SNOAA79 June 2021 DAC121S101QML-SP , LMP7704-SP , TPS7A4501-SP
Design Goals
Parameter | Design Goal |
---|---|
Supply Voltage | Single Supply, 12V |
DAC Output Range | 0V–4.9V |
Current Sink Control Voltage | 0mV–500mV |
Output Current Range | 0mA–200mA |
Uncalibrated Accuracy | ±2% (±4mA) |
Calibrated Accuracy | ±1% (±2mA) |
Total Ionizing Dose (TID) | 100-krad(Si) |
Single Event Latch-up (SEL) Immunity | 85 MeV·cm2/mg |
Design Description
Voltage controlled current sinks are an integral part of many current-controlled space applications. One of its most popular applications is adjustable-current, laser diode drivers which are often used in laser communications systems (also known as optical inter-satellite links (OISL)). The circuit is also seen in other applications like LiDAR which might benefit from laser diodes. It consists of three main elements: the sense resistor (RSense), an N-channel MOSFET (Q1), and an operational amplifier (op amp) that controls the MOSFET.
The basic operating principle of the circuit starts with current flowing through the load from a voltage supply (in this case 5 V). As current flows through the load, a voltage is developed on RSense. The op amp uses the sensed voltage as feedback and drives its output until the sensed voltage is equal to the DAC output (non-inverting input). In this case, Q1 is operated in the linear region and serves as a voltage-controlled resistance. The components: Riso, CF, and RF are used to compensate the circuit and ensure stable operation.
Design Notes
Design Steps
Component Selection
DAC | Data Sheet Specification |
TUE T= 25°C |
Data Sheet Specification |
TUE ΔT = –55 to 125°C |
TUE + Gain Calibration ΔT = –55 to 125°C |
---|---|---|---|---|---|
INL (V) |
2.75 LSB |
3.357E-3 |
8.0 LSB |
9.766E-3 |
9.766E-3 |
DNL (V) |
0.21 LSB |
256.348E-6 |
1.0 LSB |
1.221E-3 |
1.221E-3 |
ZCE (V) |
4 mV |
4.000E-3 |
10 mV |
10.000E-3 |
10.000E-3 |
ZCE-Drift (V) |
–20 µV/°C |
–3.6E-3 |
–3.600E-3 |
||
GE (V) |
–0.11% |
5.500E-3 |
1.00% |
50.000E-3 |
1.221E-3 |
GE-Drift (V) |
–1 ppm/°C |
–900.0E-6 |
–900.000E-6 |
||
Volt. Ref. |
|||||
Initial Acc. (V) |
0.23% at IR<1mA |
11.500E-3 |
0.23% at IR<1mA |
11.500E-3 |
9.000E-6 |
ΔVR/ΔT (V) |
34 ppm/°C |
30.6E-3 |
30.600E-3 |
||
Op Amp |
|||||
VOS (V) |
±37 μV |
37.000E-6 |
±500 μV |
500.000E-6 |
500.000E-6 |
IBIAS (A) |
±200 fA |
200.000E-12 |
±400 pA |
400.000E-12 |
400.000E-12 |
IBIAS × R2 (V) |
300.000E-9 |
600.000E-9 |
600.000E-9 |
||
VOSDrift (V) |
±5 μV/°C |
900.000E-6 |
900.000E-6 |
||
Scaling Res. |
|||||
Resistor Div. |
898.674E-6 |
898.674E-6 |
898.674E-6 |
||
VCTRL RSS TUE (mV) |
1.669E-3 |
6.420E-3 |
3.718E-3 |
||
VCTRL RSS Error% |
0.334% |
1.284% |
0.744% |