CSD25310Q2
-20-V, P channel NexFET™ power MOSFET, single SON 2 mm x 2 mm, 23.9 mOhm
CSD25310Q2
- Ultra-Low Qg and Qgd
- Low On Resistance
- Low Thermal Resistance
- Pb-Free
- RoHS Compliant
- Halogen Free
- SON 2-mm × 2-mm Plastic Package
This 19.9 mΩ, –20 V P-Channel device is designed to deliver the lowest on resistance and gate charge in the smallest outline possible with excellent thermal characteristics in an ultra-low profile. Its low on resistance coupled with an extremely small footprint in a SON 2 mm × 2 mm plastic package make the device ideal for battery operated space constrained operations.
For all available packages, see the orderable addendum at the end of the data sheet.Technical documentation
Type | Title | Date | ||
---|---|---|---|---|
* | Data sheet | CSD25310Q2 20 V P-Channel NexFET Power MOSFETs datasheet (Rev. A) | PDF | HTML | 05 Jun 2014 |
Application note | MOSFET Support and Training Tools (Rev. F) | PDF | HTML | 14 Jun 2024 | |
Application note | Semiconductor and IC Package Thermal Metrics (Rev. D) | PDF | HTML | 25 Mar 2024 | |
Application note | Using MOSFET Transient Thermal Impedance Curves In Your Design | PDF | HTML | 18 Dec 2023 | |
Application note | QFN and SON PCB Attachment (Rev. C) | PDF | HTML | 06 Dec 2023 | |
Application note | Using MOSFET Safe Operating Area Curves in Your Design | PDF | HTML | 13 Mar 2023 | |
Application brief | Tips for Successfully Paralleling Power MOSFETs | PDF | HTML | 31 May 2022 | |
Technical article | What type of ESD protection does your MOSFET include? | PDF | HTML | 22 Jun 2020 | |
Application note | Ringing Reduction Techniques for NexFET High Performance MOSFETs | 16 Nov 2011 |
Design & development
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Package | Pins | CAD symbols, footprints & 3D models |
---|---|---|
WSON (DQK) | 6 | Ultra Librarian |
Ordering & quality
- RoHS
- REACH
- Device marking
- Lead finish/Ball material
- MSL rating/Peak reflow
- MTBF/FIT estimates
- Material content
- Qualification summary
- Ongoing reliability monitoring
- Fab location
- Assembly location
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