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  • TS5A3166 0.9-Ω SPST Analog Switch

    • SCDS186E FEBRUARY   2005  – February 2018 TS5A3166

      PRODUCTION DATA.  

  • CONTENTS
  • SEARCH
  • TS5A3166 0.9-Ω SPST Analog Switch
  1. 1 Features
  2. 2 Applications
  3. 3 Description
    1.     Simplified Schematic
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics for 5-V Supply
    6. 6.6 Electrical Characteristics for 3.3-V Supply
    7. 6.7 Electrical Characteristics for 2.5-V Supply
    8. 6.8 Electrical Characteristics for 1.8-V Supply
    9. 6.9 Typical Characteristics
  7. 7 Parameter Measurement Information
  8. 8 Detailed Description
    1. 8.1 Overview
    2. 8.2 Functional Block Diagram
    3. 8.3 Feature Description
    4. 8.4 Device Functional Modes
  9. 9 Application and Implementation
    1. 9.1 Application Information
    2. 9.2 Typical Application
      1. 9.2.1 Design Requirements
      2. 9.2.2 Detailed Design Procedure
      3. 9.2.3 Application Curves
  10. 10Power Supply Recommendations
  11. 11Layout
    1. 11.1 Layout Guidelines
    2. 11.2 Layout Example
  12. 12Device and Documentation Support
    1. 12.1 Device Support
      1. 12.1.1 Device Nomenclature
    2. 12.2 Community Resources
    3. 12.3 Trademarks
    4. 12.4 Electrostatic Discharge Caution
    5. 12.5 Glossary
  13. 13Mechanical, Packaging, and Orderable Information
  14. IMPORTANT NOTICE

Package Options

Mechanical Data (Package|Pins)
  • DCK|5
    • MPDS025K
  • YZP|5
    • MXBG018L
  • DBV|5
    • MPDS018T
Thermal pad, mechanical data (Package|Pins)
Orderable Information
  • scds186e_oa
  • scds186e_pm
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DATA SHEET

TS5A3166 0.9-Ω SPST Analog Switch

1 Features

  • Low ON-State Resistance (0.9 Ω)
  • Control Inputs Are 5.5-V Tolerant
  • Low Charge Injection
  • Low Total Harmonic Distortion (THD)
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human-Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

2 Applications

  • Cell Phones
  • PDAs
  • Portable Instrumentation
  • Audio and Video Signal Routing
  • Low-Voltage Data-Acquisition Systems
  • Communication Circuits
  • Modems
  • Hard Drives
  • Computer Peripherals
  • Wireless Terminals and Peripherals
  • Microphone Switching – Notebook Docking

3 Description

The TS5A3166 device is a single-pole single-throw (SPST) analog switch that is designed to operate from 1.65 V to 5.5 V. The device offers a low ON-state resistance. The device has excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for portable audio applications.

Device Information(1)

PART NUMBERPACKAGEBODY SIZE (NOM)
TS5A3166 SOT-23 (5) 2.90 mm × 1.60 mm
SC70 (5) 2.00 mm × 1.25 mm
DSBGA (5) 1.388 mm × 0.888 mm
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Simplified Schematic

TS5A3166 fbd_scds186.gif

4 Revision History

Changes from D Revision (February 2016) to E Revision

  • Changed the YZP package pin numbers Go

Changes from C Revision (May 2015) to D Revision

  • Added "port" to COM description in Pin Functions tableGo
  • Deleted "digitial" from GND description in Pin Functions tableGo

Changes from B Revision (September 2013) to C Revision

  • Added Applications, Device Information table, Pin Functions table, ESD Ratings table, Thermal Information table, Typical Characteristics, Feature Description section, Device Functional Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device and Documentation Support section, and Mechanical, Packaging, and Orderable Information section.Go
  • Deleted Ordering Information table.Go

Changes from A Revision (October 2012) to B Revision

  • Removed 'Isolation in Powered-Off Mode, V+ = 0' bullet from FeaturesGo
  • Changed pin name from NC to NO throughout the datasheet.Go

