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TS5A23159

ACTIVE

1-Ω on-state resistance, 5-V, 2:1 (SPDT), 2-channel analog switch with powered-off protection

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Data sheet

TS5A23159

ACTIVE
Data sheet Order now

Product details

Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.7 CON (typ) (pF) 54.5 ON-state leakage current (max) (µA) 0.1 Supply current (typ) (µA) 0.01 Bandwidth (MHz) 105 Operating temperature range (°C) -40 to 85 Features Break-before-make, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
Configuration 2:1 SPDT Number of channels 2 Power supply voltage - single (V) 1.8, 2.5, 3.3, 5 Protocols Analog Ron (typ) (Ω) 0.7 CON (typ) (pF) 54.5 ON-state leakage current (max) (µA) 0.1 Supply current (typ) (µA) 0.01 Bandwidth (MHz) 105 Operating temperature range (°C) -40 to 85 Features Break-before-make, Powered-off protection Input/output continuous current (max) (mA) 200 Rating Catalog Drain supply voltage (max) (V) 5.5 Supply voltage (max) (V) 5.5
UQFN (RSE) 10 3 mm² 2 x 1.5 VSSOP (DGS) 10 14.7 mm² 3 x 4.9
  • Isolation in Power-Down Mode, VCC = 0
  • Specified Break-Before-Make Switching
  • Low ON-State Resistance (1 Ω)
  • Control Inputs are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • Supports Analog and Digital Signals
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)
  • Isolation in Power-Down Mode, VCC = 0
  • Specified Break-Before-Make Switching
  • Low ON-State Resistance (1 Ω)
  • Control Inputs are 5.5-V Tolerant
  • Low Charge Injection
  • Excellent ON-State Resistance Matching
  • Low Total Harmonic Distortion (THD)
  • Supports Analog and Digital Signals
  • 1.65-V to 5.5-V Single-Supply Operation
  • Latch-Up Performance Exceeds 100 mA
    Per JESD 78, Class II
  • ESD Performance Tested Per JESD 22
    • 2000-V Human Body Model
      (A114-B, Class II)
    • 1000-V Charged-Device Model (C101)

The TS5A23159 is a bidirectional 2-channel single-pole double-throw (SPDT) switch that is designed to operate from 1.65 V to 5.5 V. The device offers low ON-state resistance and excellent ON-state resistance matching with the break-before-make feature which prevents signal distortion during the transferring of a signal from one channel to another. The device has an excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for a wide variety of portable applications including cell phones, audio devices, and instrumentation.

The TS5A23159 is a bidirectional 2-channel single-pole double-throw (SPDT) switch that is designed to operate from 1.65 V to 5.5 V. The device offers low ON-state resistance and excellent ON-state resistance matching with the break-before-make feature which prevents signal distortion during the transferring of a signal from one channel to another. The device has an excellent total harmonic distortion (THD) performance and consumes very low power. These features make this device suitable for a wide variety of portable applications including cell phones, audio devices, and instrumentation.
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Technical documentation

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Type Title Date
* Data sheet TS5A23159 1-Ω 2-Channel SPDT Analog Switch 5-V / 3.3-V 2-Channel 2:1 Multiplexer / Demultiplexer datasheet (Rev. H) PDF | HTML 26 Feb 2015
Application note Selecting the Correct Texas Instruments Signal Switch (Rev. E) PDF | HTML 02 Jun 2022
Application note Multiplexers and Signal Switches Glossary (Rev. B) PDF | HTML 01 Dec 2021
Application brief Eliminate Power Sequencing with Powered-off Protection Signal Switches (Rev. C) PDF | HTML 06 Jan 2021
Application note Preventing Excess Power Consumption on Analog Switches 03 Jul 2008
Application note Semiconductor Packing Material Electrostatic Discharge (ESD) Protection 08 Jul 2004

Design & development

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Reference designs

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Schematic: PDF
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UQFN (RSE) 10 Ultra Librarian
VSSOP (DGS) 10 Ultra Librarian
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