SNVS412C April   2006  – September 2016 LM5109A

PRODUCTION DATA.  

  1. 1 Features
  2. 2 Applications
  3. 3 Description
  4. 4 Revision History
  5. 5 Pin Configuration and Functions
  6. 6 Specifications
    1. 6.1 Absolute Maximum Ratings
    2. 6.2 ESD Ratings
    3. 6.3 Recommended Operating Conditions
    4. 6.4 Thermal Information
    5. 6.5 Electrical Characteristics
    6. 6.6 Switching Characteristics
    7. 6.7 Typical Performance Characteristics
  7. 7 Detailed Description
    1. 7.1 Overview
    2. 7.2 Functional Block Diagram
    3. 7.3 Feature Description
      1. 7.3.1 Start-Up and UVLO
      2. 7.3.2 Level Shift
      3. 7.3.3 Output Stages
    4. 7.4 Device Functional Modes
  8. 8 Application and Implementation
    1. 8.1 Application Information
      1. 8.1.1 HS Transient Voltages Below Ground
    2. 8.2 Typical Application
      1. 8.2.1 Design Requirements
      2. 8.2.2 Detailed Design Procedure
        1. 8.2.2.1 Select Bootstrap and VDD Capacitor
        2. 8.2.2.2 Select External Bootstrap Diode and Its Series Resistor
        3. 8.2.2.3 Selecting External Gate Driver Resistor
        4. 8.2.2.4 Estimate the Driver Power Loss
      3. 8.2.3 Application Curves
  9. 9 Power Supply Recommendations
  10. 10Layout
    1. 10.1 Layout Guidelines
    2. 10.2 Layout Example
  11. 11Device and Documentation Support
    1. 11.1 Documentation Support
      1. 11.1.1 Related Documentation
    2. 11.2 Receiving Notification of Documentation Updates
    3. 11.3 Community Resource
    4. 11.4 Trademarks
    5. 11.5 Electrostatic Discharge Caution
    6. 11.6 Glossary
  12. 12Mechanical, Packaging, and Orderable Information

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机械数据 (封装 | 引脚)
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订购信息

1 Features

  • Drives Both a High-Side and Low-Side N-Channel MOSFET
  • 1A peak Output Current (1.0A Sink / 1.0A Source)
  • Independent TTL Compatible Inputs
  • Bootstrap Supply Voltage to 108V DC
  • Fast Propagation Times (30 ns Typical)
  • Drives 1000 pF Load with 15ns Rise and Fall Times
  • Excellent Propagation Delay Matching (2 ns Typical)
  • Supply Rail Under-Voltage Lockout
  • Low Power Consumption
  • Pin Compatible with ISL6700
  • Industry Standard SOIC-8 and Thermally Enhanced WSON-8 Package

2 Applications

  • Current Fed Push-Pull Converters
  • Half and Full Bridge Power Converters
  • Solid State Motor Drives
  • Two Switch Forward Power Converters

3 Description

The LM5109A is a cost effective, high voltage gate driver designed to drive both the high-side and the low-side N-Channel MOSFETs in a synchronous buck or a half bridge configuration. The floating high-side driver is capable of working with rail voltages up to 90V. The outputs are independently controlled with TTL compatible input thresholds. The robust level shift technology operates at high speed while consuming low power and providing clean level transitions from the control input logic to the high-side gate driver. Under-voltage lockout is provided on both the low-side and the high-side power rails. The device is available in the SOIC and the thermally enhanced WSON packages.

Device Information(1)

PART NUMBER PACKAGE BODY SIZE (NOM)
LM5109A SOIC (8) 4.90 mm × 3.91 mm
WSON (8) 4.00 mm × 4.00 mm
  1. For all available packages, see the orderable addendum at the end of the datasheet.

Simplified Application Diagram

LM5109A simplified_application_snvsag6.gif