The LMG3612 is a 650-V 120-mΩ GaN power FET intended for switch-mode power-supply applications. The LMG3612 simplifies design and reduces component count by integrating the GaN FET and gate driver in a 8-mm by 5.3-mm QFN package.
Programmable turn-on slew rates provide EMI and ringing control.
The LMG3612 supports converter light-load efficiency requirements and burst-mode operation with low quiescent currents and fast start-up times. Protection features include under-voltage lockout (UVLO) and overtemperature protection. Overtemperature protection is reported with the open-drain FLT pin.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Data sheet | LMG3612650-V120-mΩ GaN FET With Integrated Driver datasheet | PDF | HTML | 14 Nov 2023 |
| Technical article | The benefits of low-power GaN in common AC/DC power topologies | PDF | HTML | 30 Jan 2024 | |
| Product overview | Designing With the LMG362x Family of Low-Power GaN FETs | PDF | HTML | 28 Nov 2023 |
For additional terms or required resources, click any title below to view the detail page where available.
LMG3622EVM-082 demonstrates high efficiency and high density for a 65-W USB Type-C® Power Delivery (PD) off-line adapter using the LMG3622 integrated GaN FET with current sense emulation. The input supports a universal 90 VAC to 265 VAC and the single output can be set to 5 V, 9 V and 15 V all at (...)
| Package | Pins | CAD symbols, footprints & 3D models |
|---|---|---|
| VQFN (REQ) | 38 | Ultra Librarian |
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The purpose of this tool is to aid in the design of the main power stage components of a Quasi-Resonant Flyback Converter (QR) with the use of LMG36XX integrated GaN FET.
Rev A