This reference design uses a rad-tolerant TPS7H5020-SEP pulse-width modulation (PWM) controller and rad-tolerant TPS7H6005-SEP 200V GaN half-bridge gate-driver to create a high efficiency synchronous forward topology. To have an accurate, direct sense of the output voltage and achieve a high loop bandwidth, the PWM controller is placed on the secondary side. The capacitively isolated TX and RX level shifters that are within the half-bridge gate- driver, transfer the PWM waveform from secondary to primary while maintaining electrical isolation.
Features
- Over 90% efficiency at mid and full load operation
- 200V galvanic isolation through half-bridge gate-driver
- 55mm × 45mm design size, two-layer PCB
- GaN FETs and synchronous rectification
- Plastic pin-to-pin population options for rad-tolerant or rad-hard configurations
- Rad-tolerant (TID 50krad, SEE immune to 43MeV×cm2 /mg: TPS7H5020-SEP and TPS7H6005-SEP)
- Rad-hard (TID 100krad, SEE immune to 75MeV×cm2 /mg: TPS7H5020-SP and TPS7H6005-SP)