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Data Sheet
LMG3612 650-V 120-mΩ GaN FET With Integrated
Driver
1 Features
- 650-V 120-mΩ GaN
power FET
- Integrated gate driver with low
propagation delays and adjustable turn-on slew-rate control
- Overtemperature protection with
FLT pin reporting
- AUX quiescent current: 55 μA
- Maximum supply and input logic pin voltage: 26 V
- 8 mm × 5.3 mm QFN package with
thermal pad