5 Pin Configuration and Functions

DBV and DCK Packages
5-Pin SOT-23 and SC-70
Top View
TS5A3166 po_sot_cds186.gif
YZP Package
5-Pin DSBGA
Bottom View
TS5A3166 po_dsbga_cds186.gif

Pin Functions

PINTYPEDESCRIPTION
DBC, DCK
NO.		YZP
NO.		NAME
1 A1 NO I/O Normally opened port
2 B1 COM I/O Common port
3 C1 GND GND Ground
4 C2 IN I Digital control pin to connect COM to NO
5 A2 V+ Power Power Supply

6 Specifications

6.1 Absolute Maximum Ratings

over operating free-air temperature range (unless otherwise noted)(1)(2)
MINMAXUNIT
V+ Supply voltage(3) –0.5 6.5 V
VNO
VCOM		 Analog voltage(3)(4)(5) –0.5 V+ + 0.5 V
IK Analog port diode current VNO, VCOM < 0 –50 mA
INO
ICOM		 ON-state switch current VNO, VCOM = 0 to V+ –200 200 mA
ON-state peak switch current(6) –400 400
VI Digital input voltage(3)(4) –0.5 6.5 V
IIK Digital clamp current VI < 0 –50 mA
I+ Continuous current through V+ 100 mA
IGND Continuous current through GND –100 mA
Tstg Storage temperature –65 150 °C
Tj Junction temperature 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(2) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum
(3) All voltages are with respect to ground, unless otherwise specified.
(4) The input and output voltage ratings may be exceeded if the input and output clamp-current ratings are observed.
(5) This value is limited to 5.5 V maximum.
(6) Pulse at 1-ms duration < 10% duty cycle.

6.2 ESD Ratings

VALUEUNIT
V(ESD) Electrostatic discharge Human-body model (HBM), per ANSI/ESDA/JEDEC JS-001(1) ±2000 V
Charged-device model (CDM), per JEDEC specification JESD22-C101(2) ±1000
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

over operating free-air temperature range (unless otherwise noted)
MINMAXUNIT
VI/O Input/output voltage 0 V+ V
V+ Supply voltage 1.65 5.5 V
VI Control Input Voltage 0 5.5 V
TA Operating free-air temperature –40 85 °C

6.4 Thermal Information

THERMAL METRIC(1)TS5A3166UNIT
DBV (SOT)DCK (SC-70)YZP (DSBGA)
5 PINS5 PINS5 PINS
RθJA Junction-to-ambient thermal resistance 206 252 132 °C/W
(1) For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application report, SPRA953.

