The OPAx990 family (OPA990, OPA2990, and OPA4990) is a family of high voltage (40 V) general purpose operational amplifiers. These devices offer excellent DC precision and AC performance, including rail-to-rail input/output, low offset (±300 µV, typ), and low offset drift (±0.6 µV/°C, typ).
Unique features such as differential and common-mode input voltage range to the supply rail, high short-circuit current (±80 mA), high slew rate (4.5 V/µs), and shutdown make the OPAx990 an extremely flexible, robust, and high-performance op amp for high-voltage industrial applications.
The OPAx990 family of op amps is available in micro-size packages (such as X2QFN, WSON, and SOT-553), as well as standard packages (such as SOT-23, SOIC, and TSSOP), and is specified from –40°C to 125°C.
PART NUMBER(1) | PACKAGE | BODY SIZE (NOM) |
---|---|---|
OPA990 | SOT-23 (5) | 2.90 mm × 1.60 mm |
SOT-23 (6) | 2.90 mm × 1.60 mm | |
SC70 (5) | 2.00 mm × 1.25 mm | |
SOT-553 (5)(2) | 1.60 mm × 1.20 mm | |
OPA2990 | SOIC (8) | 4.90 mm × 3.90 mm |
SOT-23 (8) | 2.90 mm × 1.60 mm | |
TSSOP (8) | 3.00 mm × 4.40 mm | |
VSSOP (8) | 3.00 mm × 3.00 mm | |
VSSOP (10) | 3.00 mm × 3.00 mm | |
WSON (8) | 2.00 mm × 2.00 mm | |
X2QFN (10) | 2.00 mm × 1.50 mm | |
OPA4990 | SOIC (14) | 8.65 mm × 3.90 mm |
TSSOP (14) | 5.00 mm × 4.40 mm | |
WQFN (16) | 3.00 mm × 3.00 mm | |
X2QFN (14) | 2.00 mm × 2.00 mm |
Changes from Revision H (May 2021) to Revision I (August 2021)
Changes from Revision G (December 2020) to Revision H (May 2021)
Changes from Revision F (May 2020) to Revision G (December 2020)
Changes from Revision E (December 2019) to Revision F (May 2020)
Changes from Revision D (July 2019) to Revision E (December 2019)
Changes from Revision C (May 2019) to Revision D (July 2019)
Changes from Revision B (April 2019) to Revision C (May 2019)
Changes from Revision A (March 2019) to Revision B (April 2019)
Changes from Revision * (February 2019) to Revision A (March 2019)
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | DBV and DRL | DCK | ||
IN+ | 3 | 1 | I | Noninverting input |
IN– | 4 | 3 | I | Inverting input |
OUT | 1 | 4 | O | Output |
V+ | 5 | 5 | — | Positive (highest) power supply |
V– | 2 | 2 | — | Negative (lowest) power supply |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
IN+ | 3 | I | Noninverting input |
IN– | 4 | I | Inverting input |
OUT | 1 | O | Output |
SHDN | 5 | I | Shutdown: low = amplifier enabled, high = amplifier disabled. See Shutdown section for more information. |
V+ | 6 | — | Positive (highest) power supply |
V– | 2 | — | Negative (lowest) power supply |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
IN1+ | 3 | I | Noninverting input, channel 1 |
IN1– | 2 | I | Inverting input, channel 1 |
IN2+ | 5 | I | Noninverting input, channel 2 |
IN2– | 6 | I | Inverting input, channel 2 |
OUT1 | 1 | O | Output, channel 1 |
OUT2 | 7 | O | Output, channel 2 |
V+ | 8 | — | Positive (highest) power supply |
V– | 4 | — | Negative (lowest) power supply |
PIN | I/O | DESCRIPTION | ||
---|---|---|---|---|
NAME | VSSOP | X2QFN | ||
IN1+ | 3 | 10 | I | Noninverting input, channel 1 |
IN1– | 2 | 9 | I | Inverting input, channel 1 |
IN2+ | 7 | 4 | I | Noninverting input, channel 2 |
IN2– | 8 | 5 | I | Inverting input, channel 2 |
OUT1 | 1 | 8 | O | Output, channel 1 |
OUT2 | 9 | 6 | O | Output, channel 2 |
