UCC21738-Q1 Automotive 10-A Source and Sink Reinforced Isolated Single Channel Gate Driver for SiC/IGBT with Active Protection and High-CMTI

1 Features

5.7-kV_RMS single channel isolated gate driver
AEC-Q100 Qualified with the following results:
- Device temperature grade 1: -40°C to +125°C ambient operating temperature range
- Device HBM ESD classification level 3A
- Device CDM ESD classification level C6
Functional Safety Quality-Managed
- Documentation available to aid functional safety system design
SiC MOSFETs and IGBTs up to 2121 V_pk
33-V maximum output drive voltage (VDD-VEE)
±10-A drive strength and split output
150-V/ns minimum CMTI
270-ns response time fast overcurrent protection
External active Miller clamp
900-mA soft turn-off when fault happens
ASC input on isolated side to turn on power switch during system fault
Alarm FLT on overcurrent and reset from RST/EN
Fast enable/disable response on RST/EN
Rejects <40-ns noise transient and pulse on input pins
12-V VDD UVLO with power good on RDY
Inputs/outputs with over/under-shoot transient voltage immunity up to 5 V
130-ns (maximum) propagation delay and 30-ns (maximum) pulse/part skew
SOIC-16 DW package with creepage and clearance distance > 8 mm
Operating junction temperature –40°C to 150°C