6.5 Electrical Characteristics for 5-V Supply

V+ = 4.5 V to 5.5 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETERTEST CONDITIONSTAV+MINTYPMAXUNIT
Analog Switch
VCOM,
VNO		 Analog signal range 0 V+ V
rpeak Peak ON resistance 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 4.5 V 0.8 1.1 Ω
Full 1.2
ron ON-state resistance VNO = 2.5 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 4.5 V 0.7 0.9 Ω
Full 1
ron(flat) ON-state resistance
flatness		 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 4.5 V 0.15 Ω
VNO = 1 V, 1.5 V, 2.5 V,
ICOM = –100 mA,		 25°C 0.09 0.15
Full 0.15
INO(OFF) NO
OFF leakage current		 VNO = 1 V,
VCOM = 4.5 V,
or
VNO = 4.5 V,
VCOM = 1 V,		 Switch OFF,
see Figure 14		 25°C 5.5 V –20 4 20 nA
Full –100 100
INO(PWROFF) VNO = 0 to 5.5 V,
VCOM = 5.5 V to 0, 		25°C 0 V –5 0.4 5 μA
Full –15 15
ICOM(OFF) COM
OFF leakage current		 VCOM = 1 V,
VNO = 4.5 V,
or
VCOM = 4.5 V,
VNO = 1 V,		 Switch OFF,
see Figure 14		 25°C 5.5 V –20 4 20 nA
Full –100 100
ICOM(PWROFF) VCOM = 5.5 V to 0,
VNO = 0 to 5.5 V,		 25°C 0 V –5 0.4 5 μA
Full –15 15
INO(ON) NO
ON leakage current		 VNO = 1 V,
VCOM = Open,
or
VNO = 4.5 V,
VCOM = Open,		 Switch ON,
see Figure 15		 25°C 5.5 V –2 0.3 2 nA
Full –20 20
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNO = Open,
or
VCOM = 4.5 V,
VNO = Open,		 Switch ON,
see Figure 15		 25°C 5.5 V –2 0.3 2 nA
Full –20 20
Digital Control Inputs (IN)
VIH Input logic high Full 2.4 5.5 V
VIL Input logic low Full 0 0.8 V
IIH, IIL Input leakage
current		 VI = 5.5 V or 0 25°C 5.5 V –2 0.3 2 nA
Full –20 20
Dynamic
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 5 V 2.5 4.5 7 ns
Full 4.5 V to
5.5 V		 1.5 7.5
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 5 V 6 9 11.5 ns
Full 4.5 V to
5.5 V		 4 12.5
QC Charge injection VGEN = 0,
RGEN = 0 ,		 CL = 1 nF,
see Figure 20		 25°C 5 V 1 pC
CNO(OFF) NO
OFF capacitance		 VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 5 V 19 pF
CCOM(OFF) COM
OFF capacitance		 VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 5 V 18 pF
CNO(ON) NO
ON capacitance		 VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 5 V 35.5 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 5 V 35.5 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 5 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 5 V 200 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
see Figure 19		 25°C 5 V –64 dB
THD Total harmonic
distortion		 RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
see Figure 21		 25°C 5 V 0.005%
Supply
I+ Positive supply
current		 VI = V+ or GND, Switch ON or OFF 25°C 5.5 V 0.01 0.1 μA
Full 0.5
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.6 Electrical Characteristics for 3.3-V Supply

V+ = 3 V to 3.6 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETERTEST CONDITIONSTAV+MINTYPMAXUNIT
Analog Switch
VCOM,
VNO		 Analog signal range 0 V+ V
rpeak Peak ON resistance 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 3 V 1.1 1.5 Ω
Full 1.7
ron ON-state resistance VNO = 2 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 3 V 1 1.4 Ω
Full 1.5
ron(flat) ON-state resistance
flatness		 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 3 V 0.3 Ω
VNO = 2 V, 0.8 V,
ICOM = –100 mA,		 25°C 0.09 0.15
Full 0.15
INO(OFF) NO
OFF leakage current		 VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
see Figure 14		 25°C 3.6 V –2 0.5 2 nA
Full –20 20
INO(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 25°C 0 V –1 0.1 1 μA
Full –5 5
ICOM(OFF) COM
OFF leakage current		 VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,		 Switch OFF,
see Figure 14		 25°C 3.6 V –2 0.5 2 nA
Full –20 20
ICOM(PWROFF) VCOM = 3.6 V to 0,
VNO = 0 to 3.6 V,		 25°C 0 V –1 0.1 1 μA
Full –5 5
INO(ON) NO
ON leakage current		 VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,		 Switch ON,
see Figure 15		 25°C 3.6 V –2 0.2 2 nA
Full –20 20
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,		 Switch ON,
see Figure 15		 25°C 3.6 V –2 0.2 2 nA
Full –20 20
Digital Control Inputs (IN)
VIH Input logic high Full 2 5.5 V
VIL Input logic low Full 0 0.8 V
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 3.6 V –2 0.3 2 nA
Full –20 20
Dynamic
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 3.3 V 2 5 10 ns
Full 3 V to
3.6 V		 1.5 11
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 3.3 V 6.5 9 12 ns
Full 3 V to
3.6 V		 4 13
QC Charge injection VGEN = 0,
RGEN = 0, 		CL = 1 nF,
see Figure 21		 25°C 3.3 V 1 pC
CNO(OFF) NO
OFF capacitance		 VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 3.3 V 19 pF
CCOM(OFF) COM
OFF capacitance		 VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 3.3 V 18 pF
CNO(ON) NO
ON capacitance		 VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 3.3 V 36 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 3.3 V 36 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 3.3 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 3.3 V 200 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
see Figure 19		 25°C 3.3 V –64 dB
THD Total harmonic
distortion		 RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
see Figure 21		 25°C 3.3 V 0.01%
Supply
I+ Positive supply
current		 VI = V+ or GND, Switch ON or OFF 25°C 3.6 V 0.01 0.1 μA
Full 0.25
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.7 Electrical Characteristics for 2.5-V Supply

