OPA4H199-SEP 40-V, Radiation Hardened, Rail-to-Rail Input/Output, Low Offset Voltage, Low Noise Op Amp in Space Enhanced Plastic

1 Features

Radiation hardened
- Single Event Latch-up (SEL) immune to 43 MeV-cm²/mg at 125°C
- ELDRS free to 30 krad(Si)
- Total Ionizing Dose (TID) RLAT for every wafer lot up to 30 krad(Si)
Supports defense, aerospace, and medical applications
- Single controlled baseline
- One fabrication, assembly and test site
- Gold wire
- NiPdAu lead finish
- Available in military (–55°C to 125°C) temperature range
- Extended product life cycle
- Extended product-change notification
- Product traceability
- Enhanced mold compound for low outgassing
Low offset voltage: ±125 µV
Low noise: 10.8 nV/√Hz at 1 kHz
High common-mode rejection: 130 dB
Low bias current: ±10 pA
Rail-to-rail input and output
Wide bandwidth: 4.5 MHz GBW
High slew rate: 21 V/µs
High capacitive load drive: 1 nF
MUX-friendly/comparator inputs
Low quiescent current: 560 µA per amplifier
Wide supply: ±1.35 V to ±20 V, 2.7 V to 40 V
Robust EMIRR performance: EMI/RFI filters on input and supply pins