TLC071A

ACTIVE

Single, 16-V, 10-MHz, 1.4-mV offset voltage operational amplifier

A newer version of this product is available

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TLV9161 ACTIVE Single, 16-V, 11-MHz, rail-to-rail input/output, low-offset-voltage, low-noise op amp Higher GBW (11 MHz), faster slew rate (33 V/us), lower offset voltage (1 mV), lower noise (6.8 nV/√Hz)

Product details

Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail No GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.4 Iq per channel (typ) (mA) 1.9 Vn at 1 kHz (typ) (nV√Hz) 7 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 95 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0.5 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
Number of channels 1 Total supply voltage (+5 V = 5, ±5 V = 10) (max) (V) 16 Total supply voltage (+5 V = 5, ±5 V = 10) (min) (V) 4.5 Rail-to-rail No GBW (typ) (MHz) 10 Slew rate (typ) (V/µs) 16 Vos (offset voltage at 25°C) (max) (mV) 1.4 Iq per channel (typ) (mA) 1.9 Vn at 1 kHz (typ) (nV√Hz) 7 Rating Catalog Operating temperature range (°C) -40 to 125 Offset drift (typ) (µV/°C) 1.2 Input bias current (max) (pA) 50 CMRR (typ) (dB) 95 Iout (typ) (A) 0.1 Architecture CMOS Input common mode headroom (to negative supply) (typ) (V) 0.5 Input common mode headroom (to positive supply) (typ) (V) -0.8 Output swing headroom (to negative supply) (typ) (V) 0.18 Output swing headroom (to positive supply) (typ) (V) -0.7
PDIP (P) 8 92.5083 mm² 9.81 x 9.43 SOIC (D) 8 29.4 mm² 4.9 x 6
  • Wide Bandwidth . . . 10 MHz
  • High Output Drive
    • IOH . . . 57 mA at VDD – 1.5 V
    • IOL . . . 55 mA at 0.5 V
  • High Slew Rate
    • SR+ . . . 16 V/µs
    • SR– . . . 19 V/µs
  • Wide Supply Range . . . 4.5 V to 16 V
  • Supply Current . . . 1.9 mA/Channel
  • Ultralow Power Shutdown Mode
    • IDD . . . 125 µA/Channel
  • Low Input Noise Voltage . . . 7 nV√Hz
  • Input Offset Voltage . . . 60 µV
  • Ultra-Small Packages
  • 8 or 10 Pin MSOP (TLC070/1/2/3)

PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.

  • Wide Bandwidth . . . 10 MHz
  • High Output Drive
    • IOH . . . 57 mA at VDD – 1.5 V
    • IOL . . . 55 mA at 0.5 V
  • High Slew Rate
    • SR+ . . . 16 V/µs
    • SR– . . . 19 V/µs
  • Wide Supply Range . . . 4.5 V to 16 V
  • Supply Current . . . 1.9 mA/Channel
  • Ultralow Power Shutdown Mode
    • IDD . . . 125 µA/Channel
  • Low Input Noise Voltage . . . 7 nV√Hz
  • Input Offset Voltage . . . 60 µV
  • Ultra-Small Packages
  • 8 or 10 Pin MSOP (TLC070/1/2/3)

PowerPAD is a trademark of Texas Instruments.
All other trademarks are the property of their respective owners.

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC07x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD. packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL07x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 7 nV/√Hz (an improvement of 60%). DC improvements include a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC07x as the ideal high-performance general-purpose operational amplifier family.

The first members of TI’s new BiMOS general-purpose operational amplifier family are the TLC07x. The BiMOS family concept is simple: provide an upgrade path for BiFET users who are moving away from dual-supply to single-supply systems and demand higher AC and dc performance. With performance rated from 4.5 V to 16 V across commercial (0°C to 70°C) and an extended industrial temperature range (–40°C to 125°C), BiMOS suits a wide range of audio, automotive, industrial and instrumentation applications. Familiar features like offset nulling pins, and new features like MSOP PowerPAD. packages and shutdown modes, enable higher levels of performance in a variety of applications.

Developed in TI’s patented LBC3 BiCMOS process, the new BiMOS amplifiers combine a very high input impedance low-noise CMOS front end with a high-drive bipolar output stage, thus providing the optimum performance features of both. AC performance improvements over the TL07x BiFET predecessors include a bandwidth of 10 MHz (an increase of 300%) and voltage noise of 7 nV/√Hz (an improvement of 60%). DC improvements include a factor of 4 reduction in input offset voltage down to 1.5 mV (maximum) in the standard grade, and a power supply rejection improvement of greater than 40 dB to 130 dB. Added to this list of impressive features is the ability to drive ±50-mA loads comfortably from an ultrasmall-footprint MSOP PowerPAD package, which positions the TLC07x as the ideal high-performance general-purpose operational amplifier family.

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* Data sheet Family of Wide-Bandwidth High-Output-Drive Single-Supply Operational Amplifiers datasheet (Rev. F) 05 Dec 2011

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