V+ = 2.3 V to 2.7 V, TA = –40°C to 85°C (unless otherwise noted)(1)
PARAMETERTEST CONDITIONSTAV+MINTYPMAXUNIT
Analog Switch
VCOM,
VNO		 Analog signal range 2.3 V 0 V+ V
rpeak Peak ON resistance 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 2.3 V 1.8 2.4 Ω
Full 2.6
ron ON-state resistance VNO = 2 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 2.3 V 1.2 2.1 Ω
Full 2.4
ron(flat) ON-state resistance
flatness		 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 2.3 V 0.7 Ω
VNO = 2 V, 0.8 V,
ICOM = –100 mA,		 25°C 0.4 0.6
Full 0.6
INO(OFF) NO
OFF leakage current		 VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
see Figure 14		 25°C 2.7 V –5 0.3 5 nA
Full –50 50
INO(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 25°C 0 V –2 0.05 2 μA
Full –15 15
ICOM(OFF) COM
OFF leakage current		 VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,		 Switch OFF,
see Figure 14		 25°C 2.7 V –5 0.3 5 nA
Full –50 50
ICOM(PWROFF) VCOM = 3.6 V to 0,
VNO = 0 to 3.6 V,		 25°C 0 V –2 0.05 2 μA
Full –15 15
INO(ON) NO
ON leakage current		 VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,		 Switch ON,
see Figure 15		 25°C 2.7 V –2 0.3 2 nA
Full –20 20
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,		 Switch ON,
see Figure 15		 25°C 2.7 V –2 0.3 2 nA
Full –20 20
Digital Control Inputs (IN1, IN2)
VIH Input logic high Full 1.8 5.5 V
VIL Input logic low Full 0 0.6 V
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 2.7 V –2 0.3 2 nA
Full –20 20
Dynamic
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 2.5 V 2 6 10 ns
Full 2.3 V to 2.7 V 1 12
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 2.5 V 4.5 8 10.5 ns
Full 2.3 V to 2.7 V 3 15
QC Charge injection VGEN = 0,
RGEN = 0, 		CL = 1 nF,
see Figure 21		 25°C 2.5 V 4 pC
CNO(OFF) NO
OFF capacitance		 VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 2.5 V 19.5 pF
CCOM(OFF) COM
OFF capacitance		 VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 2.5 V 18.5 pF
CNO(ON) NO
ON capacitance		 VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 2.5 V 36.5 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 2.5 V 36.5 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 2.5 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 2.5 V 150 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
see Figure 19		 25°C 2.5 V –62 dB
THD Total harmonic
distortion		 RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz,
see Figure 21		 25°C 2.5 V 0.02%
Supply
I+ Positive supply
current		 VI = V+ or GND, Switch ON or OFF 25°C 2.7 V 0.001 0.02 μA
Full 0.25
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