SHDN1 | 5 | 2 | I | Shutdown, channel 1: low = amplifier enabled, high = amplifier disabled. See Shutdown section for more information. |
SHDN2 | 6 | 3 | I | Shutdown, channel 2: low = amplifier enabled, high = amplifier disabled. See Shutdown section for more information. |
V+ | 10 | 7 | — | Positive (highest) power supply |
V– | 4 | 1 | — | Negative (lowest) power supply |
PIN | I/O | DESCRIPTION | |||
---|---|---|---|---|---|
NAME | SOIC and TSSOP | WQFN | X2QFN | ||
IN1+ | 3 | 1 | 2 | I | Noninverting input, channel 1 |
IN1– | 2 | 16 | 1 | I | Inverting input, channel 1 |
IN2+ | 5 | 3 | 4 | I | Noninverting input, channel 2 |
IN2– | 6 | 4 | 5 | I | Inverting input, channel 2 |
IN3+ | 10 | 10 | 9 | I | Noninverting input, channel 3 |
IN3– | 9 | 9 | 8 | I | Inverting input, channel 3 |
IN4+ | 12 | 12 | 11 | I | Noninverting input, channel 4 |
IN4– | 13 | 13 | 12 | I | Inverting input, channel 4 |
NC | — | 6, 7 | — | — | Do not connect |
OUT1 | 1 | 15 | 14 | O | Output, channel 1 |
OUT2 | 7 | 5 | 6 | O | Output, channel 2 |
OUT3 | 8 | 8 | 7 | O | Output, channel 3 |
OUT4 | 14 | 14 | 13 | O | Output, channel 4 |
V+ | 4 | 2 | 3 | — | Positive (highest) power supply |
V– | 11 | 11 | 10 | — | Negative (lowest) power supply |
PIN | I/O | DESCRIPTION | |
---|---|---|---|
NAME | NO. | ||
IN1+ | 1 | I | Noninverting input, channel 1 |
IN1– | 16 | I | Inverting input, channel 1 |
IN2+ | 3 | I | Noninverting input, channel 2 |
IN2– | 4 | I | Inverting input, channel 2 |
IN3+ | 10 | I | Noninverting input, channel 3 |
IN3– | 9 | I | Inverting input, channel 3 |
IN4+ | 12 | I | Noninverting input, channel 4 |
IN4– | 13 | I | Inverting input, channel 4 |
OUT1 | 15 | O | Output, channel 1 |
OUT2 | 5 | O | Output, channel 2 |
OUT3 | 8 | O | Output, channel 3 |
OUT4 | 14 | O | Output, channel 4 |
SHDN12 | 6 | I | Shutdown, channels 1 and 2: low = amplifiers enabled, high = amplifiers disabled. See Shutdown section for more information. |
SHDN34 | 7 | I | Shutdown, channels 3 and 4: low = amplifiers enabled, high = amplifiers disabled. See Shutdown section for more information. |
VCC+ | 2 | — | Positive (highest) power supply |
VCC– | 11 | — | Negative (lowest) power supply |
MIN | MAX | UNIT | ||
---|---|---|---|---|
Supply voltage, VS = (V+) – (V–) | 0 | 42 | V | |
Signal input pins | Common-mode voltage(3) | (V–) – 0.5 | (V+) + 0.5 | V |
Differential voltage(3) | VS + 0.2 | V | ||
Current(3) | –10 | 10 | mA | |
Shutdown pin voltage(4) | V– | (V–) + 20 | V | |
Output short-circuit(2) | Continuous | |||
Operating ambient temperature, TA | –55 | 150 | °C | |
Junction temperature, TJ | 150 | °C | ||
Storage temperature, Tstg | –65 | 150 | °C |
VALUE | UNIT | ||||
---|---|---|---|---|---|
V(ESD) | Electrostatic discharge | Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) | ±2000 | V | |
Charged device model (CDM), per JEDEC specification JESD22-C101(2) | ±1000 |
MIN | MAX | UNIT | ||
---|---|---|---|---|
VS | Supply voltage, (V+) – (V–) | 2.7 | 40 | V |
VI | Input voltage range | (V–) – 0.2 | (V+) + 0.2 | V |
VIH | High level input voltage at shutdown pin (amplifier disabled) | (V–) + 1.1 | (V–) + 20 V(1) | V |
VIL | Low level input voltage at shutdown pin (amplifier enabled) | (V–) | (V–) + 0.2 | V |
TA | Specified temperature | –40 | 125 | °C |
THERMAL METRIC(1) | OPA990, OPA990S | UNIT | |||||
---|---|---|---|---|---|---|---|
