ZHCSJD8B August   2018  – January 2020 TLV1805-Q1

PRODUCTION DATA.  

1. 1 特性
2. 2 应用
3. 3 说明
   1.     Device Images
      1.      采用 N 沟道 MOSFET 的反向电流保护
      2.      采用 P 沟道 MOSFET 的反向电流和过压保护
4. 4 修订历史记录
5. 5 Pin Configuration and Functions
   1.     Pin Functions
6. 6 Specifications
   1. 6.1 Absolute Maximum Ratings
   2. 6.2 ESD Ratings
   3. 6.3 Recommended Operating Conditions
   4. 6.4 Thermal Information
   5. 6.5 Electrical Characteristics
   6. 6.6 Switching Characteristics
   7. 6.7 Typical Characteristics
7. 7 Detailed Description
   1. 7.1 Overview
   2. 7.2 Functional Block Diagram
   3. 7.3 Feature Description
      1. 7.3.1 Rail to Rail Inputs
      2. 7.3.2 Power On Reset
      3. 7.3.3 High Power Push-Pull Output
      4. 7.3.4 Shutdown Function
      5. 7.3.5 Internal Hysteresis
   4. 7.4 Device Functional Modes
      1. 7.4.1 External Hysteresis
         1. 7.4.1.1 Inverting Comparator With Hysteresis
         2. 7.4.1.2 Noninverting Comparator With Hysteresis
8. 8 Application and Implementation
   1. 8.1 Application Information
   2. 8.2 Typical Applications
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
      3. 8.2.3 Application Curve
      4. 8.2.4 Reverse Current Protection Using MOSFET and TLV1805-Q1
         1. 8.2.4.1 Minimum Reverse Current
         2. 8.2.4.2 N-Channel Reverse Current Protection Circuit
            1. 8.2.4.2.1 N-Channel Oscillator Circuit
      5. 8.2.5 P-Channel Reverse Current Protection Circuit
      6. 8.2.6 P-Channel Reverse Current Protection With Overvotlage Protection
      7. 8.2.7 ORing MOSFET Controller
9. 9 Power Supply Recommendations
10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
11. 11器件和文档支持
    1. 11.1 文档支持
       1. 11.1.1 相关文档
    2. 11.2 接收文档更新通知
    3. 11.3 支持资源
    4. 11.4 商标
    5. 11.5 静电放电警告
    6. 11.6 Glossary
12. 12机械、封装和可订购信息