6.8 Electrical Characteristics for 1.8-V Supply(1)

V+ = 1.65 V to 1.95 V, TA = –40°C to 85°C (unless otherwise noted))
PARAMETERTEST CONDITIONSTAV+MINTYPMAXUNIT
Analog Switch
VCOM,
VNO		 Analog signal range 0 V+ V
rpeak Peak ON resistance 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 1.65 V 4.2 25 Ω
Full 30
ron ON-state resistance VNO = 2 V,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 1.65 V 1.6 3.9 Ω
Full 4.0
ron(flat) ON-state resistance
flatness		 0 ≤ VNO ≤ V+,
ICOM = –100 mA,		 Switch ON,
see Figure 13		 25°C 1.65 V 2.8 Ω
VNO = 2 V, 0.8 V,
ICOM = –100 mA,		 25°C 4.1 22
Full 27
INO(OFF) NO
OFF leakage current		 VNO = 1 V,
VCOM = 3 V,
or
VNO = 3 V,
VCOM = 1 V,		 Switch OFF,
see Figure 14		 25°C 1.95 V –5 5 nA
Full –50 50
INO(PWROFF) VNO = 0 to 3.6 V,
VCOM = 3.6 V to 0,		 25°C 0 V –2 2 μA
Full –10 10
ICOM(OFF) COM
OFF leakage current		 VCOM = 1 V,
VNO = 3 V,
or
VCOM = 3 V,
VNO = 1 V,		 Switch OFF,
see Figure 14		 25°C 1.95 V –5 5 nA
Full –50 50
ICOM(PWROFF) VCOM = 0 to 3.6 V,
VNO = 3.6 V to 0,		 25°C 0 V –2 2 μA
Full –10 10
INO(ON) NO
ON leakage current		 VNO = 1 V,
VCOM = Open,
or
VNO = 3 V,
VCOM = Open,		 Switch ON,
see Figure 15		 25°C 1.95 V –2 2 nA
Full –20 20
ICOM(ON) COM
ON leakage current		 VCOM = 1 V,
VNO = Open,
or
VCOM = 3 V,
VNO = Open,		 Switch ON,
see Figure 15		 25°C 1.95 V –2 2 nA
Full –20 20
Digital Control Inputs (IN1, IN2)
VIH Input logic high Full 1.5 5.5 V
VIL Input logic low Full 0 0.6 V
IIH, IIL Input leakage current VI = 5.5 V or 0 25°C 1.95 V –2 0.3 2 nA
Full –20 20
Dynamic
tON Turnon time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 1.8 V 3 9 18 ns
Full 1.65 V to
1.95 V		 1 20
tOFF Turnoff time VCOM = V+,
RL = 50 Ω,		 CL = 35 pF,
see Figure 17		 25°C 1.8 V 5 10 15.5 ns
Full 1.65 V to
1.95 V		 4 18.5
QC Charge injection VGEN = 0,
RGEN = 0, 		CL = 1 nF,
see Figure 21		 25°C 1.8 V 2 pC
CNO(OFF) NO
OFF capacitance		 VNO = V+ or GND,
Switch OFF,		 See Figure 16 25°C 1.8 V 19.5 pF
CCOM(OFF) COM
OFF capacitance		 VCOM = V+ or GND,
Switch OFF,		 See Figure 16 25°C 1.8 V 18.5 pF
CNO(ON) NO
ON capacitance		 VNO = V+ or GND,
Switch ON,		 See Figure 16 25°C 1.8 V 36.5 pF
CCOM(ON) COM
ON capacitance		 VCOM = V+ or GND,
Switch ON,		 See Figure 16 25°C 1.8 V 36.5 pF
CI Digital input
capacitance		 VI = V+ or GND, See Figure 16 25°C 1.8 V 2 pF
BW Bandwidth RL = 50 Ω,
Switch ON,		 See Figure 18 25°C 1.8 V 150 MHz
OISO OFF isolation RL = 50 Ω,
f = 1 MHz,		 Switch OFF,
see Figure 19		 25°C 1.8 V –62 dB
THD Total harmonic
distortion		 RL = 600 Ω,
CL = 50 pF,		 f = 20 Hz to 20 kHz
see Figure 21		 25°C 1.8 V 0.055%
Supply
I+ Positive supply
current		 VI = V+ or GND, Switch ON or OFF 25°C 1.95 V 0.001 0.01 μA
Full 0.15
(1) The algebraic convention, whereby the most negative value is a minimum and the most positive value is a maximum.

 
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