SLUSE23B March   2020  – May 2022 UCC27284-Q1

PRODUCTION DATA  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
    1.     Pin Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Timing Diagrams
    8. 6.8 Typical Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-Up and UVLO
      2. 7.3.2 Input Stage
      3. 7.3.3 Level Shifter
      4. 7.3.4 Output Stage
      5. 7.3.5 Negative Voltage Transients
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and VDD Capacitor
        2. 8.2.2.2 Estimate Driver Power Losses
        3. 8.2.2.3 Selecting External Gate Resistor
        4. 8.2.2.4 Delays and Pulse Width
        5. 8.2.2.5 External Bootstrap Diode
        6. 8.2.2.6 VDD and Input Filter
        7. 8.2.2.7 Transient Protection
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Third-Party Products Disclaimer
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Support Resources
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • D|8
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • AEC-Q100 qualified with following results
    • Temperature grade 1 (Tj = –40°C to 150°C)
    • Device HBM ESD classification level 1B
    • Device CDM ESD classification level C3
  • Drives two N-channel MOSFETs in high-side low-side configuration
  • 5-V typical undervoltage lockout
  • 16-ns typical propagation delay
  • 12-ns rise, 10-ns fall time with 1.8-nF load
  • 1-ns typical delay matching
  • 5-V negative voltage handling on inputs
  • 14-V negative voltage handling on HS
  • ±3-A peak output current
  • Absolute maximum boot voltage 120 V
  • Integrated bootstrap diode