LMG341xR050 600-V 50-mΩ Integrated GaN Fet Power Stage With Overcurrent Protection

1 Features

• TI GaN FET reliability qualified with in-application hard-switching accelerated stress profiles
• Enables high density power conversion designs
  • Superior system performance over cascode or stand-alone GaN FETs
  • Low inductance 8 mm x 8 mm QFN package for ease of design, and layout
  • Adjustable drive strength for switching performance and EMI control
  • Digital fault status output signal
  • Only +12 V unregulated supply needed
• Integrated gate driver
  • Zero common source inductance
  • 20 ns Propagation delay for MHz operation
  • Trimmed gate bias voltage to compensate for threshold variations ensures reliable switching
  • 25 to 100V/ns User adjustable slew rate
• Robust protection
  • Requires no external protection components
  • Overcurrent protection with less than 100 ns response
  • Greater than 150 V/ns Slew rate immunity
  • Transient overvoltage immunity
  • Overtemperature protection
  • Under voltage lock out (UVLO) Protection on all supply rails
• Robust protection
  • LMG3410R050: Latched overcurrent protection
  • LMG3411R050: Cycle-by-cycle overcurrent protection