SLPS459A January   2014  – June 2014 CSD25310Q2

PRODUCTION DATA.  

  1. 1Features
  2. 2Applications
  3. 3Description
  4. 4Revision History
  5. 5Specifications
    1. 5.1 Electrical Characteristics
    2. 5.2 Thermal Information
    3. 5.3 Typical MOSFET Characteristics
  6. 6Device and Documentation Support
    1. 6.1 Trademarks
    2. 6.2 Electrostatic Discharge Caution
    3. 6.3 Glossary
  7. 7Mechanical, Packaging, and Orderable Information
    1. 7.1 Q2 Package Dimensions
    2. 7.2 Recommended PCB Pattern
    3. 7.3 Recommended Stencil Pattern
    4. 7.4 Q2 Tape and Reel Information

Package Options

Refer to the PDF data sheet for device specific package drawings

Mechanical Data (Package|Pins)
  • DQK|6
Thermal pad, mechanical data (Package|Pins)
Orderable Information

1 Features

  • Ultra-Low Qg and Qgd
  • Low On Resistance
  • Low Thermal Resistance
  • Pb-Free
  • RoHS Compliant
  • Halogen Free
  • SON 2-mm × 2-mm Plastic Package

2 Applications

  • Battery Management
  • Load Management
  • Battery Protection

3 Description

This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.

Top View
P0112-01_LPS234.gif

Product Summary

TA = 25°C TYPICAL VALUE UNIT
VDS Drain-to-Source Voltage –20 V
Qg Gate Charge Total (–4.5 V) 3.6 nC
Qgd Gate Charge Gate to Drain 0.5 nC
RDS(on) Drain-to-Source On Resistance VGS = –1.8 V 59.0
VGS = –2.5 V 27.0
VGS = –4.5 V 19.9
VGS(th) Threshold Voltage -0.85 V


Ordering Information(1)

Device Media Qty Package Ship
CSD25310Q2 7-Inch Reel 3000 SON 2 x 2 mm
Plastic Package
Tape and Reel
CSD25310Q2T 7-Inch Reel 250
  1. For all available packages, see the orderable addendum at the end of the data sheet.

Absolute Maximum Ratings

TA = 25°C VALUE UNIT
VDS Drain-to-Source Voltage –20 V
VGS Gate-to-Source Voltage ±8 V
ID Continuous Drain Current (Package Limit) –20 A
Continuous Drain Current(1) –9.6 A
IDM Pulsed Drain Current(2) 48 A
PD Power Dissipation(1) 2.9 W
TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C
  1. RθJA = 43°C/W on 1 in² Cu (2 oz.) on .060-inch thick FR4 PCB.
  2. Pulse duration 10 μs, duty cycle ≤2%

RDS(on) vs VGS

graph07_SLPS459.png

Gate Charge

graph04p3_SLPS459.png