SCDS176B SEPTEMBER   2004  – October 2019 TS3L110

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Logic Diagram (Positive Logic)
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Dynamic Characteristics
    8. 6.8 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Receiving Notification of Documentation Updates
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • PW|16
  • DBQ|16
  • RGY|16
  • D|16
  • DGV|16
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Wide bandwidth (BW = 500 MHz typical)
  • Low crosstalk (XTALK = –30 dB typical)
  • Bidirectional data flow with near-zero propagation delay
  • Low and flat ON-state resistance
    (ron = 4 Ω typical, ron(flat) = 1 Ω)
  • Switching on Data I/O Ports (0 to 5 V)
  • VCC Operating range from 3 V to 3.6 V
  • Ioff Supports partial power-down-mode operation
  • Data and control inputs have undershoot clamp diodes
  • Latch-up performance exceeds 100 mA Per
    JESD 78, class II
  • ESD Performance tested per JESD 22
    • 2000-V Human-body model
      (A114-B, class II)
    • 1000-V Charged-device model (C101)
  • Suitable for both 10 Base-T and 100 Base-T signaling