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  • LMC606x Precision CMOS, Micropower Operational Amplifiers

    • SNOS631E November   1994  – March 2025 LMC6061 , LMC6062 , LMC6064

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  • LMC606x Precision CMOS, Micropower Operational Amplifiers
  1.   1
  2. 1Features
  3. 2Applications
  4. 3Description
  5. 4Pin Configuration and Functions
  6. 5Specifications
    1. 5.1 Absolute Maximum Ratings
    2. 5.2 ESD Ratings
    3. 5.3 Recommended Operating Conditions
    4. 5.4 Thermal Information: LMC6061
    5. 5.5 Thermal Information: LMC6062
    6. 5.6 Thermal Information: LMC6064
    7. 5.7 Electrical Characteristics
    8. 5.8 Typical Characteristics
  7. 6Application and Implementation
    1. 6.1 Applications Information
      1. 6.1.1 Amplifier Topology
      2. 6.1.2 Compensating For Input Capacitance
      3. 6.1.3 Capacitive Load Tolerance
      4. 6.1.4 Latchup
    2. 6.2 Typical Applications
      1. 6.2.1 Instrumentation Amplifier
      2. 6.2.2 Low-Leakage Sample-and-Hold
      3. 6.2.3 1Hz Square-Wave Oscillator
    3. 6.3 Layout
      1. 6.3.1 Layout Guidelines
        1. 6.3.1.1 Printed Circuit Board Layout For High Impedance Work
      2. 6.3.2 Layout Example
  8. 7Device and Documentation Support
    1. 7.1 Receiving Notification of Documentation Updates
    2. 7.2 Support Resources
    3. 7.3 Trademarks
    4. 7.4 Electrostatic Discharge Caution
    5. 7.5 Glossary
  9. 8Revision History
  10. 9Mechanical, Packaging, and Orderable Information
  11. IMPORTANT NOTICE

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|14
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • snos631e_oa
  • snos631e_pm
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Data Sheet

LMC606x Precision CMOS, Micropower Operational Amplifiers

1 Features

  • Typical values unless otherwise noted
  • Low offset voltage: 100μV
  • Ultra-low supply current: 16μA/amplifier
  • Supply range: 4.5V to 15V
  • Ultra-low input bias current: 10fA
  • Output swing within 10mV of supply rail, 100kΩ load
  • Input common-mode includes V−
  • High voltage gain: 140dB
  • Improved latchup immunity

2 Applications

  • Instrumentation amplifier
  • Photodiode and infrared detector preamplifier
  • Transducer amplifiers
  • Portable analytic instruments
  • Medical instrumentation
  • Digital-to-analog converter (DAC)
  • Charge amplifier for piezoelectric transducers

3 Description

The LMC6061, LMC6062, and LMC6064 (LMC606x) are precision, low-offset-voltage, micropower operational amplifiers (op amps), capable of precision single-supply operation. Performance characteristics include ultra-low input bias current, high voltage gain, rail-to-rail output swing, and an input common-mode voltage range that includes ground. These features, plus the low power consumption of the op amps, make the LMC606x an excellent choice for battery-powered applications.

Other applications using the LMC606x include precision full-wave rectifiers, integrators, references, sample-and-hold circuits, and true instrumentation amplifiers.

This device is built with TI's advanced double-poly silicon-gate CMOS process.

For designs that require higher speed, see the LMC608x precision operational amplifiers.

PATENT PENDING

Device Information
PART NUMBER CHANNEL COUNT PACKAGE(1)
LMC6061 Single D (SOIC, 8)
LMC6062 Dual D (SOIC, 8)
P (PDIP, 8)
LMC6064 Quad D (SOIC, 8)
(1) For more information, see Section 9.

 

LMC6061 LMC6062 LMC6064 Difference Amplifier Application With RES11A Difference Amplifier Application With RES11A

