LMG2650 650V 95mΩ GaN Half Bridge with Integrated Driver and Current Sense Emulation

1 Features

650V GaN power-FET half bridge
95mΩ low-side and high-side GaN FETs
Integrated gate drivers with <100ns low propagation delays
Programmable turn-on slew rate control
Current-sense emulation with high-bandwidth and high accuracy
Low-side referenced (INH) and high-side referenced (GDH) high-side gate drive pins
Low-side (INL) / high-side (INH) gate-drive interlock
High-side (INH) gate-drive signal level shifter
Smart-switched bootstrap diode function
High-side start up : <8µs
Low-side / high-side cycle-by-cycle overcurrent protection
Overtemperature protection
AUX idle quiescent current: 250μA
AUX standby quiescent current: 50μA
BST idle quiescent current: 85μA
8x6 mm QFN package with dual thermal pads

Simplified Block Diagram