SCES637C
August 2005 – December 2022
SN74LVCH8T245
PRODUCTION DATA
1
Features
2
Applications
3
Description
4
Revision History
5
Pin Configuration and Functions
6
Specifications
6.1
Absolute Maximum Ratings
6.2
ESD Ratings
6.3
Recommended Operating Conditions
6.4
Thermal Information
6.5
Electrical Characteristics
6.6
Switching Characteristics: VCCA = 1.8 V ± 0.15 V
6.7
Switching Characteristics: VCCA = 2.5 V ± 0.2 V
6.8
Switching Characteristics: VCCA = 3.3 V ± 0.3 V
6.9
Switching Characteristics: VCCA = 5 V ± 0.5 V
6.10
Operating Characteristics
6.11
Typical Characteristics
7
Parameter Measurement Information
8
Detailed Description
8.1
Overview
8.2
Functional Block Diagram
8.3
Feature Description
8.3.1
Fully Configurable Dual-Rail Design
8.3.2
Partial-Power-Down Mode Operation
8.3.3
Active Bus Hold Circuitry
8.3.4
Balanced High-Drive CMOS Push-Pull Outputs
8.3.5
VCC Isolation
8.4
Device Functional Modes
9
Application and Implementation
9.1
Application Information
9.2
Typical Application
9.2.1
Design Requirements
9.2.2
Detailed Design Procedure
9.2.2.1
Enable Times
9.2.3
Application Curve
10
Power Supply Recommendations
11
Layout
11.1
Layout Guidelines
11.2
Layout Example
12
Device and Documentation Support
12.1
Documentation Support
12.1.1
Related Documentation
12.2
Receiving Notification of Documentation Updates
12.3
Support Resources
12.4
Trademarks
12.5
Electrostatic Discharge Caution
12.6
Glossary
13
Mechanical, Packaging, and Orderable Information
Package Options
Mechanical Data (Package|Pins)
RHL|24
MPQF163I
DGV|24
MPDS006C
PW|24
MPDS363A
DB|24
MPDS509
Thermal pad, mechanical data (Package|Pins)
Orderable Information
sces637c_oa
sces637c_pm
1
Features
Control inputs (DIR and
OE
) V
IH
and V
IL
levels are referenced to V
CCA
Bus hold on data inputs eliminates the need for external pullup and pulldown resistors
V
CC
isolation
Fully configurable dual-rail design
I
off
supports Partial-Power-Down node operation
Latch-up performance exceeds 100 mA per JESD 78, class II
ESD protection exceeds JESD 22