SCES906A
February 2020 – July 2020
2N7001T-Q1
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics
6.7
Operating Characteritics: TA = 25°C
6.8
Typical Characteristics
7
Parameter Measurement Information
7.1
Load Circuit and Voltage Waveforms
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Up-Translation or Down-Translation from 1.65 V to 3.60 V
8.3.2
Balanced CMOS Push-Pull Outputs
8.3.3
Standard CMOS Inputs
8.3.4
Negative Clamping Diodes
8.3.5
Partial Power Down (Ioff)
8.3.6
Over-voltage Tolerant Inputs
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.2
Typical Applications
9.2.1
Processor Error Up Translation
9.2.1.1
Design Requirements
9.2.1.2
Detailed Design Procedure
9.2.1.3
Application Curve
9.2.2
Discrete FET Translation Replacement
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Documentation Support
12.1.1
Related Documentation
12.2
Receiving Notification of Documentation Updates
12.3
Support Resources
12.4
Trademarks
12.5
Electrostatic Discharge Caution
12.6
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
DCK|5
MPDS025J
Thermal pad, mechanical data (Package|Pins)
Orderable Information
sces906a_oa
sces906a_pm
1
Features
Up and down translation across 1.65 V to 3.6 V
AEC-Q100 automotive qualified
Operating temperature grade 1: –40°C to +125°C
Maximum quiescent current (I
CCA
+ I
CCB
) of 14 µA (125°C maximum)
Up to 100 Mbps support across the full supply range
V
CC
Isolation Feature
If either V
CC
input is below 100 mV, the output becomes high-impedance
I
off
supports partial-power-down mode operation
Latch-up performance exceeds 100 mA per JESD 78, Class II
ESD protection exceeds JEDEC JS-001
2000-V human body model
1000-V charged-device model