DBV (SOT-23) |
DCK (SC70) |
DRL(2)
(SOT-553) |
|||||
5 PINS | 6 PINS | 5 PINS | 5 PINS | 6 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 192.1 | 174.5 | 204.6 | TBD | TBD | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 113.6 | 113.4 | 116.5 | TBD | TBD | °C/W |
RθJB | Junction-to-board thermal resistance | 60.5 | 55.8 | 51.8 | TBD | TBD | °C/W |
ψJT | Junction-to-top characterization parameter | 37.2 | 39.6 | 24.9 | TBD | TBD | °C/W |
ψJB | Junction-to-board characterization parameter | 60.3 | 55.6 | 51.5 | TBD | TBD | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | N/A | TBD | TBD | °C/W |
THERMAL METRIC(1) | OPA2990, OPA2990S | UNIT | |||||||
---|---|---|---|---|---|---|---|---|---|
D (SOIC) |
DDF (SOT-23-8) |
DGK (VSSOP) |
DGS (VSSOP) |
DSG (WSON) |
PW (TSSOP) |
RUG (X2QFN) |
|||
8 PINS | 8 PINS | 8 PINS | 10 PINS | 8 PINS | 8 PINS | 10 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 138.7 | 150.4 | 189.3 | 152.2 | 81.6 | 188.4 | 149.6 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 78.7 | 85.6 | 75.8 | 67.3 | 101.6 | 77.1 | 58.3 | °C/W |
RθJB | Junction-to-board thermal resistance | 82.2 |
70.0 |
111.0 | 95.5 | 48.3 | 119.1 | 77.7 | °C/W |
ψJT | Junction-to-top characterization parameter | 27.8 | 8.1 | 15.4 | 67.9 | 6.0 | 14.2 | 1.3 | °C/W |
ψJB | Junction-to-board characterization parameter | 81.4 | 69.6 | 109.3 | 94.3 | 48.3 | 117.4 | 77.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | N/A | N/A | 22.8 | N/A | N/A | °C/W |
THERMAL METRIC(1) | OPA4990, OPA4990S | UNIT | ||||
---|---|---|---|---|---|---|
D (SOIC) |
PW (TSSOP) |
RTE(2)
(WQFN) |
RUC (WQFN) |
|||
14 PINS | 14 PINS | 16 PINS | 14 PINS | |||
RθJA | Junction-to-ambient thermal resistance | 105.2 | 134.7 | 53.5 | 143.0 | °C/W |
RθJC(top) | Junction-to-case (top) thermal resistance | 61.2 | 55.0 | 58.3 | 46.4 | °C/W |
RθJB | Junction-to-board thermal resistance | 61.1 | 79.0 | 28.6 | 81.8 | °C/W |
ψJT | Junction-to-top characterization parameter | 21.4 | 9.2 | 2.1 | 1.0 | °C/W |
ψJB | Junction-to-board characterization parameter | 60.7 | 78.1 | 28.6 | 81.5 | °C/W |
RθJC(bot) | Junction-to-case (bottom) thermal resistance | N/A | N/A | 12.6 | N/A | °C/W |
PARAMETER | TEST CONDITIONS | MIN | TYP | MAX | UNIT | ||
---|---|---|---|---|---|---|---|
OFFSET VOLTAGE | |||||||
VOS | Input offset voltage | VCM = V– | ±0.3 | ±1.5 | mV | ||
TA = –40°C to 125°C | ±1.75 | ||||||
dVOS/dT | Input offset voltage drift | TA = –40°C to 125°C | ±0.6 | µV/℃ | |||
PSRR | Input offset voltage versus power supply | VCM = V–, VS = 4 V to 40 V | TA = –40°C to 125°C | ±0.1 | ±1.3 | µV/V | |
VCM = V–, VS = 2.7 V to 40 V(2) | ±0.75 | ±6.6 | |||||
Channel separation | f = 0 Hz | 5 | µV/V | ||||
INPUT BIAS CURRENT | |||||||
IB | Input bias current | ±10 | pA | ||||
IOS | Input offset current | ±5 | pA | ||||
NOISE | |||||||
EN | Input voltage noise | f = 0.1 Hz to 10 Hz | 6 | µVPP | |||
1 | µVRMS | ||||||
eN | Input voltage noise density | f = 1 kHz | 30 | nV/√Hz | |||
f = 10 kHz | 28 | ||||||
iN | Input current noise | f = 1 kHz | 2 | fA/√Hz | |||
INPUT VOLTAGE RANGE | |||||||
VCM | Common-mode voltage range | (V–) – 0.2 | (V+) + 0.2 | V | |||
CMRR | Common-mode rejection ratio | VS = 40 V, (V–) – 0.1 V < VCM < (V+) – 2 V (PMOS pair) | TA = –40°C to 125°C | 100 | 115 | dB | |
VS = 4 V, (V–) – 0.1 V < VCM < (V+) – 2 V (PMOS pair) | 75 | 90 | |||||
