This reference design is an IGBT or SiC isolated gate driver power stage driving a IGBT module with advanced protection features. The design consists of a single phase power stage from a traction inverter supporting high level of safety features. The IGBT module has integrated thermal diode for temperature monitoring and sensing FET for over current protection, providing fast and accurate protections. It includes the bias supplies and its output voltage monitoring, isolated DC bus sensing in redundant circuits, temp sensing for high side and low side drivers, PWM gate signal monitoring, fault signal injection diagnostics. The supply accepts a wide input range of 4.5V to 65V DC, and delivers up to 180mA output current. The isolated gate driver has up to ±10A drive strength and also includes an analog to PWM converter, which is utilized for temperature and voltage sensing.
A fully assembled board has been developed for testing and performance validation only, and is not available for sale.
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Reference design overview and verified performance test data
Detailed schematic diagram for design layout and components
Complete listing of design components, reference designators, and manufacturers/part numbers
Detailed overview of design layout for component placement
Files used for 3D models or 2D drawings of IC components
Design file that contains information on physical board layer of design PCB
PCB layer plot file used for generating PCB design layout
Includes TI products in the design and potential alternatives.
| Type | Title | Date | ||
|---|---|---|---|---|
| * | Design guide | SiC/IGBT Isolated Gate Driver Reference Design With Thermal Diode and Sensing | Dec. 18, 2019 |
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