting inputs to satisfy requirements for inverting and non-inverting gate drive with a single device type.

Device Information⁽¹⁾

PART NUMBER	PACKAGE	BODY SIZE (NOM)
EMB1412	HVSSOP (8)	3.00 mm x 3.00 mm

For all available packages, see the orderable addendum at the end of the datasheet.

4 Revision History

Changes from A Revision (May 2013) to B Revision

Added Handling Ratings Table Go
Changed layout of National Data Sheet to TI format.Go