VS = 2.7 V, (V–) – 0.1 V < VCM < (V+) – 2 V (PMOS pair)(2) | 70 | 90 | |||||
VS = 2.7 – 40 V, (V+) – 1 V < VCM < (V+) + 0.1 V (NMOS pair) | 80 | ||||||
(V+) – 2 V < VCM < (V+) – 1 V | See Offset Voltage (Transition Region) in the Typical Characteristics section | ||||||
INPUT CAPACITANCE | |||||||
ZID | Differential | 540 || 3 | GΩ || pF | ||||
ZICM | Common-mode | 6 || 1 | TΩ || pF | ||||
OPEN-LOOP GAIN | |||||||
AOL | Open-loop voltage gain | VS = 40 V, VCM = VS / 2, (V–) + 0.1 V < VO < (V+) – 0.1 V |
120 | 145 | dB | ||
TA = –40°C to 125°C | 142 | ||||||
VS = 4 V, VCM = VS / 2, (V–) + 0.1 V < VO < (V+) – 0.1 V |
104 | 130 | |||||
TA = –40°C to 125°C | 125 | ||||||
VS = 2.7 V, VCM = VS / 2, (V–) + 0.1 V < VO < (V+) – 0.1 V(2) |
101 | 118 | dB | ||||
TA = –40°C to 125°C | 117 | dB | |||||
FREQUENCY RESPONSE | |||||||
GBW | Gain-bandwidth product | 1.1 | MHz | ||||
SR | Slew rate | VS = 40 V, G = +1, CL = 20 pF | 4.5 | V/μs | |||
tS | Settling time | To 0.1%, VS = 40 V, VSTEP = 10 V , G = +1, CL = 20 pF | 4 | µs | |||
To 0.1%, VS = 40 V, VSTEP = 2 V , G = +1, CL = 20 pF | 2 | ||||||
To 0.01%, VS = 40 V, VSTEP = 10 V , G = +1, CL = 20 pF | 5 | ||||||
To 0.01%, VS = 40 V, VSTEP = 2 V , G = +1, CL = 20 pF | 3 | ||||||
Phase margin | G = +1, RL = 10 kΩ, CL = 20 pF | 60 | ° | ||||
Overload recovery time | VIN × gain > VS | 600 | ns | ||||
THD+N | Total harmonic distortion + noise | VS = 40 V, VO = 1 VRMS, G = 1, f = 1 kHz | 0.00162% | ||||
OUTPUT | |||||||
Voltage output swing from rail | Positive and negative rail headroom |
VS = 40 V, RL = no load | 2 | mV | |||
VS = 40 V, RL = 10 kΩ | 45 | 60 | |||||
VS = 40 V, RL = 2 kΩ | 200 | 300 | |||||
VS = 2.7 V, RL = no load | 1 | ||||||
VS = 2.7 V, RL = 10 kΩ | 5 | 20 | |||||
VS = 2.7 V, RL = 2 kΩ | 25 | 50 | |||||
ISC | Short-circuit current | ±80 | mA | ||||
CLOAD | Capacitive load drive | See Small-Signal Overshoot vs Capacitive Load in the Typical Characteristics section | |||||
ZO | Open-loop output impedance | f = 1 MHz, IO = 0 A | 575 | Ω | |||
POWER SUPPLY | |||||||
IQ | Quiescent current per amplifier | OPA2990, OPA4990, IO = 0 A | 120 | 150 | µA | ||
TA = –40°C to 125°C | 160 | ||||||
OPA990, IO = 0 A | 130 | 170 | |||||
TA = –40°C to 125°C | 175 | ||||||
Turn-on time | At TA = 25°C, VS = 40 V, VS ramp rate >
0.3 V/µs |
40 | μs | ||||
SHUTDOWN | |||||||
IQSD | Quiescent current per amplifier | VS = 2.7 V to 40 V, all amplifiers disabled, SHDN = V– + 2 V | 20 | 30 | µA | ||
ZSHDN | Output impedance during shutdown | VS = 2.7 V to 40 V, amplifier disabled, SHDN = V– + 2 V | 10 || 12 | GΩ || pF | |||
VIH | Logic high threshold voltage (amplifier disabled) | For valid input high, the SHDN pin voltage should be greater than the maximum threshold but less than or equal to (V–) + 20 V | (V–) + 0.8 | (V–) + 1.1 | V | ||
VIL | Logic low threshold voltage (amplifier enabled) | For valid input low, the SHDN pin voltage should be less than the minimum threshold but greater than or equal to V– | (V–) + 0.2 | (V–) + 0.8 | V | ||
tON | Amplifier enable time (1) | G = +1, VCM = V–, VO = 0.1 × VS / 2 | 11 | µs | |||
tOFF | Amplifier disable time (1) | VCM = V–, VO = VS / 2 | 2.5 | µs | |||
SHDN pin input bias current (per pin) | VS = 2.7 V to 40 V, (V–) + 20 V ≥ SHDN ≥ (V–) + 0.9 V | 500 | nA | ||||
VS = 2.7 V to 40 V, (V–) ≤ SHDN ≤ (V–) + 0.7 V | 150 |