4 Pin Configuration and Functions

LMC6061 LMC6062 LMC6064 LMC6061: D Package, 8-Pin SOIC (Top View) Figure 4-1 LMC6061: D Package, 8-Pin SOIC (Top View)
Table 4-1 Pin Functions: LMC6061
PIN TYPE DESCRIPTION
NAME NO.
–IN 2 Input Inverting input
+IN 3 Input Noninverting input
NC 1, 8, 5 _ No connection (can be left floating)
OUT 6 Output Output
V– 4 Power Negative (lowest) power supply
V+ 7 Power Positive (highest) power supply
LMC6061 LMC6062 LMC6064 LMC6062: D Package, 8-Pin SOIC and P Package, 8-Pin PDIP (Top View) Figure 4-2 LMC6062: D Package, 8-Pin SOIC and P Package, 8-Pin PDIP (Top View)
Table 4-2 Pin Functions: LMC6062
PIN TYPE DESCRIPTION
NAME NO.
–IN A 2 Input Inverting input channel A
–IN B 6 Input Inverting input channel B
+IN A 3 Input Noninverting input channel A
+IN B 5 Input Noninverting input channel B
OUT A 1 Output Output channel A
OUT B 7 Output Output channel B
V– 4 Power Negative supply
V+ 8 Power Positive supply
LMC6061 LMC6062 LMC6064 LMC6064: D Package, 14-Pin SOIC (Top View) Figure 4-3 LMC6064: D Package, 14-Pin SOIC (Top View)
Table 4-3 Pin Functions: LMC6064
PIN TYPE DESCRIPTION
NAME NO.
–IN A 2 Input Inverting input channel A
–IN B 6 Input Inverting input channel B
–IN C 9 Input Inverting input channel C
–IN D 13 Input Inverting input channel D
+IN A 3 Input Noninverting input channel A
+IN B 5 Input Noninverting input channel B
+IN C 10 Input Noninverting input channel C
+IN D 12 Input Noninverting input channel D
OUT A 1 Output Output channel A
OUT B 7 Output Output channel B
OUT C 8 Output Output channel C
OUT D 14 Output Output channel D
V– 11 Power Negative supply
V+ 4 Power Positive supply

5 Specifications

5.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MIN MAX UNIT
Differential input voltage ±Supply voltage V
Voltage at input/output pin (V–) – 0.3 (V+) + 0.3 V
VS Supply voltage, VS = (V+) – (V–) 16 V
ISC Output short circuit current To V+ See(3)
To V– See(4)
Current At input pin ±10 mA
At output pin ±30
At power supply pin 40
Power dissipation See(5)
Lead temperature (soldering, 10s) 260 °C
TJ Junction temperature 150 °C
Tstg Storage temperature –65 150 °C
(1) Operation outside the Absolute Maximum Ratings may cause permanent device damage. Absolute Maximum Ratings do not imply functional operation of the device at these or any other conditions beyond those listed under Recommended Operating Conditions. If used outside the Recommended Operating Conditions but within the Absolute Maximum Ratings, the device may not be fully functional, and this may affect device reliability, functionality, performance, and shorten the device lifetime.
(2) If Military/Aerospace specified devices are required, please contact the TI Sales Office/Distributors for availability and specifications.
(3) Do not connect output to V+, when V+ is greater than 13V or reliability can be adversely affected.
(4) Applies to both single-supply and split-supply operation. Continuous short circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150°C. Output currents in excess of ±30mA over long term can adversely affect reliability.
(5) The maximum power dissipation is a function of TJ(Max), θJA, and TA. The maximum allowable power dissipation at any ambient temperature is PD = (TJ(Max) − TA) / θJA

5.2 ESD Ratings

VALUE UNIT
V(ESD) Electrostatic discharge  Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
(1) JEDEC document JEP155 states that 500V HBM allows safe manufacturing with a standard ESD control process.

5.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MIN NOM MAX UNIT
VS Supply voltage, VS = (V+) – (V–) Single supply 4.5 36 V
Dual supply ±2.25 ±18
Specified temperature  –40 125 °C
Power dissipation See(1)
(1) To operate the device at elevated temperatures, derate the device based on thermal resistance θJA with PD = (TJ − TA) / θJA.

5.4 Thermal Information: LMC6061

THERMAL METRIC(1) LMC6061 UNIT
D (SOIC)
8 PINS
RθJA Junction-to-ambient thermal resistance  193.0 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 57.9 °C/W
RθJB Junction-to-board thermal resistance 62.3 °C/W
ψJT Junction-to-top characterization parameter 10.0 °C/W
ψJB Junction-to-board characterization parameter 61.5 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

5.5 Thermal Information: LMC6062

THERMAL METRIC(1) LMC6062 UNIT
D (SOIC) P (PDIP)
8 PINS 8 PINS
RθJA Junction-to-ambient thermal resistance 193.0 115.0 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 52.0 59.2 °C/W
RθJB Junction-to-board thermal resistance 56.9 43.2 °C/W
ψJT Junction-to-top characterization parameter 6.8 25.1 °C/W
ψJB Junction-to-board characterization parameter 56.1 42.3 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance N/A N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

5.6 Thermal Information: LMC6064

THERMAL METRIC(1) LMC6064 UNIT
D (SOIC)
14 PINS
RθJA Junction-to-ambient thermal resistance 126.0 °C/W
RθJC(top) Junction-to-case(top) thermal resistance 34.6 °C/W
RθJB Junction-to-board thermal resistance 34.3 °C/W
ψJT Junction-to-top characterization parameter 4.7 °C/W
ψJB Junction-to-board characterization parameter 33.7 °C/W
RθJC(bot) Junction-to-case(bottom) thermal resistance N/A °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report.

 
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